BSS84PWH6327XTSA1 [INFINEON]
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3;
| 型号： | BSS84PWH6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 局域网 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS84PW
SIPMOS Small-Signal-Transistor
Features
Product Summary
P-Channel
Drain source voltage
V
-60
8
V
A
DS
Enhancement mode
Avalanche rated
Logic Level
Drain-source on-state resistance
Continuous drain current
R
DS(on)
-0.15
I
D
3
dv/dt rated
2
• Qualified according to AEC Q101
1
VSO05561
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel
Marking Pin 1
PIN 2
PIN 3
BSS84PW
PG-SOT-323 H6327:3000pcs/r. YBs
G
S
D
Maximum Ratings,at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
= 25 °C
-0.15
A
I
D
T
A
Pulsed drain current
= 25 °C
-0.6
I
D puls
T
A
Avalanche energy, single pulse
= -0.15 A , = -25 V, = 25
GS
2.61
mJ
E
E
AS
AR
I
V
R
D
DD
0.03
6
Avalanche energy, periodic limited by
Reverse diode d /d
= -0.15 A, = -48 V, di/dt = 200 A/µs,
T
jmax
v
t
dv/dt
kV/µs
I
V
S
DS
T
= 150 °C
jmax
Gate source voltage
Power dissipation
V
P
±20
0.3
V
GS
tot
W
T
= 25 °C
A
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55...+150
55/150/56
°C
T , T
j stg
ESD Class
Class 0
JESF22-A114-HBM
Rev 2.0
Page 1
2016-06-21
BSS84PW
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
-
-
110 K/W
R
thJS
SMD version, device on PCB:
@ min. footprint
R
thJA
-
-
-
-
420
350
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
-1
max.
Static Characteristics
Drain-source breakdown voltage
V
V
-
-
V
(BR)DSS
GS(th)
V
= 0 V, I = -250 µA
D
GS
Gate threshold voltage, V = V
-1.5
-2
GS
DS
I = -20 µA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-10
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 125 °C
-100
GS
j
Gate-source leakage current
= -20 V, V = 0 V
-
-
-
-
-10
10.5
6.9
-100 nA
I
GSS
V
GS
DS
Drain-source on-state resistance
= -2.7 V, I = -0.01 A
25
12
8
R
DS(on)
V
GS
D
Drain-source on-state resistance
= -4.5 V, I = -0.12 A
R
DS(on)
V
GS
D
Drain-source on-state resistance
4.6
R
DS(on)
V
= -10 V, I = -0.15 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.0
Page 2
2016-06-21
BSS84PW
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
V
2*I *R ,
DS(on)max
0.08
0.16
-
S
fs
DS
D
I =0.15A
D
Input capacitance
Output capacitance
C
C
V
=0V, V =-25V,
-
-
-
-
-
-
-
15.3
5.8
3
19.1 pF
7.3
iss
oss
rss
d(on)
r
GS
DS
f=1MHz
Reverse transfer capacitance C
3.8
Turn-on delay time
Rise time
t
t
t
t
V
=-30V, V =-4.5V,
6.7
16.2
8.6
20.5
10
ns
DD
GS
I =-0.12A, R =25
24.3
12.9
30.8
D
G
Turn-off delay time
Fall time
d(off)
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q
Q
Q
V
=-48V, I =-0.15A
D
-
-
-
0.25
0.3
1
0.38 nC
0.45
gs
gd
g
DD
Gate charge total
V
V
=-48V, I =-0.15A,
D
1.5
DD
=0 to -10V
GS
Gate plateau voltage
V
=-48V, I =-0.15A
D
-
-3.4
-
V
V(plateau)
DD
Reverse Diode
Inverse diode continuous
forward current
T =25°C
-
-
-
-
-0.15 A
-0.6
I
A
S
Inverse diode direct current,
pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
V
=0V, I =-0.15A
-
-
-
-0.84 -1.12 V
V
GS
F
SD
t
V =-30V, I =l ,
23.6
11.6
35.4 ns
17.4 nC
rr
R
F S
di /dt=100A/µs
F
Reverse recovery charge
Q
rr
Rev 2.0
Page 3
2016-06-21
BSS84PW
Power Dissipation
Drain current
I = f (T )
P
= f (T )
A
