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BSC014N06NST [INFINEON]

采用 SuperSO8 封装的 OptiMOS™ 5 功率 MOSFET 彰显出先进的技术，封装的工作温度也随之改善。新型组合提高了功率密度以及坚固性。;
BSC014N06NST
型号： BSC014N06NST
厂家： Infineon    Infineon
描述：

采用 SuperSO8 封装的 OptiMOS™ 5 功率 MOSFET 彰显出先进的技术，封装的工作温度也随之改善。新型组合提高了功率密度以及坚固性。
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BSC014N06NST  
MOSFET  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
PG-TDSON-8  
8
7
5
6
Features  
6
7
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.  
•ꢀ175ꢀ°Cꢀrated  
•ꢀ100%ꢀavalancheꢀtested  
Pin 1  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
4
3
2
2
3
4
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀdueꢀtoꢀenlargedꢀsourceꢀinterconnection  
1
Drain  
Pin 5-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
*1  
Gate  
Pin 4  
VDS  
60  
V
Source  
Pin 1-3  
RDS(on),max  
ID  
1.45  
257  
100  
89  
mΩ  
A
*1: Internal body diode  
QOSS  
nC  
nC  
QG(0V..10V)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
014N06NT  
RelatedꢀLinks  
BSC014N06NST  
PG-TDSON-8 FL  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
257  
182  
31  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25°C,RthJAꢀ=50K/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
1028  
580  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
188  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
0.5  
0.8  
K/W  
K/W  
K/W  
-
-
-
Thermal resistance, junction - case,  
top  
-
-
-
-
20  
50  
Device on PCB,  
6 cm2 cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
60  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.1  
2.8  
3.3  
VDS=VGS,ꢀID=120ꢀµA  
-
-
0.5  
10  
1
100  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.2  
1.6  
1.45  
2.2  
VGS=10ꢀV,ꢀID=50ꢀA  
VGS=6ꢀV,ꢀID=12.5ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
2
3
-
Ω
-
75  
150  
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
6500 8125 pF  
1500 1875 pF  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz  
59  
23  
118  
-
pF  
ns  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=2ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=2ꢀΩ  
10  
43  
11  
-
-
-
ns  
ns  
ns  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=2ꢀΩ  
Turn-off delay time  
Fall time  
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=2ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
28  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=30ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
18  
-
16  
21  
Qsw  
26  
-
Gate charge total1)  
Qg  
89  
104  
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge1)  
Vplateau  
Qg(sync)  
Qoss  
4.3  
78  
-
-
nC  
nC  
100  
125  
VDD=30ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
156  
1028  
1.2  
83  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
Reverse recovery time1)  
0.84  
52  
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C  
VR=30ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=30ꢀV,ꢀIF=50ꢀA,ꢀdiF/dt=100ꢀA/µs  
ns  
nC  
Reverse recovery charge  
Qrr  
139  
-
1) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
200  
280  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
60  
40  
40  
20  
0
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
100  
0.5  
0.2  
103  
102  
101  
100  
10-1  
10-2  
1 µs  
10 µs  
100 µs  
10-1  
0.1  
1 ms  
10 ms  
DC  
0.05  
0.02  
0.01  
10-2  
single pulse  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
1200  
4.0  
5 V  
10 V  
5.5 V  
3.5  
7 V  
1000  
800  
600  
400  
200  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6 V  
6 V  
7 V  
10 V  
5.5 V  
5 V  
0
1
2
3
4
5
0
100  
200  
300  
400  
500  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
1200  
250  
1000  
800  
600  
400  
200  
0
200  
150  
100  
50  
25 °C  
175 °C  
0
0
1
2
3
4
5
6
7
0
20  
40  
60  
80  
100  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Diagramꢀ9:ꢀDrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
3.0  
3.5  
3.0  
2.5  
2.0  
1200 µA  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
120 µA  
max  
1.5  
typ  
1.0  
0.5  
0.0  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
Ciss  
175 °C, max  
103  
102  
101  
Coss  
102  
Crss  
101  
0.00  
0
20  
40  
60  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
30 V  
10  
8
12 V  
48 V  
25 °C  
100 °C  
150 °C  
101  
6
4
2
100  
0
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
65  
64  
63  
62  
61  
60  
59  
58  
57  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TDSON-8-U04  
MILLIMETERS  
DIMENSIONS  
MIN.  
0.90  
0
MAX.  
1.20  
0.05  
0.54  
0.35  
5.35  
4.40  
3.25  
5.38  
6.10  
3.76  
0.89  
A
A1  
b
0.26  
0.15  
4.80  
3.70  
2.94  
5.05  
5.70  
3.43  
0.69  
c
D
D1  
D2  
D3  
E
E1  
E2  
e
1.27  
L
0.45  
0.69  
0.10  
0.66  
0.90  
0.25  
L1  
aaa  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(TDSON-8ꢀFLꢀ)  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8ꢀFL)  
Final Data Sheet  
12  
Rev.ꢀ2.2,ꢀꢀ2022-08-09  
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV  
BSC014N06NST  
RevisionꢀHistory  
BSC014N06NST  
Revision:ꢀ2022-08-09,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2.2  
Release of final version  
2017-03-01  
2020-06-17  
2022-08-09  
Update current rating  
Update outline drawing and footnotes  
Trademarks  
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81726ꢀMünchen,ꢀGermany  
©ꢀ2022ꢀInfineonꢀTechnologiesꢀAG  
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LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
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Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
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Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.2,ꢀꢀ2022-08-09  

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