首页 |元器件品牌

BSP295L6327HTSA1 [INFINEON]

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4;
BSP295L6327HTSA1
型号： BSP295L6327HTSA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

脉冲 光电二极管 晶体管
文件： 总8页 (文件大小：440K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Rev 2.3  
BSP295  
SIPMOS Small-Signal-Transistor  
Feature  
Product Summary  
V
60  
0.3  
1.8  
V
DS  
N-Channel  
R
DS(on)  
Enhancement mode  
dv/dt rated  
I
A
D
PG-SOT223  
Pb-free lead plating; RoHS compliant  
•
x Qualified according to AEC Q101  
4
•
Halogen­free according to IEC61249­2­21  
3
2
1
VPS05163  
Marking Packaging  
Type  
Package  
Tape and Reel Information  
H
6327: 1000 pcs/reel  
PG-SOT223  
BSP295 Non dry  
BSP295  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
1.8  
1.44  
7.2  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
Reverse diode dv/dt  
dv/dt  
6
kV/µs  
V
I =1.8A, V =40V, di/dt=200A/µs, T  
DS jmax  
S
=150°C  
Gate source voltage  
V
±20  
1B (>500V, <1000V)  
1.8  
GS  
ESD class (JESD22-A114-HBM)  
Power dissipation  
P
W
tot  
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Page 1  
2012-11-28  
Rev 2.3  
BSP295  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
15  
25  
K/W  
Thermal resistance, junction - soldering point  
SMD version, device on PCB:  
@ min. footprint  
R
R
thJS  
thJA  
-
-
80  
48  
115  
70  
2
1)  
@ 6 cm cooling area  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
60  
typ. max.  
Static Characteristics  
V
-
-
V
Drain-source breakdown voltage  
(BR)DSS  
V
=0, I =250µA  
GS  
D
0.8  
1.1  
1.8  
Gate threshold voltage, V = V  
V
GS  
DS  
GS(th)  
DSS  
I =400µA  
D
µA  
nA  
Zero gate voltage drain current  
I
I
V
V
=60V, V =0, T =25°C  
GS  
-
-
-
-
0.1  
50  
10  
DS  
j
=60V, V =0, T =150°C  
DS GS  
8
1
j
Gate-source leakage current  
GSS  
V
=20V, V =0  
GS DS  
Drain-source on-state resistance  
R
DS(on)  
V
V
=10V, I =1.8A  
-
-
0.22  
0.39  
0.3  
0.5  
GS  
D
=4.5V, I =1.8A  
GS  
D
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
2012-11-28  
Rev 2.3  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
BSP295  
j
Parameter  
Symbol  
Conditions  
Values  
typ. max.  
Unit  
min.  
Dynamic Characteristics  
Transconductance  
g
V
2*I *R ,  
DS(on)max  
0.8  
1.7  
-
S
DS  
fs  
D
I =1.44A  
D
Input capacitance  
Output capacitance  
C
V
=0, V =25V,  
GS DS  
-
-
-
-
-
-
-
295  
95  
368 pF  
118  
iss  
f=1MHz  
C
oss  
Reverse transfer capacitance C  
45  
67  
rss  
Turn-on delay time  
Rise time  
t
V
=15V, V =4.5V,  
DD GS  
5.4  
9.9  
27  
8.1 ns  
15  
d(on)  
I =1.44 A, R =15  
t
G
D
r
Turn-off delay time  
Fall time  
t
41  
d(off)  
t
19  
28  
f
Gate Charge Characteristics  
Gate to source charge  
Gate to drain charge  
Q
Q
Q
V
=24V, I =1.8A  
-
-
-
0.9  
5.6  
14  
1.1 nC  
8.4  
DD  
gs  
gd  
g
D
V
DD  
=24V, I =1.8A,  
17  
Gate charge total  
D
V
GS  
=0 to 10V  
V
=24V, I = 1.8 A  
-
-
3.1  
-
3.8  
1.8  
V
A
Gate plateau voltage  
V
DD  
D
(plateau)  
Reverse Diode  
T =25°C  
A
Inverse diode continuous  
forward current  
I
S
I
-
-
-
-
-
7.2  
1.3  
45  
Inv. diode direct current, pulsed  
SM  
V
=0, I = I  
GS  
0.84  
36  
V
Inverse diode forward voltage V  
F
S
SD  
Reverse recovery time  
t
V =25V, I =l ,  
F S  
ns  
nC  
R
rr  
di /dt=100A/µs  
Reverse recovery charge  
Q
38  
48  
F
rr  
Page 3  
2012-11-28  
Rev 2.3  
BSP295  
1 Power dissipation  
2 Drain current  
I = f (T )  
P
= f (T )  
tot  
A
D
A
parameter: V  
10 V  
GS  
BSP295  
BSP295  
1.9  
1.9  
W
A
1.6  
1.4  
1.2  
1
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
