BSC026N08NS5 [INFINEON]
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.;
| 型号： | BSC026N08NS5 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. |
| 文件： | 总11页 (文件大小：1280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC026N08NS5
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
PG-TDSON-8
8
5
7
6
Features
6
7
5
4
8
•ꢀOptimizedꢀforꢀSynchronousꢀRectificationꢀinꢀserverꢀandꢀdesktop
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
Pin 1
•ꢀN-channel
2
3
3
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
4
1
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 5-8
Parameter
Value
Unit
VDS
80
V
*1
Gate
Pin 4
RDS(on),max
ID
2.6
184
88
mΩ
A
Source
Pin 1-3
*1: Internal body diode
Qoss
nC
nC
QG(0V..10V)
74
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC026N08NS5
PG-TDSON-8
026N08NS
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
184
116
23
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJAꢀ=50K/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
736
370
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
156
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.5
0.8
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
80
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2.2
3
3.8
VDS=VGS,ꢀID=115ꢀµA
-
-
0.1
10
1
100
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.2
3.0
2.6
3.9
VGS=10ꢀV,ꢀID=50ꢀA
VGS=6ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.9
2.9
-
Ω
-
Transconductance
60
120
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
5200 6800 pF
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz
840
38
1100 pF
66
-
pF
ns
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
18
14
47
16
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
-
-
-
ns
ns
ns
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
24
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
14
-
16
23
-
Qsw
25
Gate charge total1)
Qg
74
92
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
4.5
64
-
nC
nC
88
117
VDD=40ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
118
736
1.1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.85
56
92
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=40ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
VR=40ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
112
184
ns
nC
Qrr
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
180
200
160
140
120
100
80
175
150
125
100
75
60
50
40
25
20
0
0
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
0.5
0.2
1 µs
10 µs
102
101
100
10-1
10-1
0.1
100 µs
0.05
1 ms
10 ms
0.02
0.01
DC
single pulse
10-2
10-3
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
6
10 V 7 V
5 V
5.5 V
6 V
360
5
4
3
2
1
0
6 V
320
280
240
5.5 V
200
160
120
80
7 V
10 V
5 V
40
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
350
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
160
360
320
280
240
200
160
120
80
120
80
40
0
40
150 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
5
5
4
4
max
1150 µA
3
3
2
1
0
115 µA
typ
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
9
8
7
6
25 °C
40 V
100 °C
16 V
64 V
101
5
4
3
2
1
0
125 °C
100
100
101
102
103
0
10
20
30
40
50
60
70
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
86
84
82
80
78
76
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U08
MILLIMETERS
DIMENSIONS
MIN.
0.90
0.34
0.15
4.80
3.90
0.00
5.70
4.05
MAX.
1.20
0.54
0.35
5.35
4.40
0.22
6.10
4.25
A
b
c
D
D1
D2
E
E1
e
1.27
L
0.45
0.45
0.65
0.65
L1
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2022-09-23
OptiMOSTM5ꢀPower-Transistor,ꢀ80ꢀV
BSC026N08NS5
RevisionꢀHistory
BSC026N08NS5
Revision:ꢀ2022-09-23,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
Release of final version
Rev. 2.0
2014-12-18
2015-08-31
2021-07-20
2022-09-23
Update current rating
Update outline drawing and footnotes
Trademarks
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informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2022-09-23
相关型号：
BSC027N04LS G
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
BSC027N04LSGATMA1
Power Field-Effect Transistor, 24A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC027N06LS5ATMA1
Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
INFINEON
BSC027N10NS5
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
INFINEON
BSC028N03LSCG
Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC028N03LSCGATMA1
Power Field-Effect Transistor, 24A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC028N03MSCG
Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC028N03MSCGATMA1
Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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