BC859CW [INFINEON]
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage); PNP硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益低集电极 - 发射极饱和电压）
| 型号： | BC859CW |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BC 856W ... BC 860W
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303
B
E
C
SOT-323
1)For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856W ... BC 860W
Maximum Ratings
Description
Symbol
Unit
BC 856W BC 857W BC 858W
BC 860W BC 859W
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CBO
CES
EBO
65
80
80
5
45
30
30
30
5
V
50
V
50
V
5
100
V
I
C
mA
mA
mW
˚C
˚C
Collector peak current
Total power dissipation, T
Junction temperature
I
CM
200
Ptot
250
S
=115 ˚C
Tj
150
Storage temperature range
Tstg
–65 to 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 240
≤ 105
K/W
K/W
Junction - soldering point
R
Semiconductor Group
2
BC 856W ... BC 860W
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)CES
V(BR)EB0
V
IC
= 10 mA
BC 856W
65
45
30
–
–
–
–
–
–
BC 857W, BC 860W
BC 858W, BC 859W
Collector-base breakdown voltage
IC
= 10 µA
BC 856W
80
50
30
–
–
–
–
–
–
BC 857W, BC 860W
BC 858W, BC 859W
Collector-emitter breakdown voltage
IC
= 10 µA, VBE = 0
BC 856W
80
50
30
–
–
–
–
–
–
BC 857W, BC 860W
BC 858W, BC 859W
Emitter-base breakdown voltage
= 1 µA
5
–
–
IE
Collector cutoff current
ICB0
V
CB = 30 V
–
–
–
–
15
5
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
DC current gain
h
FE
–
IC
= 10 µA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
–
–
–
140
250
480
–
–
–
IC
= 2 mA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
125
220
420
180
290
520
250
475
800
Collector-emitter saturation voltage1)
VCEsat
VBEsat
VBE(on)
mV
–
–
75
250
300
650
I
C
= 10 mA, I
= 100 mA, I
B
= 0.5 mA
= 5 mA
IC
B
Base-emitter saturation voltage1)
–
–
700
850
–
–
I
C
= 10 mA, I
= 100 mA, I
B
= 0.5 mA
= 5 mA
IC
B
Base-emitter voltage
I
C
= 2 mA, VCE = 5 V
= 10 mA, VCE = 5 V
600
–
650
–
750
820
IC
1)Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BC 856W ... BC 860W
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
–
250
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
CB = 0.5 V, f = 1 MHz
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
C
obo
ibo
V
C
10
V
h
h
h
h
11e
12e
21e
22e
kΩ
IC
–
–
–
2.7
4.5
8.7
–
–
–
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
10– 4
Open-circuit reverse voltage transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
IC
–
–
–
1.5
2.0
3.0
–
–
–
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
Short-circuit forward current transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
–
IC
–
–
–
200
330
600
–
–
–
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
Open-circuit output admittance
= 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
µS
dB
IC
–
–
–
18
30
60
–
–
–
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
Noise figure
= 0.2 mA, VCE = 5 V, R
F
V
IC
S
= 2 kΩ
BC 859W
f= 30 Hz … 15 kHz
–
–
–
–
1.2
1.0
1.0
1.0
4
3
4
4
BC 860W
BC 859W
BC 860W
f= 1 kHz, ∆ f = 200 Hz
Equivalent noise voltage
n
µV
I
C
= 0.2 mA, VCE = 5 V, R
S
= 2 kΩ
BC 860W
f= 10 Hz … 50 Hz
–
–
0.110
Semiconductor Group
4
BC 856W ... BC 860W
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
5
BC 856W ... BC 860W
Collector cutoff current ICB0 = f (T
A
)
Collector-emitter saturation voltage
V
CB = 30 V
IC = f (VCEsat), hFE = 20
DC current gain hFE = f (I
C)
Base-emitter saturation voltage
V
CE = 5 V
IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 856W ... BC 860W
h parameter h
e
= f (IC) normalized
h parameter h
e
= f (VCE) normalized
VCE = 5 V
IC
= 2 mA
Noise figure F = f (VCE
)
Noise figure F = f (f)
= 0.2 mA, VCE = 5 V, R = 2 kΩ
IC
= 0.2 mA, R = 2 kΩ, f = 1 kHz
S
IC
S
Semiconductor Group
7
BC 856W ... BC 860W
Noise figure F = f (I
C)
Noise figure F = f (I
C)
V
CE = 5 V, f = 120 Hz
VCE = 5 V, f = 1 kHz
Noise figure F = f (I )
C
V
CE = 5 V, f = 10 kHz
Semiconductor Group
8
相关型号：
BC859CW-TAPE-13
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC859CW-TAPE-7
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC859CWE6327
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC859CWE6433
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
BC859LEADFREE
Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CENTRAL
BC859R
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC859R-TAPE-13
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC859R-TAPE-7
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明