BSS89E6325 [INFINEON]
SIPMOS Small-Signal Transistor; SIPMOS小信号晶体管
| 型号： | BSS89E6325 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal Transistor |
| 文件： | 总7页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS 89
®
SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
= 0.8...2.0V
GS(th)
Pin 1
G
Pin 2
D
Pin 3
S
Type
Package
Marking
VDS
240 V
ID
RDS(on)
Ω
BSS 89
0.3 A
6
TO-92
SS89
Type
Ordering Code
Q62702-S519
Q62702-S619
Q62702-S385
Tape and Reel Information
BSS 89
BSS 89
BSS 89
E6288
E6296
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
240
V
DS
V
DGR
R
= 20 k
Ω
240
GS
±
20
Gate source voltage
V
GS
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
Class 1
I
A
D
T = 25 ˚C
0.3
A
DC drain current, pulsed
I
Dpuls
T = 25 ˚C
1.2
A
Power dissipation
P
W
tot
T = 25 ˚C
1
A
Data Sheet
1
05.99
BSS 89
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150
-55 ... + 150
˚C
j
T
stg
1)
≤
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
125
K/W
thJA
E
55 / 150 / 56
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 ˚C
V
V
I
V
(BR)DSS
GS(th)
V
240
0.8
-
-
GS
D
j
Gate threshold voltage
I = 1 mA
V
=V
GS DS, D
1.5
2
Zero gate voltage drain current
µA
DSS
V
V
V
= 240 V, V = 0 V, T = 25 ˚C
-
0.1
10
-
1
DS
DS
DS
GS
j
= 240 V, V = 0 V, T = 125 ˚C
-
-
100
0.2
GS
j
= 60 V, V = 0 V, T = 25 ˚C
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
nA
GSS
V
-
10
100
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
V
= 10 V, I = 0.3 A
-
-
4.5
5.3
6
GS
GS
D
= 4.5 V, I = 0.3 A
10
D
Data Sheet
2
05.99
BSS 89
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
V
≥
2 I
R I = 0.3 A
0.14
0.33
115
15
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
155
25
12
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
8
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 0.28 A
ns
d(on)
V
DD
GS
D
R = 50
Ω
-
-
-
-
5
8
G
Rise time
= 30 V, V = 10 V, I = 0.28 A
t
t
t
r
V
DD
GS
D
R = 50
Ω
10
30
20
15
40
27
G
Turn-off delay time
= 30 V, V = 10 V, I = 0.28 A
d(off)
V
DD
GS
D
R = 50
Ω
G
Fall time
f
V
= 30 V, V = 10 V, I = 0.28 A
GS D
DD
R = 50
Ω
G
Data Sheet
3
05.99
BSS 89
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
I
A
S
T = 25 ˚C
-
-
-
-
0.3
1.2
1.4
A
Inverse diode direct current,pulsed
SM
T = 25 ˚C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = 0.6 A
0.9
GS
F
Data Sheet
4
05.99
BSS 89
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
10 V
GS
1.2
W
0.32
A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Ptot
ID
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.0
0
20
40
60
80 100 120
˚C
160
0
20
40
60
80 100 120
˚C
160
TA
TA
Safe operating area ID=f(VDS
)
Drain-source breakdown voltage
ƒ
parameter : D = 0.01, TC=25˚C
V
= (T )
(BR)DSS
j
285
V
275
V(BR)DSS
270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100
˚C
Tj
160
Data Sheet
5
05.99
BSS 89
Typ. output characteristics
Typ. drain-source on-resistance
ƒ(
ƒ(
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs
parameter: t = 80 µs, T = 25 ˚C
p j
p
19
0.70
P
tot = 1W
a
b
c
Ω
A
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
j
i h
k
l
g
f
16
14
12
10
8
V
[V]
GS
a
ID
RDS (on)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
7.0
8.0
9.0
10.0
b
c
d
e
f
e
g
h
i
d
d
j
e
6
k
l
f
g
h
c
a
i
j
4
V
[V] =
GS
a
b
2
0
b
c
d
e
f
g
h
i
j
0.05
0.00
3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0
2
4
6
8
V
11
0.00
0.10
0.20
0.30
0.40
A
0.60
VDS
ID
Typ. transfer characteristics
Typ. forward transconductance
g = f (I )
fs
I = f(V
)
D
GS
D
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
2 x I x R
DS D DS(on)max
V
≥
2 x I x R
V
DS
D
DS(on)max
1.2
A
0.55
S
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
ID
gfs
0.8
0.6
0.4
0.2
0.0
0.05
0.00
0
1
2
3
4
5
6
7
8
V
VGS
10
0.00
0.10
0.20
0.30
0.40
A
ID
0.55
Data Sheet
6
05.99
BSS 89
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = 0.3 A, V = 10 V
parameter: V = V , I = 1 mA
GS DS D
D
GS
15
4.6
V
Ω
13
12
11
10
9
4.0
RDS (on)
VGS(th)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
8
98%
98%
typ
7
6
typ
5
4
2%
3
2
0.4
0.0
1
0
-60
-20
20
60
100
˚C
Tj
160
-60
-20
20
60
100
˚C
Tj
160
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
ƒ
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 3
10 1
pF
A
C
IF
Ciss
10 2
10 1
10 0
10 0
10 -1
10 -2
Coss
Crss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
0
5
10
15
20
25
30
V
VDS
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
Data Sheet
7
05.99
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