BGS18GA14 [INFINEON]
BGS18GA14 是一款单极八掷（SP8T）分集模块，针对高达 3.8 GHz 的无线应用进行了优化。作为引脚和功能兼容的 SP3T-SP8T 产品系列的一部分，其设计为满足芯片组参考设计的要求。该模块采用微型 ATSLP 封装，包括一个具有集成 GPIO 接口的高功率 CMOS SP8T 开关。这个射频开关是基于 LTE-和 WCDMA 的多模手机理想解决方案。;
| 型号： | BGS18GA14 |
| 厂家： | 
Infineon |
| 描述： | BGS18GA14 是一款单极八掷（SP8T）分集模块，针对高达 3.8 GHz 的无线应用进行了优化。作为引脚和功能兼容的 SP3T-SP8T 产品系列的一部分，其设计为满足芯片组参考设计的要求。该模块采用微型 ATSLP 封装，包括一个具有集成 GPIO 接口的高功率 CMOS SP8T 开关。这个射频开关是基于 LTE-和 WCDMA 的多模手机理想解决方案。 手机 开关 LTE 无线 CD 射频 射频开关 |
| 文件： | 总13页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS18GA14
SP8T Diversity Antenna Switch with GPIO Interface
Data Sheet
Revision 3.0 - 2016-02-29
Edition 2016-02-29
Published by Infineon Technologies AG
81726 Munich, Germany
c
ꢀ2016 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used
in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the
safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
BGS18GA14
Revision History
Document No.: BGS18GA14__v3.0.pdf
Revision History: Rev. v3.0
Previous Version: 2.0
Page
Subjects (major changes since last revision)
12
Carrier tape drawing updated
Trademarks of Infineon Technologies AG
µHVICTM , µIPMTM , µPFCTM , AU-ConvertIRTM , AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM , CoolDPTM , CoolGaNTM
,
,
,
,
,
,
COOLiRTM , CoolMOSTM , CoolSETTM , CoolSiCTM , DAVETM , DI-POLTM , DirectFETTM , DrBladeTM , EasyPIMTM , EconoBRIDGETM
EconoDUALTM
HybridPACKTM
,
,
EconoPACKTM
iMOTIONTM
,
EconoPIMTM
,
EiceDRIVERTM
IsoPACKTM
,
eupecTM
,
,
FCOSTM
,
GaNpowIRTM
MIPAQTM
,
,
HEXFETTM
,
HITFETTM
my-dTM
,
IRAMTM ISOFACETM
,
,
LEDrivIRTM
,
LITIXTM
,
ModSTACKTM
,
NovalithICTM , OPTIGATM , OptiMOSTM , ORIGATM , PowIRaudioTM , PowIRStageTM , PrimePACKTM , PrimeSTACKTM , PROFETTM
PRO-SILTM , RASICTM , REAL3TM , SmartLEWISTM , SOLID FLASHTM , SPOCTM , StrongIRFETTM , SupIRBuckTM , TEMPFETTM
TRENCHSTOPTM , TriCoreTM , UHVICTM , XHPTM , XMCTM
.
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Trademarks updated November 2015
Data Sheet
3
Revision 3.0 - 2016-02-29
BGS18GA14
Contents
Contents
1
2
3
4
5
6
7
Features
5
5
6
7
8
9
9
Product Description
Maximum Ratings
Operation Ranges
RF Characteristics
GPIO Specification
Package related information
List of Figures
1
BGS18GA14 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
2
3
4
5
6
Footprint, top view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Land Pattern Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Laser marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Carrier Tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
List of Tables
1
2
3
4
5
6
7
8
9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
6
7
7
7
8
9
9
9
9
Maximum Ratings, Table I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings, Table II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Input Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IMD2 Testcases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IMD3 Testcases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GPIO Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11 Pin definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data Sheet
4
Revision 3.0 - 2016-02-29
BGS18GA14
BGS18GA14
1 Features
• 8 high-linearity, interchangeable RX ports
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• Suitable for Edge / C2K / LTE / WCDMA Applications
• 0.1 to 3.8 GHz coverage
• No decoupling capacitors required if no DC applied on RF lines
• On chip control logic including ESD protection
• General Purpose Input-Output (GPIO) Interface
• Small form factor 2.0 mm x 2.0 mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
2 Product Description
The BGS18GA14 is a Single Pole Eight Throw (SP8T) Diversity Switch Module optimized for wireless applications
up to 3.8 GHz. As part of a pin- and functional-compatible SP3T-SP8T product family it has been designed to meet
the requirements of chipset reference designs. The module comes in a miniature ATSLP package and comprises of
a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode
handsets based on LTE and WCDMA. The switch device configuration is shown in Fig. 1.
