BCR148_09 [INFINEON]

NPN Silicon Digital Transistor; NPN硅晶体管数字
BCR148_09
型号: BCR148_09
厂家: Infineon    Infineon
描述:

NPN Silicon Digital Transistor
NPN硅晶体管数字

晶体 晶体管
文件: 总12页 (文件大小:881K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCR148...  
NPN Silicon Digital Transistor  
Switching circuit, inverter, interface circuit  
driver circuit  
Built in bias resistor (R =47 k, R =47 k)  
1
2
BCR148S: Two internally isolated  
transistors with good matching  
in one multichip package  
BCR148S: For orientation in reel see  
package information below  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BCR148/F  
BCR148W  
BCR148S  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07174  
EHA07184  
Type  
BCR148  
BCR148F  
BCR148S  
BCR148W  
Marking  
Pin Configuration  
Package  
SOT23  
TSFP-3  
WEs  
WEs  
WEs  
WEs  
1=B 2=E 3=C  
1=B 2=E 3=C  
-
-
-
-
-
-
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=B 2=E 3=C  
-
-
-
SOT323  
1Pb-containing package may be available upon special request  
2009-06-16  
1
BCR148...  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
50  
Unit  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
Input reverse voltage  
Collector current  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
80  
10  
100  
mA  
I
C
mW  
Total power dissipation-  
P
tot  
BCR148, T 102°C  
200  
250  
250  
250  
S
BCR148F, T 128°C  
S
BCR148S, T 115°C  
S
BCR148W, T 124°C  
S
150  
-65 ... 150  
°C  
Junction temperature  
Storage temperature  
T
j
T
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
BCR148  
240  
90  
140  
105  
BCR148F  
BCR148S  
BCR148W  
1For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2009-06-16  
2
BCR148...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
50  
-
-
-
-
-
-
-
-
-
-
V
V
V
(BR)CEO  
(BR)CBO  
CBO  
I = 100 µA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
50  
-
C
E
Collector-base cutoff current  
= 40 V, I = 0  
I
I
100 nA  
164 µA  
V
CB  
E
-
Emitter-base cutoff current  
EBO  
V
= 10 V, I = 0  
EB  
C
1)  
70  
-
-
-
DC current gain  
h
FE  
I = 5 mA, V = 5 V  
Collector-emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
C
CE  
1)  
V
V
V
0.3  
1.5  
3
V
CEsat  
i(off)  
C
B
Input off voltage  
I = 100 µA, V = 5 V  
0.8  
1
C
CE  
Input on voltage  
I = 2 mA, V = 0.3 V  
i(on)  
C
CE  
Input resistor  
Resistor ratio  
R
R /R  
32  
0.9  
47  
1
62  
1.1  
kΩ  
-
1
1
2
AC Characteristics  
Transition frequency  
-
-
100  
3
-
-
MHz  
pF  
f
T
I = 10 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
cb  
V
CB  
1Pulse test: t < 300µs; D < 2%  
2009-06-16  
3
BCR148...  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5V (common emitter configuration)  
V
= ƒ(I ), I /I = 20  
CE  
CEsat C C B  
10 3  
0.5  
V
0.4  
0.35  
0.3  
10 2  
0.25  
0.2  
-40 °C  
-25 °C  
25 °C  
85 °C  
125 °C  
10 1  
-40 °C  
0.15  
0.1  
-25 °C  
25 °C  
85 °C  
125 °C  
0.05  
0
10 0  
10 -4  
10 -3  
10 -2  
10 -1  
10 -3  
10 -2  
10 -1  
A
A
I
I
C
C
Input on Voltage Vi  
= ƒ(I )  
Input off voltage V  
= ƒ(I )  
i(off) C  
(on)  
C
V
= 0.3V (common emitter configuration)  
V
= 5V (common emitter configuration)  
CE  
CE  
10 1  
10 2  
V
-40 °C  
-25 °C  
V
25 °C  
-40 °C  
-25 °C  
85 °C  
10 1  
125 °C  
25 °C  
85 °C  
125 °C  
10 0  
10 0  
10 -1  
10 -1  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
A
A
I
I
C
C
2009-06-16  
4
BCR148...  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR148  
BCR148F  
300  
mW  
300  
mW  
250  
225  
200  
175  
150  
125  
100  
75  
250  
225  
200  
175  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
0
°C  
°C  
15 30 45 60 75 90 105 120  
150  
15 30 45 60 75 90 105 120  
150  
T
T
S
S
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BCR148S  
BCR148W  
300  
mW  
300  
mW  
250  
225  
200  
175  
150  
125  
100  
75  
250  
225  
200  
175  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
°C  
°C  
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
2009-06-16  
5
BCR148...  
Permissible Pulse Load R  
BCR148  
= ƒ(t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR148  
10 3  
K/W  
10 3  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BCR148F  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR148F  
10 2  
K/W  
10 3  
D=0.5  
0.2  
10 1  
10 0  
10 -1  
10 2  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.1  
0.05  
0.02  
0.01  
0.005  
0
0.2  
0.5  
10 1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2009-06-16  
6
BCR148...  
Permissible Puls Load R  
BCR148S  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR148S  
10 3  
K/W  
10 3  
-
10 2  
10 1  
10 0  
10 -1  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BCR148W  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BCR148W  
10 3  
K/W  
10 3  
-
10 2  
10 1  
10 0  
10 -1  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2009-06-16  
7
Package SOT23  
BCR148...  
Package Outline  
0.1  
1
0.1 MAX.  
0.1  
2.9  
B
3
1
2
1)  
+0.1  
0.4  
A
-0.05  
0.08...0.15  
0...8˚  
C
0.95  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2009-06-16  
8
Package SOT323  
BCR148...  
Package Outline  
0.1  
0.9  
0.2  
2
0.1 MAX.  
0.1  
+0.1  
3x  
0.3  
-0.05  
M
0.1  
A
3
1
2
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.6  
0.65  
0.65  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
BCR108W  
Type code  
Pin 1  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
Pin 1  
2.15  
1.1  
2009-06-16  
9
Package SOT363  
BCR148...  
Package Outline  
0.2  
2
0.1  
0.9  
+0.1  
-0.05  
6x  
0.2  
0.1 MAX.  
0.1  
M
0.1  
A
6
1
5
4
3
2
Pin 1  
marking  
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.3  
0.65  
0.65  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCR108S  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
1.1  
2.15  
Pin 1  
marking  
2009-06-16  
10  
Package TSFP-3  
BCR148...  
Package Outline  
0.05  
1.2  
0.05  
0.04  
0.2  
0.55  
3
1
2
0.05  
0.05  
0.05  
0.2  
0.15  
0.4  
0.05  
0.4  
Foot Print  
0.4  
0.4  
0.4  
Marking Layout (Example)  
Manufacturer  
BCR847BF  
Type code  
Pin 1  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.3  
0.7  
1.35  
Pin 1  
2009-06-16  
11  
BCR148...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2009-06-16  
12  

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