BSC118N10NS G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | BSC118N10NS G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总10页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC118N10NS G
OptiMOS™2 Power-Transistor
Product Summary
Features
V DS
100
11.8
71
V
• N-channel, normal level
R DS(on),max
I D
mΩ
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
PG-TDSON-8
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC118N10NS G
PG-TDSON-8
118N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
71
44
A
T C=100 °C
T A=25 °C,
R
11
thJA=45 K/W2)
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
280
155
I D=50 A, R GS=25 Ω
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
114
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
1)J-STD20 and JESD22
Rev. 1.08
page 1
2009-11-03
BSC118N10NS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
-
-
-
-
-
1.1
18
62
45
K/W
top
R thJA
minimal footprint
6 cm2 cooling area2)
Thermal resistance,
junction - ambient
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=1 mA
DS=V GS, I D=70 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
3
4
V
DS=100 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.01
10
1
µA
T j=25 °C
V
DS=100 V, V GS=0 V,
100
T j=125 °C
I GSS
V
V
GS=20 V, V DS=0 V
GS=10 V, I D=50 A
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on)
R G
10
0.8
11.8
-
mΩ
Ω
|V DS|>2|I D|R DS(on)max
I D=50 A
,
g fs
Transconductance
33
65
-
S
2
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 1.08
page 2
2009-11-03
BSC118N10NS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
2800
420
26
3700 pF
560
V
GS=0 V, V DS=50 V,
C oss
C rss
t d(on)
t r
f =1 MHz
39
21
32
32
48
12
ns
21
V
DD=50 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
t d(off)
t f
Turn-off delay time
Fall time
32
8
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
14
10
19
42
4.9
45
19
15
27
56
-
nC
Q gd
V
V
DD=50 V, I D=25 A,
Q sw
Q g
GS=0 to 10 V
Gate charge total
V plateau
Q oss
Gate plateau voltage
Output charge
V
V
DD=50 V, V GS=0 V
60
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
70
A
T C=25 °C
I S,pulse
280
V
GS=0 V, I F=50 A,
V SD
Diode forward voltage
-
0.94
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
81
-
-
ns
V R=50 V, I F=25 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
188
nC
4) See figure 16 for gate charge parameter definition
Rev. 1.08
page 3
2009-11-03
BSC118N10NS G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
120
80
60
40
20
0
80
40
0
0
40
80
120
160
0
40
80
120
160
T
C [°C]
T
C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJC=f(t p)
Z
parameter: D =t p/T
103
101
limited by on-state
resistance
100 ns
1 µs
10 µs
102
101
100
10-1
100 µs
100
0.5
1 ms
0.2
0.1
DC
0.05
10-1
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
V
DS [V]
t
p [s]
Rev. 1.08
page 4
2009-11-03
BSC118N10NS G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
160
25
10 V
20
7 V
5.5 V
120
5 V
6 V
15
10
5
6 V
7 V
80
10 V
5.5 V
40
5 V
4.5 V
0
0
0
1
2
3
4
5
0
50
100
150
V
DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120
80
120
80
40
0
40
25 °C
150 °C
0
0
2
4
6
8
0
20
40
60
80
100
120
V
GS [V]
I
D [A]
Rev. 1.08
page 5
2009-11-03
BSC118N10NS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V GS=V DS
R
DS(on)=f(T j); I D=50 A; V GS=10 V
V
parameter: I D
25
4
3.5
3
20
700 µA
70 µA
2.5
2
15
98%
typ
10
1.5
1
5
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
Coss
25 °C
100
10
102
Crss
150°C, 98%
150 °C
25°C, 98%
101
100
1
0
0
20
40
60
80
0.5
1
1.5
2
V
DS [V]
V SD [V]
Rev. 1.08
page 6
2009-11-03
BSC118N10NS G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=50 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
8
6
4
2
80 V
25 °C
50 V
20 V
100 °C
10
125 °C
1
1
0
0
10
100
1000
10
20
Q
30
gate [nC]
40
50
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
110
V GS
Q g
105
100
95
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
90
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.08
page 7
2009-11-03
BSC118N10NS G
Package Outline: PG-TDSON-8
Rev. 1.08
page 8
2009-11-03
BSC118N10NS G
Dimensions in mm
Rev. 1.08
page 9
2009-11-03
BSC118N10NS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.08
page 10
2009-11-03
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