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BC847W [INFINEON]

PNP Silicon AF Transistors; PNP硅晶体管自动对焦
BC847W
型号： BC847W
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistors
PNP硅晶体管自动对焦

晶体 晶体管 光电二极管 IOT
文件： 总8页 (文件大小：233K)
中文：  中文翻译
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BC856W...BC860W  
PNP Silicon AF Transistors  
For AF input stages and driver applications  
High current gain  
3
Low collector-emitter saturation voltage  
Low noise between 30 Hz and 15 kHz  
Complementary types:  
2
BC846W, BC847W, BC848W  
BC849W, BC850W (NPN)  
1
VSO05561  
Type  
Marking  
3As  
3Bs  
3Es  
3Fs  
3Gs  
3Js  
3Ks  
3Ls  
4As  
4Bs  
4Cs  
4Fs  
Pin Configuration  
Package  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
SOT323  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
1 = B  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
2 = E  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
3 = C  
BC856AW  
BC856BW  
BC857AW  
BC857BW  
BC857CW  
BC858AW  
BC858BW  
BC858CW  
BC859AW  
BC859BW  
BC859CW  
BC860BW  
BC860CW  
4Gs  
1
Dec-11-2001  
BC856W...BC860W  
Maximum Ratings  
Parameter  
Symbol  
Unit  
BC856W BC857W BC858W  
BC860W BC859W  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Peak base current  
65  
80  
80  
5
45  
50  
50  
30  
30  
30  
5
V
V
V
V
V
CEO  
CBO  
CES  
EBO  
5
100  
200  
200  
200  
250  
150  
-65 ... 150  
mA  
mA  
I
C
I
CM  
I
BM  
Peak emitter current  
I
EM  
mW  
°C  
Total power dissipation, T = 124 °C  
Junction temperature  
P
tot  
S
T
j
Storage temperature  
T
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
105  
K/W  
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
V
(BR)CEO  
(BR)CBO  
I = 10 mA, I = 0  
BC856W  
BC857/860W  
BC858/859W  
65  
45  
30  
-
-
-
-
-
-
C
B
Collector-base breakdown voltage  
80  
50  
30  
-
-
-
-
-
-
I = 10 µA, I = 0  
BC856W  
BC857/860W  
BC858/859W  
C
E
1
For calculation of R  
thJA  
please refer to Application Note Thermal Resistance  
2
Dec-11-2001  
BC856W...BC860W  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CES  
I = 10 µA, V = 0  
80  
50  
30  
-
-
-
-
-
-
BC856W  
BC857/860W  
BC858/859W  
C
BE  
Emitter-base breakdown voltage  
5
-
-
-
-
15  
5
V
(BR)EBO  
I = 1 µA, I = 0  
E
C
Collector cutoff current  
= 30 V, I = 0  
-
nA  
µA  
-
I
CBO  
V
CB  
E
Collector cutoff current  
-
I
CBO  
V
= 30 V, I = 0 , T = 150 °C  
CB  
E
A
DC current gain 1)  
I = 10 µA, V = 5 V  
h
FE  
h -group A  
-
-
-
140  
250  
480  
-
-
-
C
CE  
FE  
h -group B  
FE  
h -group C  
FE  
DC current gain 1)  
I = 2 mA, V = 5 V  
h
FE  
h -group A  
125  
220  
420  
180  
290  
520  
250  
475  
800  
C
CE  
FE  
h -group B  
FE  
h -group C  
FE  
Collector-emitter saturation voltage1)  
mV  
V
CEsat  
I = 10 mA, I = 0.5 mA  
-
-
75  
250  
300  
650  
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter saturation voltage 1)  
V
V
BEsat  
I = 10 mA, I = 0.5 mA  
-
-
700  
850  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
Base-emitter voltage 1)  
BE(ON)  
I = 2 mA, V = 5 V  
600  
-
650  
-
750  
820  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1) Pulse test: t ≤=300µs, D = 2%  
3
Dec-11-2001  
BC856W...BC860W  
Electrical Characteristics at T = 25 °C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
AC characteristics  
Transition frequency  
-
-
