BSR92P [INFINEON]
SIPMOS Small-Signal-Transistor; SIPMOS小信号三极管
| 型号： | BSR92P |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal-Transistor |
| 文件： | 总9页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSR92P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
V DS
-250
V
Ω
A
• P-Channel
R DS(on),max
I D
11
• Enhancement mode / Logic level
• Avalanche rated
-0.14
• Pb-free lead plating; RoHS compliant
• Footprint compatible to SOT23
PG-SC59
Type
Package
Tape and Reel Information
Marking
Lead free
Packing
BSR92P
PG-SC59
L6327 = 3000 pcs. / reel
LD
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
steady state
-0.14
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
A
-0.11
I D,pulse
E AS
-0.56
Pulsed drain current
24
I D=-0.14 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
V GS
±20
0.5
Gate source voltage
V
P tot
T C=25 °C
Power dissipation
W
°C
T j, T stg
-55 ... 150
1A (250V to 500V)
260 °C
Operating and storage temperature
ESD class
JESD22-A114 (HBM)
Soldering temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Rev 1.02
page 1
2009-02-16
BSR92P
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - ambient
minimal footprint,
steady state
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=-250 µA
DS=V GS
Drain-source breakdown voltage
Gate threshold voltage
-250
-2
-
-
V
,
-1.5
-1
I D=-130 µA
V
DS=-250 V, V GS=0 V,
I DSS
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
-
-0.1
-1
µA
T j=25 °C
V
DS=-250 V, V GS=0 V,
-
-
-
-10
-10
11
-100
T j=150 °C
I GSS
V
V
GS=-20 V, V DS=0 V
-100 nA
20
GS=-2.8 V,
I D=-0.025 A
V
GS=-4.5 V, I D=-
R DS(on)
-
-
9
8
13
Ω
0.13 A
V
GS=-10 V,
11
I D=-0.14 A
|V DS|>2|I D|R DS(on)max
I D=-0.11 A
,
g fs
Transconductance
0.1
0.3
-
S
Rev 1.02
page 2
2009-02-16
BSR92P
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
82
12
109 pF
V
GS=0 V, V DS=-25 V,
C oss
C rss
t d(on)
t r
16
8
f =1 MHz
5
6.4
6.3
75.0
71.0
9.0
9.0
ns
V
V
DD=-125 V,
GS=-10 V,
t d(off)
t f
Turn-off delay time
Fall time
112
163
I D=-0.14 A, R G=6 Ω
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
-0.2
-1.2
-3.6
-2.7
-0.3 nC
-1.8
Q gd
V
DD=-200 V, I D=-
0.14 A, V GS=0 to -10 V
Q g
-4.8
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
-0.14
-0.56
T C=25 °C
I S,pulse
V
GS=0 V, I F=0.14 A,
V SD
t rr
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
-0.8
66
-1.2
V
T j=25 °C
-
-
ns
nC
V R=125 V, I F=|I S|,
di F/dt =100 A/µs
Q rr
125
2) See figure 16 for gate charge parameter definition
Rev 1.02
page 3
2009-02-16
BSR92P
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); |V GS|≥10 V
0.6
0.5
0.4
0.3
0.2
0.1
0.15
0.1
0.05
0
0
0
40
80
120
160
0
40
80
120
160
T
A [°C]
T
A [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC=f(t p)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
Z
parameter: D =t p/T
100
103
limited by on-state
resistance
100 µs
1 ms
0.5
102
10 ms
0.2
10-1
10-2
10-3
0.1
100 ms
0.05
101
0.02
DC
0.01
single pulse
100
10-1
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
101
102
-V DS [V]
t p [s]
Rev 1.02
page 4
2009-02-16
BSR92P
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
0.5
0.4
0.3
0.2
0.1
0
14
4.5 V
10 V
-2.5 V
6 V
-3 V
3.5 V
12
10
8
3 V
-3.5 V
-4.5 V
-6 V
2.5 V
-10 V
2 V
6
0
0
1
2
3
4
5
0.1
0.2
0.3
0.4
V
DS [V]
-ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
0.5
0.4
0.3
0.2
0.1
0
0.4
0.3
0.2
0.1
0
25 °C
150 °C
0
1
2
3
4
0.00
0.04
0.08
0.12
0.16
-V GS [V]
-ID [A]
Rev 1.02
page 5
2009-02-16
BSR92P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-0.14 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-130 µA
2.5
30
25
20
2
min
typ
1.5
15
98%
1
max
10
10V
0.5
0
5
0
-60
-20
20
60
100
140
-60 -40 -20
0
20 40 60 80 100 120 140 160
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
1000
1
25 °C
100
0.1
Ciss
150 °C
Coss
Crss
10
1
0.01
25°C, 98%
150°C, 98%
0.001
0
0
20
40
60
80
100
0.4
0.8
-V SD [V]
1.2
1.6
-V DS [V]
Rev 1.02
page 6
2009-02-16
BSR92P
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-0.14 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
8
6
4
2
50 V
25 °C
125 V
10-1
100 °C
200 V
125 °C
10-2
100
0
0
101
102
103
1
2
3
t
AV [µs]
- Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-250 µA
300
290
280
270
260
250
240
230
220
210
200
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
T j [°C]
Rev 1.02
page 7
2009-02-16
BSR92P
Package Outline
SC-59: Outline
Footprint
Packaging
Tape
Dimensions in mm
Rev 1.02
page 8
2009-02-16
BSR92P
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 1.02
page 9
2009-02-16
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