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BSC036NE7NS3 G [INFINEON]

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具有极低的导通电阻和出色的开关性能。;
BSC036NE7NS3 G
型号： BSC036NE7NS3 G
厂家： Infineon    Infineon
描述：

75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具有极低的导通电阻和出色的开关性能。

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BSC036NE7NS3ꢀG  
MOSFET  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
SuperSO8  
5
8
6
7
7
Features  
6
5
8
•ꢀOptimizedꢀtechnologyꢀforꢀsynchronousꢀrectification  
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀDC/DCꢀconverters  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀ100%ꢀavalancheꢀtested  
4
3
1
2
2
3
1
4
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
S 1  
8 D  
7 D  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
S 2  
S 3  
G 4  
Parameter  
Value  
Unit  
6 D  
5 D  
VDS  
75  
V
RDS(on),max  
ID  
3.6  
mΩ  
A
159  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC036NE7NS3 G  
PG-TDSON-8  
036NE7NS  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
159  
101  
20  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
Pulsed drain current3)  
ID,pulse  
EAS  
-
-
-
-
636  
260  
20  
A
TC=25ꢀ°C  
Avalanche energy, single pulse  
Gate source voltage  
-
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
VGS  
-20  
-
-
-
-
-
156  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
-
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
RthJA  
-
-
-
-
-
0.8  
K/W  
K/W  
K/W  
K/W  
-
-
-
-
Thermal resistance, junction - case,  
top  
-
-
-
18  
62  
50  
Device on PCB,  
minimal footprint  
Device on PCB,  
6 cm2 cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
75  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.3  
3.1  
3.8  
VDS=VGS,ꢀID=110ꢀµA  
-
-
0.1  
10  
1
100  
VDS=75ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=75ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
2.9  
2.7  
100  
3.6  
mΩ VGS=10ꢀV,ꢀID=50ꢀA  
-
-
-
Ω
-
Transconductance  
gfs  
50  
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
4400  
990  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
-
-
-
pF  
pF  
pF  
VGS=0ꢀV,ꢀVDS=37.5ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=37.5ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=37.5ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
Reverse transfer capacitance  
48  
VDD=37.5ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
14  
18  
38  
10  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=37.5ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG=1.6ꢀΩ  
VDD=37.5ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=37.5ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,  
RG=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
22.1  
12.6  
21.0  
63.4  
5.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Switching charge  
Gate charge total  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=37.5ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=37.5ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=37.5ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=37.5ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=37.5ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=37.5ꢀV,ꢀVGS=0ꢀV  
Qgd  
Qsw  
Qg  
Vplateau  
Qoss  
65  
-
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
130  
636  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.9  
44  
64  
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C  
VR=37.5ꢀV,ꢀIF=25A,ꢀdiF/dt=100ꢀA/µs  
VR=37.5ꢀV,ꢀIF=25A,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
-
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
175  
175  
150  
125  
100  
75  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
20  
40  
60  
80  
100  
120  
140  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
10 µs  
0.5  
0.2  
100 µs  
102  
101  
100  
10-1  
1 ms  
10 ms  
10-1  
0.1  
DC  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
400  
12  
360  
320  
280  
240  
200  
160  
120  
80  
7 V  
10 V  
10  
5 V  
8
6 V  
5.5 V  
6
4
2
0
7 V  
6 V  
10 V  
5.5 V  
40  
5 V  
4.5 V  
0
0
1
2
3
0
100  
200  
300  
400  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
200  
200  
160  
120  
80  
160  
120  
80  
40  
0
40  
150 °C  
25 °C  
0
0
2
4
6
8
0
40  
80  
120  
160  
200  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
8
4
1100 µA  
6
3
2
1
0
110 µA  
max  
4
typ  
2
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
150 °C  
Ciss  
150 °C, max  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
15  
30  
45  
60  
75  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
40 V  
60 V  
10  
8
20 V  
25 °C  
100 °C  
125 °C  
101  
6
4
2
100  
0
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
70  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
90  
85  
80  
75  
70  
65  
60  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2020-07-29  
OptiMOSTM3ꢀPower-Transistor,ꢀ75ꢀV  
BSC036NE7NS3ꢀG  
RevisionꢀHistory  
BSC036NE7NS3 G  
Revision:ꢀ2020-07-29,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Update current rating  
2.1  
2020-07-29  
Trademarks  
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Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2020-07-29  

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