0
20  
40  
60  
80 100 120  
160  
0
20  
40  
60  
80 100 120  
160  
°C  
°C  
T
T
A
A
3 Safe operating area  
I = f ( V  
4 Transient thermal impedance  
Z = f (t )  
thJA  
)
D
DS  
p
parameter : D = 0 , T = 25 °C  
parameter : D = t /T  
A
p
10 2  
BSP295  
K/W  
10 1  
10 0  
D = 0.50  
0.20  
0.10  
0.05  
single pulse  
10 -1  
0.02  
0.01  
10 -2  
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2  
10 4  
s
t
p
Page 4  
2012-11-28  
Rev 2.3  
BSP295  
5 Typ. output characteristic  
I = f (V )  
6 Typ. drain-source on resistance  
= f (I )  
R
D
DS  
DS(on)  
D
parameter: T = 25 °C, V  
parameter: Tj = 25 °C, V  
GS  
j
GS  
1.8  
3.6  
3V  
3.4V  
5V  
6V  
7V  
2.4V  
2.8V  
A
3.8
4.2V  
4.2V  
5V  
6V  
3
10V  
1.4  
1.2  
1
7V  
10V  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
3.8V  
3.4V  
0.8  
0.6  
0.4  
0.2  
0
3V  
2.8V  
2.4V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
5
0
0.6  
1.2  
1.8  
2.4  
3.6  
V
A
I
V
DS  
D
7 Typ. transfer characteristics  
I = f ( V ); V 2 x I x R  
8 Typ. forward transconductance  
g = f(I )  
D
GS  
DS  
D
DS(on)max  
fs  
D
parameter: Tj = 25 °C  
parameter: Tj = 25 °C  
2.5  
2.5  
A
S
1.5  
1
1.5  
1
0.5  
0
0.5  
0
0
0.5  
1
1.5  
2
2.5  
3
4
0
0.6  
1.2  
1.8  
2.4  
3.6  
V
V
I
V
D
GS  
Page 5  
2012-11-28  
Rev 2.3  
BSP295  
9 Drain-source on-state resistance  
= f (T )  
10 Typ. gate threshold voltage  
V = f (T )  
GS(th)  
R
DS(on)  
j
j
parameter : I = 1.8 A, V = 10 V  
parameter: V = V ; I = 1 mA  
GS DS D  
D
GS  
BSP295  
2.2  
0.75  
V
98%  
1.8  
1.6  
1.4  
1.2  
1
0.6  
0.55  
0.5  
typ.  
2%  
0.45  
0.4  
0.35  
0.3  
98%  
0.8  
0.6  
0.4  
0.2  
0
0.25  
0.2  
typ  
0.15  
0.1  
0.05  
0
°C  
-60  
-20  
20  
60  
100  
180  
-60  
-20  
20  
60  
100  
160  
°C  
T
j
T
j
11 Typ. capacitances  
C = f (V )  
12 Forward character. of reverse diode  
I = f (V )  
DS  
F
SD  
parameter: V =0, f=1 MHz, Tj = 25 °C  
parameter: T  
GS  
j
10 3  
10 1  
BSP295  
A
Ciss  
pF  
10 0  
Coss  
10 2  
Crss  
10 -1  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
10 1  
10 -2  
V
0
5
10  
15  
20  
30  
DS  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
3
V
V
V
SD  
Page 6  
2012-11-28  
Rev 2.3  
BSP295  
13 Typ. avalanche energy  
= f (T )  
14 Typ. gate charge  
= f (Q ); parameter: V  
E
V
,
DS  
AS  
j
GS  
G
par.: I = 3.9 A, V = 25 V, R = 25  
I = 1.8 A pulsed, T = 25 °C  
D
DD  
GS  
D
j
BSP295  
60  
16  
V
mJ  
12  
10  
8
40  
30  
20  
10  
0
6
0.2 VDS max  
0.5 VDS max  
0.8 VDS max  
4
2
0
°C  
nC  
20  
40  
60  
80  
100  
120  
160  
0
4
8
12  
16  
24  
Q
T
j
G
15 Drain-source breakdown voltage  
V
= f (T )  
(BR)DSS  
j
Page 7  
2012-11-28  
Rev 2.3  
BSP295  
Page 8  
2012-11-28  

相关型号：

BSP295_07

 SIPMOS Small-Signal-Transistor
INFINEON

BSP296

 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
INFINEON

BSP296E-6327

 1A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
ROCHESTER

BSP296E-6327

 1A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
INFINEON

BSP296E6327

 暂无描述
ROCHESTER

BSP296E6327

 Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
INFINEON

BSP296L6327

 SIPMOS Small-Signal-Transistor
INFINEON

BSP296L6327HTSA1

 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP296L6433

 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP296L6433HTMA1

 Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP296NH6327

 Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON

BSP296NH6327XTSA1

 Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
INFINEON
©2020 ICPDF网 联系我们和版权申明