BCR196WH6327XTSA1 [INFINEON]

Small Signal Bipolar Transistor,;
BCR196WH6327XTSA1
型号: BCR196WH6327XTSA1
厂家: Infineon    Infineon
描述:

Small Signal Bipolar Transistor,

文件: 总8页 (文件大小:837K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCR196...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R = 47k, R = 22k)  
1
2
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR196  
BCR196W  
C
3
R1  
R2  
1
2
B
E
EHA07183  
Type  
BCR196  
BCR196W  
Marking  
WXs  
WXs  
Pin Configuration  
Package  
SOT23  
SOT323  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
50  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input reverse voltage  
Collector current  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
80  
10  
70  
mA  
I
C
mW  
Total power dissipation-  
P
tot  
BCR196, T 102°C  
200  
250  
S
BCR196W, T 124°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
150 ... -65  
stg  
2011-08-30  
1
BCR196...  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
BCR196  
BCR196W  
240  
105  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
50  
-
-
-
V
V
V
(BR)CEO  
I = 100 µA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
50  
-
-
-
-
-
(BR)CBO  
C
E
Collector-base cutoff current  
= 40 V, I = 0  
I
100 nA  
220 µA  
CBO  
V
CB  
E
-
Emitter-base cutoff current  
I
EBO  
V
= 10 V, I = 0  
EB  
C
2)  
50  
-
-
DC current gain  
h
FE  
I = 5 mA, V = 5 V  
C
CE  
2)  
Collector-emitter saturation voltage  
I = 10 mA, I = 0,5 mA  
V
-
-
-
-
0.3  
2.6  
4
V
CEsat  
i(off)  
C
B
Input off voltage  
I = 100 µA, V = 5 V  
V
V
1.2  
1.5  
C
CE  
Input on voltage  
I = 2 mA, V = 0,3 V  
i(on)  
C
CE  
Input resistor  
Resistor ratio  
R
R /R  
32  
1.92  
47  
2.14  
62  
2.36  
kΩ  
-
1
1
2
AC Characteristics  
Transition frequency  
-
-
150  
3
-
-
MHz  
pF  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
C
cb  
V
= 10 V, f = 1 MHz  
CB  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2Pulse test: t < 300µs; D < 2%  
2011-08-30  
2
BCR196...  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5 V (common emitter configuration)  
V
= ƒ(I ), I /I = 20  
CE  
CEsat C C B  
10 3  
0.5  
V
0.4  
0.35  
0.3  
10 2  
-40 °C  
-25 °C  
25 °C  
85 °C  
125 °C  
0.25  
0.2  
10 1  
-40 °C  
0.15  
0.1  
-25 °C  
25 °C  
85 °C  
125 °C  
0.05  
0
10 0  
10 -4  
10 -3  
10 -2  
10 -1  
10 -3  
10 -2  
10 -1  
A
A
I
I
C
C
Input on Voltage Vi  
= ƒ(I )  
Input off voltage V  
= ƒ(I )  
i(off) C  
(on)  
C
V
= 0.3V (common emitter configuration)  
V
= 5V (common emitter configuration)  
CE  
CE  
10 2  
V
10 2  
V
-40 °C  
-25 °C  
-40 °C  
-25 °C  
25 °C  
85 °C  
125 °C  
10 1  
10 1  
25 °C  
85 °C  
125 °C  
10 0  
10 0  
10 -1  
10 -1  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
A
A
I
I
C
C
2011-08-30  
3
BCR196...  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR196  
BCR196W  
300  
mW  
300  
mW  
250  
225  
200  
175  
150  
125  
100  
75  
250  
225  
200  
175  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
°C  
°C  
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
Permissible Pulse Load R  
BCR196  
= ƒ(t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR196  
10 3  
K/W  
10 3  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2011-08-30  
4
BCR196...  
Permissible Puls Load R  
BCR196W  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR196W  
10 3  
K/W  
10 3  
-
10 2  
10 1  
10 0  
10 -1  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2011-08-30  
5
Package SOT23  
BCR196...  
Package Outline  
0.1  
1
0.1 MAX.  
0.1  
2.9  
B
3
1
2
1)  
+0.1  
0.4  
A
-0.05  
0.08...0.15  
0...8˚  
C
0.95  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2011-08-30  
6
Package SOT323  
BCR196...  
Package Outline  
0.1  
0.9  
0.2  
2
0.1 MAX.  
0.1  
+0.1  
3x  
0.3  
-0.05  
M
0.1  
A
3
1
2
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.6  
0.65  
0.65  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
BCR108W  
Type code  
Pin 1  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
Pin 1  
2.15  
1.1  
2011-08-30  
7
BCR196...  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-08-30  
8

相关型号:

BCR196_07

PNP Silicon Digital Transistor
INFINEON

BCR198

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON

BCR198B6327HTSA1

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON

BCR198E6327

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BCR198E6393

Small Signal Bipolar Transistor,
INFINEON

BCR198E6433

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BCR198E6433HTMA1

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BCR198F

PNP Silicon Digital Transistor
INFINEON

BCR198L3

PNP Silicon Digital Transistor
INFINEON

BCR198L3E6327

Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, PNP, Silicon
INFINEON

BCR198S

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON

BCR198S-E6327

Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
INFINEON