The switch is controlled via a GPIO interface. It features DC-free RF ports and unlike GaAs technology, external DC
blocking capacitors at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type
Package
Marking
BGS18GA14
ATSLP-14
G8
Data Sheet
5
Revision 3.0 - 2016-02-29
BGS18GA14
ꢀꢁꢒ
ꢀꢁꢓ
ꢀꢁꢖ
ꢀꢁꢂ
ꢗꢔꢆ
ꢀꢁꢘ
ꢀꢁꢙ
ꢀꢁꢚ
ꢀꢁꢅ
ꢃꢄꢅꢆ
ꢑꢒ
ꢑꢓ
ꢑꢖ
ꢑꢕꢕ
ꢇꢔꢕ
ꢇꢄꢈꢉ
ꢈꢊꢋꢌꢍꢎꢏꢐꢌ
Figure 1: BGS18GA14 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.1
-0.5
-55
–
Typ.
–
Max.
–
1)
Frequency Range
f
GHz
V
◦C
◦C
Supply voltage
Vdd
TSTG
Tj
–
3.6
150
125
32
–
–
–
Storage temperature range
Junction temperature
RF input power at all Rx ports
ESD capability, CDM 2)
ESD capability, HBM 3)
–
–
PRF_Rx
–
–
dBm CW
VESD
−500
−1
−1
−8
–
+500
+1
V
All pins
Digital, digital versus RF
CDM
VESD
–
kV
V
HBM
–
+1
RF
ESD capability, system level 4)
VESD
–
+8
kV
ANT versus system GND,
with 27 nH shunt inductor
ANT
1) There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0V.
2) Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3) Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R = 1.5 kΩ, C = 100 pF).
4) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Data Sheet
6
Revision 3.0 - 2016-02-29
BGS18GA14
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Typ.
60
Unit
K/W
V
Note / Test Condition
Min.
Max.
Thermal resistance junction - solder- RthJS
ing point
–
–
–
Maximum DC-voltage on RF-Ports VRFDC
and RF-Ground
0
–
–
0
No DC voltages allowed on
RF-Ports
–
GPIO control voltage levels
VCtrlx
-0.7
Vdd +0.7
V
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
2.4
–
Typ.
3.0
75
–
Max.
3.4
Supply voltage
Vdd
V
–
–
–
–
–
Supply current
Idd
175
Vdd
0.45
2
µA
V
GPIO control voltage high
GPIO control voltage low
VCtrl_H
VCtrl_L
1.35
0
–
V
GPIO control input capaci- CCtrl
–
–
pF
tance
Ambient temperature
TA
-30
25
85
◦C
–
Table 5: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Rx ports (50 Ω)
PRF_Rx
–
28
dBm
–
Data Sheet
7
Revision 3.0 - 2016-02-29
BGS18GA14
5 RF Characteristics
Table 6: RF Characteristics at TA = −30 ◦C...85 ◦C, PIN = 0 dBm, Supply Voltage Vdd = 2.4 V...3.4 V, unless
otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss1)
–
–
–
–
–
–
0.27
0.42
0.48
0.56
0.69
0.74
0.35
0.56
0.58
0.62
0.75
0.80
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
All Rx Ports
Return Loss1)
All Rx Ports
Isolation1)
IL
20
14
13
12
11
10
24
19
17
15
12
11
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
RL
32
26
24
22
19
19
50
41
39
37
33
32
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
All Rx Ports
ISO
Harmonic Generation (UMTS Band 1, Band 5)1)
2nd harmonic generation
3rd harmonic generation
PH2
92
105
96
–
–
dBc
dBc
25 dBm, 50 Ω, CW mode
25 dBm, 50 Ω, CW mode
PH3
88
Intermodulation Distortion (UMTS Band 1, Band 5)1)
2nd order intermodulation
3rd order intermodulation
2nd order intermodulation
Switching Time
IMD2 low
IMD3
–
–
–
-105
-110
-115
-100
-105
-110
dBm IMT, US Cell (see Tab. 7)
dBm IMT, US Cell (see Tab. 8)
dBm IMT, US Cell (see Tab. 7)
IMD2 high
RF Rise Time
tRT
–
–
2
µs
10 % to 90 % RF signal
50 % Ctrl signal to 90 % RF
signal
Switching Time
tST
–
–
2
4
µs
µs
Power Up Settling Time
1)On application board without any matching components.
