BCR114F-E6433 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon;
| 型号： | BCR114F-E6433 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR114...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R =4.7kΩ, R =10kΩ)
1
2
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR114F
C
3
R1
R2
1
2
B
E
EHA07184
Type
Marking
U4s
Pin Configuration
1=B 2=E 3=C -
Package
BCR114F
-
-
TSFP-3
Maximum Ratings
Parameter
Symbol
Value
50
Unit
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
V
V
V
V
CEO
CBO
i(fwd)
i(rev)
50
30
5
100
250
mA
I
C
mW
Total power dissipation-
P
tot
BCR114F, T ≤ 128°C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point , BCR114F
R
≤ 90
thJS
1
Pb-containing package may be available upon special request
2
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-09-17
1
BCR114...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
50
-
-
-
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
I = 100 µA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
50
-
-
-
-
-
(BR)CBO
C
E
Collector-base cutoff current
= 40 V, I = 0
I
100 nA
520 µA
CBO
V
CB
E
-
Emitter-base cutoff current
I
EBO
V
= 5 V, I = 0
EB
C
1)
30
-
-
DC current gain
h
FE
I = 5 mA, V = 5 V
C
CE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
-
-
-
-
0.3
1.1
1.4
V
CEsat
C
B
Input off voltage
I = 100 µA, V = 5 V
V
V
0.5
0.5
i(off)
C
CE
Input on voltage
I = 2 mA, V = 0.3 V
i(on)
C
CE
Input resistor
Resistor ratio
R
3.2
4.7
6.2 kΩ
1
R /R
0.42
0.47
0.52
-
1
2
AC Characteristics
-
-
160
3
-
-
MHz
pF
Transition frequency
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2007-09-17
2
BCR114...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V (common emitter configuration)
V
= ƒ(I ), h = 20
CE
CEsat C FE
10 -1
10 3
A
10 2
10 -2
10 1
10 0
10 -4
10 -3
10 -3
10 -2
10 -1
0
0.1
0.2
0.3
0.5
A
V
I
V
CEsat
C
Input on Voltage Vi
= ƒ(I )
Input off voltage V
= ƒ(I )
i(off) C
(on)
C
V
= 0.3V (common emitter configuration)
V
= 5V (common emitter configuration)
CE
CE
10 -2
10 -1
A
A
10 -3
10 -4
10 -5
10 -6
10 -2
10 -3
10 -4
10 -1
10 0
10 1
10 2
i(on)
0
0.5
1
2
V
V
V
V
i(off)
2007-09-17
3
BCR114...
Total power dissipation P = ƒ(T )
Permissible Puls Load R
= ƒ (t )
tot
S
thJS
p
BCR114F
BCR114F
10 2
K/W
300
mW
250
225
200
175
150
125
100
75
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -1
50
25
0
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
15 30 45 60 75 90 105 120
150
T
t
p
S
Permissible Pulse Load
/P = ƒ(t )
P
totmax totDC
p
BCR114F
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
t
p
2007-09-17
4
Package TSFP-3
BCR114...
Package Outline
±0.05
1.2
±0.05
±0.04
0.55
0.2
3
1
2
±0.05
±0.05
0.2
0.15
±0.05
0.4
±0.05
0.4
Foot Print
0.4
0.4
0.4
Marking Layout (Example)
Manufacturer
BCR847BF
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.3
0.7
1.35
Pin 1
2007-09-17
5
BCR114...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-09-17
6
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