BCR192U [INFINEON]
PNP Silicon Digital Transistor Array; PNP硅数字晶体管阵列
| 型号： | BCR192U |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Digital Transistor Array |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR192U
PNP Silicon Digital Transistor Array
Preliminary data
Switching circuit, inverter, interface circuit,
driver circuit
4
5
6
Two ( galvanic) internal isolated Transistors
with good matching in one package
3
2
Built in bias resistor (R =22k , R =47k )
1
2
1
VPW09197
C1
6
B2
5
E2
4
R2
R1
TR2
TR1
R1
R2
1
2
3
E1
B1
C2
EHA07173
Type
BCR192U
Marking
WPs
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
Package
SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
Symbol
Value
50
50
10
30
Unit
V
V
V
V
V
CEO
CBO
EBO
i(on)
DC collector current
100
250
150
mA
mW
°C
I
C
Total power dissipation, T = 118 °C
Junction temperature
P
S
tot
T
j
Storage temperature
-65 ... 150
T
stg
Thermal Resistance
Junction - soldering point
1)
R
130
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Dec-13-2001
BCR192U
Electrical Characteristics at T =25°C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
50
50
-
max.
DC Characteristics
Collector-emitter breakdown voltage
-
-
-
-
-
-
-
-
-
V
V
V
(BR)CEO
(BR)CBO
I = 100 µA, I = 0
C
B
-
Collector-base breakdown voltage
I = 10 µA, I = 0
C
E
Collector cutoff current
100 nA
227 µA
I
CBO
V
= 40 V, I = 0
CB
E
Emitter cutoff current
= 10 V, I = 0
-
I
EBO
V
EB
C
DC current gain 1)
70
-
-
-
h
FE
I = 5 mA, V = 5 V
C
CE
Collector-emitter saturation voltage1)
0.3
1.2
2.5
29
V
V
CEsat
i(off)
I = 10 mA, I = 0.5 mA
C
B
Input off voltage
0.5
0.8
V
V
I = 100 µA, V = 5 V
C
CE
Input on Voltage
i(on)
I = 2 mA, V = 0.3 V
C
CE
Input resistor
15
22
R
k
1
Resistor ratio
0.42
0.47
0.52 -
R /R
1
2
AC Characteristics
Transition frequency
-
-
200
3
-
-
MHz
pF
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1) Pulse test: t < 300 s; D < 2%
2
Dec-13-2001
BCR192U
Collector-Emitter Saturation Voltage
DC Current Gain h = f (I )
FE
C
V
= f (I ), h = 20
C FE
V
= 5V (common emitter configuration)
CEsat
CE
10 2
10 3
-
mA
10 2
10 1
10 1
10 0
10 0
10 -1
10 0
10 1
10 2
0.0
0.2
0.4
0.6
1.0
mA
V
I
V
CEsat
C
Input on Voltage V
= f (I )
Input off voltage V
= f (I )
i(on)
C
i(off) C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 1
10 2
mA
mA
10 0
10 1
10 -1
10 -2
10 -3
10 0
10 -1
10 -1
10 0
10 1
10 2
0.0
0.5
1.0
1.5
2.5
i(off)
V
V
V
V
i(on)
3
Dec-13-2001
BCR192U
Total power dissipation P = f (T )
tot
S
300
mW
200
150
100
50
0
°C
0
20
40
60
80
100 120
150
T
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.2
0.5
10 1
10 0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
4
Dec-13-2001
相关型号：
BCR192W
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON
BCR192WH6327XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
BCR196
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
INFINEON
BCR196-E6327
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BCR196-E6433
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BCR196E6327HTSA1
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明