tot
D
A
parameter: V
10 V
GS
BSS84PW
BSS84PW
0.32
W
-0.16
A
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-0.12
-0.10
P
I
-0.08
-0.06
-0.04
-0.02
0.00
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
A
A
Safe operating area
I = f ( V
Transient thermal impedance
Z = f (t )
thJA
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
BSS84PW
BSS84PW
-10 1
10 3
A
K/W
-10 0
t
= 40.0µs
100 µs
p
10 2
I
I
Z
1 ms
V
-10 -1
10 ms
D = 0.50
0.20
R
10 1
0.10
0.05
-10 -2
0.02
single pulse
0.01
DC
-10 -3
10 0
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
-10 -1
-10 0
-10 1
-10 2
DS
10 3
V
s
V
t
p
Rev 2.0
Page 4
2016-06-21
BSS84PW
Typ. output characteristic
I = f (V ); T =25°C
Typ. drain-source-on-resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
BSS84PW
BSS84PW
26
-0.36
A
Ptot = 0W
a
b
c
d
f
V
[V]
g
e
GS
a
22
20
18
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
b
c
d
e
f
-0.28
-0.24
-0.20
-0.16
-0.12
-0.08
-0.04
0.00
d
16
I
R
14
12
10
8
g
c
b
6
e
f
g
4
V
[V] =
b
GS
a
c
d
e
f
g
a
2
0
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24
-0.30
V
A
V
I
DS
D
Typ. forward transconductance
Typ. transfer characteristics I = f ( V
)
GS
D
g = f(I ); T =25°C
V
2 x I x R
D DS(on)max
fs
D
j
DS
parameter: g
parameter: t = 80 µs
fs
p
-0.30
0.22
S
A
0.18
0.16
-0.20
0.14
I
g
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-0.15
-0.10
-0.05
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
GS
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
-0.40
V
A
I
V
D
Rev 2.0
Page 5
2016-06-21
BSS84PW
Drain-source on-resistance
= f(T )
Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter: I = -0.17A, V = -10 V
parameter: V = V , I = -20 µA
GS DS D
D
GS
-2.5
16
V
max.
12
10
8
max.
R
V
typ.
-1.5
-1.0
-0.5
0.0
min.
6
typ.
4
2
0
-60
-20
20
60
100
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
Typ. capacitances
Forward characteristics of reverse diode
I = f (V )
C = f(VDS)
F
SD
Parameter: V =0 V, f=1 MHz
parameter: T , tp = 80 µs
j
GS
BSS84PW
10 2
-10 0
A
pF
-10 -1
Ciss
I
C
10 1
Coss
-10 -2
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
-10 -3
0.0
0
-5
-10
-15
-20
-30
DS
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
SD
V
V
V
V
Rev 2.0
Page 6
2016-06-21
BSS84PW
Typ. gate charge
= f (Q
Avalanche energy
= f (T )
V
)
Gate
E
GS
AS
j
parameter: I = -0.15 A pulsed
par.: I = -0.15 A , V = -25 V, R = 25
D
D
DD
GS
BSS84PW
3.0
-16
V
mJ
-12
2.0
-10
E
V
V
0,2
DS max
0,8 VDS max
1.5
1.0
0.5
0.0
-8
-6
-4
-2
0
25
45
65
85
105
125
165
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.5
°C
nC
T
Q
j
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BSS84PW
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
-60
-20
20
60
100
180
°C
T
j
Rev 2.0
Page 7
2016-06-21
BSS84PW
Package Outline SOT-323
Footprint
Soldering type: Reflow soldering
Soldering type: Wave soldering
Tape and Reel
Rev 2.0
Page 8
2016-06-21
-60VꢀSIPMOSꢀSmallꢀSignalꢀTransistor
BSS84PW
RevisionꢀHistory
BSS84PW
Revision:ꢀ2016-06-27,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2016-06-27
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2016ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
9
Rev.ꢀ2.0,ꢀꢀ2016-06-27
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