BC859 [INFINEON]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | BC859 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总8页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856...BC860
PNP Silicon AF Transistors
For AF input stages and driver applications
High current gain
3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC846, BC847, BC848
BC849, BC850 (NPN)
2
1
VPS05161
Type
Marking
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
Pin Configuration
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
BC856A
BC856B
BC857A
BC857B
BC857C
BC858A
BC858B
BC858C
BC859A
BC859B
BC859C
BC860B
BC860C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
4Gs
1
Dec-11-2001
BC856...BC860
Maximum Ratings
Parameter
Symbol
Unit
BC856
BC857
BC860
45
50
50
5
100
BC858
BC859
30
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
65
80
80
5
V
V
V
V
V
CEO
CBO
CES
EBO
30
30
5
mA
mA
I
C
200
200
I
CM
I
BM
Peak emitter current
200
I
EM
330
150
mW
°C
Total power dissipation, T = 71 °C
Junction temperature
P
tot
S
T
j
Storage temperature
-65 ... 150
T
stg
Thermal Resistance
Junction - soldering point
1)
R
240
K/W
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0
65
45
30
-
-
-
-
-
-
BC856
BC857/860
BC858/859
C
B
Collector-base breakdown voltage
80
50
30
-
-
-
-
-
-
I = 10 µA, I = 0
BC856
BC857/860
BC858/859
C
E
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
Dec-11-2001
BC856...BC860
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CES
I = 10 µA, V = 0
80
50
30
-
-
-
-
-
-
BC856
BC857/860
BC858/859
C
BE
Emitter-base breakdown voltage
5
-
-
-
-
15
5
V
(BR)EBO
I = 1 µA, I = 0
E
C
Collector cutoff current
= 30 V, I = 0
-
nA
µA
-
I
CBO
V
CB
E
Collector cutoff current
-
I
CBO
V
= 30 V, I = 0 , T = 150 °C
CB
E
A
DC current gain 1)
I = 10 µA, V = 5 V
h
FE
h -group A
-
-
-
140
250
480
-
-
-
C
CE
FE
h -group B
FE
h -group C
FE
DC current gain 1)
I = 2 mA, V = 5 V
h
FE
h -group A
125
220
420
180
290
520
250
475
800
C
CE
FE
h -group B
FE
h -group C
FE
Collector-emitter saturation voltage1)
mV
V
CEsat
I = 10 mA, I = 0.5 mA
-
-
75
250
300
650
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter saturation voltage 1)
V
V
BEsat
I = 10 mA, I = 0.5 mA
-
-
700
850
-
-
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter voltage 1)
BE(ON)
I = 2 mA, V = 5 V
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1) Pulse test: t ≤=300µs, D = 2%
3
Dec-11-2001
BC856...BC860
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
Transition frequency
-
-
-
250
3
-
-
-
MHz
pF
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
C
cb
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
8
C
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
k
11e
h -gr.A
-
-
-
2.7
4.5
8.7
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
-4
Open-circuit reverse voltage transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
10
h
12e
h -gr.A
-
-
-
1.5
2
3
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
