BC857BE6327 [INFINEON]
PNP Silicon AF Transistor; PNP硅晶体管自动对焦
| 型号： | BC857BE6327 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistor |
| 文件： | 总11页 (文件大小：866K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC857...-BC860...
PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC847...-BC850... (NPN)
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
1
BC857BL3 is not qualified according AEC Q101
Type
BC857A
BC857B
BC857BL3*
BC857BW
BC857C
BC857CW
BC858A
Marking
3Es
3Fs
3F
3Fs
3Gs
3Gs
3Js
Pin Configuration
Package
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT323
BC858B
3Ks
3Ks
3Ls
BC858BW
BC858C
BC858CW
BC859C
BC860B
3Ls
4Cs
4Fs
4Fs
4Gs
BC860BW
BC860CW
* Not qualified according AEC Q101
2011-09-19
1
BC857...-BC860...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC857..., BC860...
BC858..., BC859...
V
V
V
CEO
CBO
EBO
tot
45
30
Collector-base voltage
BC857..., BC860...
BC858..., BC859...
50
30
5
100
200
Emitter-base voltage
Collector current
mA
I
C
Peak collector current, t ≤ 10 ms
I
CM
P
p
mW
Total power dissipation
T ≤ 71 °C, BC857-BC860
330
250
250
S
T ≤ 135 °C, BC857BL3
S
T ≤ 124 °C, BC857W-BC860W
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BC857-BC860
BC857BL3
BC857W-BC860W
1
≤ 240
≤ 60
≤ 105
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-19
2
BC857...-BC860...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BC857..., BC860...
45
30
-
-
-
-
C
B
I = 10 mA, I = 0 , BC858..., BC859...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC857..., BC860...
50
30
-
-
-
-
C
E
I = 10 µA, I = 0 , BC858..., BC859...
C
E
Emitter-base breakdown voltage
I = 1 µA, I = 0
5
-
-
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 45 V, I = 0
-
-
-
-
0.015
5
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
1)
DC current gain
I = 10 µA, V = 5 V, h -grp.A
h
FE
-
-
-
140
250
480
180
290
520
-
-
-
C
CE
FE
I = 10 µA, V = 5 V, h -grp.B
C
CE
FE
I = 10 µA, V = 5 V, h -grp.C
C
CE
FE
I = 2 mA, V = 5 V, h -grp.A
125
220
420
250
475
800
C
CE
FE
I = 2 mA, V = 5 V, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, h -grp.C
C
CE
FE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
mV
CEsat
-
-
75
250
300
650
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
BEsat
-
-
700
850
-
-
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base-emitter voltage
I = 2 mA, V = 5 V
V
BE(ON)
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1Pulse test: t < 300µs; D < 2%
2011-09-19
3
BC857...-BC860...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
h
h
h
h
kΩ
11e
-
-
-
2.7
4.5
8.7
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
10
12e
21e
22e
-
-
-
1.5
2
3
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
-
-
-
-
200
330
600
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
µS
dB
-
-
-
18
30
60
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-
1
4
Noise figure
F
V
I = 0.2 mA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ, BC859, BC850
S
Equivalent noise voltage
-
-
0.11 µV
n
I = 200 mA, V = 5 V, R = 2 kΩ,
C
CE
S
f = 10...50 Hz, BC860
2011-09-19
4
BC857...-BC860...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 1 V
I = ƒ(V
), h = 20
CE
C
CEsat FE
EHP00382
EHP00380
103
10 2
mA
5
100 C
25 C
Ι C
h FE
100 C
25 C
-50 C
-50
C
102
5
101
5
100
5
101
5
100
10 -1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.1
0.2
0.3
0.4
V
0.5
mA
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CBO
EHP00379
EHP00381
102
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
10 1
5
100
5
100
5
10 -1
10-1
0
0
50
100
150
C
0.2
0.4
0.6
0.8
V
1.2
TA
VBEsat
2011-09-19
5
BC857...-BC860...
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 5 V
Emitter-base capacitance C = ƒ(V )
CE
eb EB
EHP00378
103
12
pF
MHz
5
f T
10
9
8
7
6
5
4
3
2
1
0
102
5
CEB
CCB
22
101
10-1
5
10 0
5
101
10 2
V
0
4
8
12
16
mA
V
(V
Ι C
CB EB
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC856-BC860
BC857BL3
360
mW
300
mW
300
270
240
210
180
150
120
90
250
225
200
175
150
125
100
75
60
50
30
25
0
0
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
°C
S
T
T
S
2011-09-19
6
BC857...-BC860...
Total power dissipation P = ƒ(T )
BC857W-BC860W
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
tot
S
p
BC857/W-BC860/W
EHP00377
103
300
mW
Ptotmax
t p
5
t p
PtotDC
D
=
250
225
200
175
150
125
100
75
T
T
102
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
50
25
100
0
10-6 10-5 10-4 10-3 10-2
s
100
°C
0
15 30 45 60 75 90 105 120
150
T
t p
S
Permissible Puls Load R
BC857BL3
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC857BL3
10 2
10 1
10 0
10 -1
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.5
0.2
0.2
0.1
0.5
0.05
0.02
0.01
0.005
D = 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
t
p
p
2011-09-19
7
Package SOT23
BC857...-BC860...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-09-19
8
Package SOT323
BC857...-BC860...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2011-09-19
9
Package TSLP-3-1
BC857...-BC860...
Package Outline
Top view
Bottom view
0.4+0.1
0.05
0.6
1)
0.035
0.05 MAX.
0.5
3
3
1
2
1
2
0.05
1)
0.35
Pin 1
marking
0.035
2x0.15
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
0.45
R0.1
0.2
0.225
0.2
0.17
0.225
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
4
Pin 1
marking
0.76
2011-09-19
10
BC857...-BC860...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-19
11
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