BCP53 [INFINEON]
PNP Silicon AF Transistors (For AF driver and output stages High collector current); PNP硅晶体管自动对焦（ AF对于驱动和输出级高集电极电流）
| 型号： | BCP53 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors (For AF driver and output stages High collector current) |
| 文件： | 总5页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BCP 51
... BCP 53
● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BCP 54 … BCP 56 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
BCP 51
BCP 51
Q62702-C2107
B
C
E
C
SOT-223
BCP 51-10
BCP 51-16
BCP 52
BCP 51-10 Q62702-C2109
BCP 51-16 Q62702-C2110
BCP 52
Q62702-C2146
BCP 52-10
BCP 52-16
BCP 53
BCP 52-10 Q62702-C2112
BCP 52-16 Q62702-C2113
BCP 53
Q62702-C2147
BCP 53-10
BCP 53-16
BCP 53-10 Q62702-C2115
BCP 53-16 Q62702-C2116
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BCP 51
... BCP 53
Maximum Ratings
Parameter
Symbol
Values
BCP 51 BCP 52 BCP 53 Unit
Collector-emitter voltage
V
V
CE0
CER
45
45
60
60
80
100
V
RBE ≤ 1 kΩ
Collector-base voltage
Emitter-base voltage
Collector current
V
CB0
EB0
45
60
100
V
5
I
I
I
I
C
1
A
Peak collector current
Base current
CM
1.5
100
200
1.5
150
B
mA
Peak base current
Total power dissipation, T
Junction temperature
BM
S
= 124 ˚C1)
Ptot
W
Tj
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 72
≤ 17
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BCP 51
... BCP 53
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 10 mA, I
B
= 0
BCP 51
BCP 52
BCP 53
45
60
80
–
–
–
–
–
–
Collector-base breakdown voltage
= 100 µA, I = 0
IC
B
BCP 51
BCP 52
BCP 53
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
= 10 µA, I = 0
5
–
–
IE
C
Collector-base cutoff current
I
CB0
EB0
V
V
CB = 30 V, I
CB = 30 V, I
E
= 0
= 0, T
–
–
–
–
100
20
nA
µA
E
A
= 150 ˚C
Emitter-base cutoff current
= 0
I
–
–
10
µA
V
EB = 5 V, I
C
DC current gain1)
h
FE
–
25
–
–
IC
= 5 mA, VCE = 2 V
IC
= 150 mA, VCE = 2 V
40
63
100
25
–
250
160
250
–
BCP 51/BCP 52/BCP 53
BCP 51/BCP 52/BCP 53-10
BCP 51/BCP 52/BCP 53-16
100
160
–
IC
= 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
= 500 mA, I = 50 mA
V
CEsat
BE
–
–
0.5
V
IC
B
Base-emitter voltage1)
= 500 mA, VCE = 2 V
V
–
–
1
IC
AC characteristics
Transition frequency
fT
–
125
–
MHz
IC
= 50 mA, VCE = 10 V, f = 100 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BCP 51
... BCP 53
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 10 V
DC current gain hFE = f (I
C
)
Collector cutoff current ICB0 = f (T )
A
V
CE = 2 V
VCB = 30 V
Semiconductor Group
4
BCP 51
... BCP 53
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 10
hFE = 10
Permissible pulse load Ptot max/Ptot DC = f (t )
p
Semiconductor Group
5
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