BSC016N06NST [INFINEON]
采用 SuperSO8 封装的 OptiMOS™ 5 功率 MOSFET 彰显出先进的技术，封装的工作温度也随之改善。新型组合提高了功率密度以及坚固性。;
| 型号： | BSC016N06NST |
| 厂家： | 
Infineon |
| 描述： | 采用 SuperSO8 封装的 OptiMOS™ 5 功率 MOSFET 彰显出先进的技术，封装的工作温度也随之改善。新型组合提高了功率密度以及坚固性。 |
| 文件： | 总13页 (文件大小：1314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC016N06NST
MOSFET
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
TDSON-8ꢀFLꢀ(enlargedꢀsourceꢀinterconnection)
8
7
6
5
Features
•ꢀOptimizedꢀforꢀsynchronousꢀrectification
•ꢀ175ꢀ°Cꢀrated
•ꢀ100%ꢀavalancheꢀtested
1
5
2
6
7
3
4
8
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀdueꢀtoꢀenlargedꢀsourceꢀinterconnection
4
3
2
1
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
VDS
60
V
RDS(on),max
ID
1.6
234
81
mΩ
A
QOSS
nC
nC
QG(0V..10V)
71
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC016N06NST
PG-TDSON-8 FL
016N06NT
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
234
164
31
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
936
380
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
167
3.0
TC=25ꢀ°C
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W
Power dissipation
Ptot
W
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.5
0.9
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=95ꢀµA
2.1
2.8
3.3
-
-
0.5
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
1.4
1.9
1.6
2.4
VGS=10ꢀV,ꢀID=50ꢀA
VGS=6ꢀV,ꢀID=12.5ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.9
2.9
-
Ω
-
70
140
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
3900 5200 6500 pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
900
14
1200 1500 pF
Reverse transfer capacitance
48
19
96
38
pF
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
9
18
70
18
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
35
9
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
16
Max.
30
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
10
14
19
8.8
14
13
20
Qsw
21
30
Gate charge total
Qg
58
71
95
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Vplateau
Qg(sync)
Qoss
3.7
49
4.3
62
4.9
86
nC
nC
60
81
102
VDD=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition. Defined by design, not subject to production test
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
167
936
1.2
Diode continuous forward current
Diode pulse current
IS
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
-
A
TC=25ꢀ°C
Diode forward voltage
-
0.9
61
78
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
VR=30ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
24
39
98
ns
nC
Qrr
156
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
180
240
160
140
120
100
80
200
160
120
80
60
40
40
20
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
101
100
10-1
100
100 µs
0.5
1 ms
10 ms
0.2
DC
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
10-3
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
5 V
10 V
3.0
350
6 V
8 V
300
250
200
150
100
50
5.5 V
2.5
5.5 V
6 V
2.0
8 V
5 V
1.5
10 V
1.0
0
0.5
0
1
2
0
50
100
150
200
250
300
350
400
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
200
320
240
160
80
160
120
80
40
0
175 °C
25 °C
0
0
1
2
3
4
5
6
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
3.5
4.0
3.5
3.0
3.0
2.5
950 µA
2.5
2.0
1.5
1.0
0.5
0.0
max
2.0
95 µA
typ
1.5
1.0
0.5
0.0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
Ciss
25 °C, max
175 °C
175 °C, max
Coss
103
102
101
102
101
100
Crss
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
30 V
48 V
10
8
12 V
25 °C
100 °C
150 °C
101
6
4
2
100
0
100
101
102
103
0
20
40
60
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
68
66
64
62
60
58
56
54
52
50
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B000193699
REVISION
03
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.26
4.80
3.70
0.02
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.42
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.69
0.45
0.90
0.69
ISSUE DATE
19.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTMꢀPower-MOSFET,ꢀ60ꢀV
BSC016N06NST
PG-TDSON-8FL: Recommended Boardpads & Apertures
Figure 2 Outline Boardpads (TDSON-8 FL)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2020-08-13
OptiMOSTM Power-MOSFET , 60 V
BSC016N06NST
Figure 3 Outline Tape (TDSON-8 FL )
Final Data Sheet
12
Rev. 2.2, 2020-08-13
OptiMOSTM Power-MOSFET , 60 V
BSC016N06NST
Revision History
BSC016N06NST
Revision: 2020-08-13, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
Update package drawings
Update current rating
2017-03-01
2019-10-22
2020-08-13
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.2, 2020-08-13
相关型号：
BSC016N06NSTATMA1
Power Field-Effect Transistor, 30A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8FL, 8 PIN
INFINEON
BSC017N04NSGATMA1
Power Field-Effect Transistor, 400A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
INFINEON
BSC018N04LSGATMA1
Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC018NE2LSATMA1
Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC018NE2LSI
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC018NE2LSIATMA1
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC019N04LS
Power Field-Effect Transistor, 27A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明