BGA7M1N6E6327XTSA1 [INFINEON]

Infineon’s New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates;
BGA7M1N6E6327XTSA1
元器件型号: BGA7M1N6E6327XTSA1
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

Infineon’s New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates

LTE
PDF文件: 总2页 (文件大小:220K)
下载文档:  下载PDF数据表文档文件
型号参数:BGA7M1N6E6327XTSA1参数

BGA915N7

Silicon Germanium GPS Low Noise Amplifier

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32 INFINEON

BGAV1A10E6327XTSA1

Telecom Circuit,

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0 INFINEON

BGB100

0 dBm TrueBlue radio module

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105 PHILIPS

BGB101

0 dBm Bluetooth radio module

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40 PHILIPS

BGB101

0 dBm Bluetooth radio module

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41 PHILIPS

BGB110

Bluetooth radio module

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61 PHILIPS

BGB201

Bluetooth System-in-a-Package radio with baseband controller

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63 PHILIPS

BGB203

Bluetooth System-in-a-Package radio with baseband controller

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72 PHILIPS

BGB420

Active Biased Transistor

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137 INFINEON

BGB540

Active Biased RF Transistor

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44 INFINEON

BGB540

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

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30 INFINEON

BGB540LNA

BGB540 as a 1.85 GHz Low Noise Amplifier

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30 INFINEON

BGB540MIRRORBIASEDBFP540

950 ... 2150MHz LNB Front End & IF Path solution

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29 INFINEON

BGB550

?Biased RF-Trans. in SIEGET45 Technology Icmax = 300mA. SCT595 ?

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23 ETC

BGB707L7ESD

C Wideband MMIC LNA with Integrated ESD Protection

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228 INFINEON