tPup
10
25
After power down mode
Data Sheet
8
Revision 3.0 - 2016-02-29
BGS18GA14
Table 7: IMD2 Testcases
Band
CW tone 1 (MHz)
CW tone 1 (dBm)
CW tone 2 (MHz)
190 (IMD2 low)
4090 (IMD2 high)
45 (IMD2 low)
CW tone 2 (dBm)
IMT
1950
835
20
-15
-15
US Cell
20
1715 (IMD2 high)
Table 8: IMD3 Testcases
Band
IMT
CW tone 1 (MHz)
CW tone 1 (dBm)
CW tone 2 (MHz)
CW tone 2 (dBm)
1950
835
20
20
1760
790
-15
-15
US Cell
6 GPIO Specification
Table 9: Modes of Operation (Truth Table)
Control Inputs
V2
State
Mode
V1
0
V3
0
1
2
3
4
5
6
7
8
RX1-ANT
RX2-ANT
RX3-ANT
RX4-ANT
RX5-ANT
RX6-ANT
RX7-ANT
RX8-ANT
0
0
1
1
0
0
1
1
0
1
0
0
0
1
1
0
1
1
1
0
1
1
7 Package related information
The switch has a package size of 2000 µm in x-dimension and 2000 µm in y-dimension with a maximum deviation
of ±50 µm in each dimension. Fig. 2 shows the footprint from top view. The definition of each pin can be found in
Tab. 11. In addition a recommendation for the land pattern is displayed in Fig. 4 followed by information regarding
laser marking (see Fig. 5).
Table 10: Mechanical Data
Parameter
Symbol
Value
Unit
µm
µm
µm
Package X-Dimension
Package Y-Dimension
Package Height
X
Y
H
2000 ± 50
2000 ± 50
0.65 max
Data Sheet
9
Revision 3.0 - 2016-02-29
BGS18GA14
RX7
ANT
RX8
14
13
12
RX6
RX4
1
2
11
10
RX5
RX3
Top View
RX2
NC
3
4
9
8
RX1
VDD
5
6
7
V3
V2
V1
Figure 2: Footprint, top view
Table 11: Pin Definition
No.
0
Name
GND
RX5
RX3
RX1
VDD
V3
Pin Type
Function
GND
RF ground; die pad
RX port 5
1
I/O
2
I/O
RX port 3
3
I/O
RX port 1
4
PWR
VDD supply
5
I
I
I
GPIO control pin
GPIO control pin
GPIO control pin
Not connected
RX port 2
6
V2
7
V1
8
NC
9
RX2
RX4
RX6
RX8
ANT
RX7
I/O
I/O
I/O
I/O
I/O
I/O
10
11
12
13
14
RX port 4
RX port 6
RX port 8
Antenna port
RX port 7
Data Sheet
10
Revision 3.0 - 2016-02-29
BGS18GA14
Top view
Bottom view
0.1 B
0.05
0.6
0.05
1
0.1 A
0.05
0.05
0.02 MAX.
0.2
8x
2
0.1 A
A
STANDOFF
8
9
10
11
7
6
12
13
14
5
4
3
2
1
B
Pin 1 marking
0.45
0.05
0.18
6x
3 x 0.45 = 1.35
1.69
Figure 3: Package Outline Drawing
14x 0.25
14x 0.25
0.45
0.45
0.85
1
0.845
0.225
0.845
0.225
Stencil apertures
Copper
Solder mask
Figure 4: Land Pattern Drawing
Data Sheet
11
Revision 3.0 - 2016-02-29
BGS18GA14
Type code
12
Date code
(YW)
Pin 1 marking
Figure 5: Laser marking
ꢆ
ꢃꢁꢄꢅ
ꢇꢈꢉꢊꢋ
ꢌꢍꢎꢏꢈꢉꢐꢊ
ꢀꢁꢀ
Figure 6: Carrier Tape
Data Sheet
12
Revision 3.0 - 2016-02-29
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
相关型号：
BGSA11GN10
BGSA11GN10 是双单刀单掷（SPST）射频天线调谐开关，针对高达 5.0 Ghz 的低 Ronenabling 应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。由于其极高的 RF 电压耐用性，其适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。
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