Short-circuit forward current transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
-
h
21e
h -gr.A
-
-
-
200
330
600
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
Open-circuit output admittance
h
S
22e
I = 2 mA, V = 5 V, f = 1 kHz
h -gr.A
-
-
-
18
30
60
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
-
1
4
dB
Noise figure
F
V
BC 859
BC 860
I = 0.2 mA, V = 5 V, R = 2 k ,
C
CE
S
f = 1 kHz, f = 200 Hz
Equivalent noise voltage
-
-
0.11 µV
n
I = 200 µA, V = 5 V, R = 2 k ,
BC 860
C
CE
S
f = 10 ... 50 Hz
4
Dec-11-2001
BC856...BC860
Total power dissipation P = f(T )
Collector-base capacitance C = f (V
CBO
tot
S
CB
Emitter-base capacitance C = f (V
)
EB
EBO
EHP00376
12 BC 856...860
pF
360
mW
CCB0
CEB0
(
)
300
270
240
210
180
150
120
90
10
8
CEBO
6
4
CCBO
2
60
30
0
0
0
15 30 45 60 75 90 105 120
150
10 -1
5
10 0
V
101
°C
S
T
(
)
VCB0 VEB0
Permissible pulse load
Transition frequency f = f (I )
T
C
P
/ P
= f (t )
V
= 5V
totmax
totDC
p
CE
EHP00378
103
EHP00377
103
Ptotmax
PtotDC
MHz
5
t p
5
t p
T
f T
D
=
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
102
5
0.2
0.5
101
5
100
101
10-6 10-5 10-4 10-3 10-2
s
100
10-1
5
10 0
5
101
10 2
mA
t p
Ι C
5
Dec-11-2001
BC856...BC860
Collector-emitter saturation voltage
Collector cutoff current I
= f (T )
A
CBO
I = f (V
), h = 20
V
= 30V
C
CEsat
FE
CB
EHP00380
EHP00381
10 2
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100 C
25 C
-50 C
101
5
max
10 2
5
typ
101
5
100
5
100
5
10 -1
10 -1
0
0
50
100
150
C
0.1
0.2
0.3
0.4
V
0.5
TA
VCEsat
Base-emitter saturation voltage
DC current gain h = f (I )
FE
C
I = f (V
), h = 20
V
= 5V
C
BEsat
FE
CE
EHP00379
EHP00382
102
103
mA
5
100 C
25 C
Ι C
h FE
100
25
-50
C
C
C
-50
C
101
5
102
5
101
5
100
5
100
10-1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.2
0.4
0.6
0.8
V
1.2
mA
Ι C
VBEsat
6
Dec-11-2001
BC856...BC860
h parameter h = f (V ) normalized
h parameter h = f (I ) normalized
e
CE
e
C
I = 2mA
V
= 5V
C
CE
BC 856...860
EHP00383
BC 856...860
EHP00384
10 2
2.0
1.5
1.0
0.5
0
5
he
he
Ι C = 2 mA
h11
V
CE = 5 V
h11e
10 1
5
h12
h12e
10 0
5
h22
h21e
h 22e
10-1
0
10
20
V
30
10-1
5
10 0
101
mA
VCE
Ι C
Noise figure F = f (V )
Noise figure F = f (f)
I = 0.2mA, V = 5V, R = 2k
CE
I = 0.2mA, R = 2k , f = 1kHz
C
S
C
CE
S
BC 856...860
EHP00385
BC 856...860
EHP00386
20
dB
20
dB
F
F
15
10
5
15
10
5
0
0
10-1
5
10 0
5
101
V
102
10-2
10 -1
100
101 kHz 10 2
VCE
f
7
Dec-11-2001
BC856...BC860
Noise figure F = f (I )
Noise figure F = f (I )
C
C
V
= 5V, f = 120Hz
V
= 5V, f = 1kHz
CE
CE
BC 856...860
EHP00388
BC 856...860
EHP00387
20
20
dB
dB
F
F
15
15
100 k
10 k
Ω
Ω
RS = 1 M
Ω
RS = 1 M
Ω
100 k
Ω
10 k
Ω
10
10
500
Ω
1 k
Ω
5
0
5
0
1 k
Ω
Ω
500
10-3
10-2
10-1
100
101
mA
10-3
10-2
10-1
100
101
mA
Ι C
Ι C
Noise figure F = f (I )
C
V
= 5V, f = 10kHz
CE
BC 856...860
EHP00389
20
dB
F
15
RS = 1 M
Ω
100 k
10 k
Ω
Ω
10
500
Ω
5
0
1 k
Ω
10-3
10-2
10-1
100
101
mA
Ι C
8
Dec-11-2001
相关型号：
BC859-A
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
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