-
250  
3
-
5
MHz  
pF  
f
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
C
cb  
V
= 10 V, f = 1 MHz  
CB  
10  
15  
Emitter-base capacitance  
C
eb  
V
= 0.5 V, f = 1 MHz  
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
k
11e  
h -gr.A  
FE  
-
-
-
2.7  
4.5  
8.7  
-
-
-
C
CE  
FE  
h -gr.B  
h -gr.C  
FE  
-4  
Open-circuit reverse voltage transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
FE  
10  
h
12e  
h -gr.A  
-
-
-
1.5  
2
3
-
-
-
C
CE  
h -gr.B  
FE  
h -gr.C  
FE  
Short-circuit forward current transf.ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
-
h
21e  
h -gr.A  
-
-
-
200  
330  
600  
-
-
-
C
CE  
FE  
h -gr.B  
FE  
h -gr.C  
FE  
Open-circuit output admittance  
h
S
22e  
I = 2 mA, V = 5 V, f = 1 kHz  
h -gr.A  
-
-
-
-
18  
30  
60  
-
-
-
-
C
CE  
FE  
h -gr.B  
FE  
h -gr.C  
FE  
10  
dB  
Noise figure  
F
F
V
I = 200 µA, V = 5 V, R = 2 k ,  
BC856W  
BC857W  
BC858W  
C
CE  
S
f = 1 kHz, f = 200 Hz  
Noise figure  
I = 200 µA, V = 5 V, R = 2 k ,  
C
CE  
S
f = 1 kHz, f = 200 Hz  
-
-
-
1
1
-
4
4
BC859W  
BC860W  
0.11 µV  
Equivalent noise voltage  
n
I = 200 µA, V = 5 V, R = 2 k ,  
BC860W  
C
CE  
S
f = 10 ... 50 Hz  
4
Dec-11-2001  
BC856W...BC860W  
Total power dissipation P = f (T )  
Collector-base capacitance C = f (V  
)
CBO  
tot  
S
CB  
Emitter-base capacitance C = f (V  
)
EB  
EBO  
EHP00376  
12 BC 856...860  
pF  
300  
CCB0  
CEB0  
(
)
mW  
10  
8
200  
150  
100  
50  
CEBO  
6
4
CCBO  
2
0
0
°C  
0
20  
40  
60  
80  
100 120  
150  
10 -1  
5
10 0  
V
101  
T
(
)
VCB0 VEB0  
S
Permissible pulse load  
Transition frequency f = f (I )  
T
C
P
/ P  
= f (t )  
V
= 5V  
totmax  
totDC  
p
CE  
EHP00378  
103  
EHP00377  
103  
Ptotmax  
PtotDC  
MHz  
5
t p  
5
t p  
f T  
D
=
T
T
102  
5
D
0
=
0.005  
0.01  
0.02  
0.05  
0.1  
102  
5
0.2  
0.5  
101  
5
100  
101  
10-6 10-5 10-4 10-3 10-2  
s
100  
10-1  
5
10 0  
5
101  
10 2  
mA  
t p  
Ι C  
5
Dec-11-2001  
BC856W...BC860W  
Collector-emitter saturation voltage  
Collector cutoff current I  
= f (T )  
A
CBO  
I = f (V  
), h = 20  
V
= 30V  
C
CEsat  
FE  
CB  
EHP00380  
EHP00381  
10 2  
10 4  
nA  
mA  
Ι C  
ΙCB0  
10 3  
5
100 C  
25 C  
-50 C  
101  
5
max  
10 2  
5
typ  
101  
5
100  
5
100  
5
10 -1  
10 -1  
0
0
50  
100  
150  
C
0.1  
0.2  
0.3  
0.4  
V
0.5  
TA  
VCEsat  
Base-emitter saturation voltage  
DC current gain h = f (I )  
FE  
C
I = f (V  
), h = 20  
V
= 5V  
C
BEsat  
FE  
CE  
EHP00379  
EHP00382  
102  
103  
mA  
5
100 C  
25 C  
Ι C  
h FE  
100  
25  
-50  
C
C
C
-50  
C
101  
5
102  
5
101  
5
100  
5
100  
10-1  
0
10-2  
5 10 -1  
5 10 0  
5 101  
10 2  
0.2  
0.4  
0.6  
0.8  
V
1.2  
mA  
Ι C  
VBEsat  
6
Dec-11-2001  
BC856W...BC860W  
h parameter h = f (I ) normalized  
h parameter h = f (V ) normalized  
e
C
e
CE  
V
= 5V  
I = 2mA  
CE  
C
BC 856...860  
EHP00383  
BC 856...860  
EHP00384  
10 2  
2.0  
1.5  
1.0  
0.5  
0
5
he  
he  
Ι C = 2 mA  
h11  
V
CE = 5 V  
h11e  
10 1  
5
h12  
h12e  
10 0  
5
h22  
h21e  
h 22e  
10-1  
10-1  
5
10 0  
101  
0
10  
20  
V
30  
mA  
VCE  
Ι C  
Noise figure F = f (V )  
Noise figure F = f (f)  
I = 0.2mA, V = 5V, R = 2k  
CE  
I = 0.2mA, R = 2k , f = 1kHz  
C
S
C
CE  
S
BC 856...860  
EHP00385  
BC 856...860  
EHP00386  
20  
dB  
20  
dB  
F
F
15  
10  
5
15  
10  
5
0
0
10-1  
5
10 0  
5
101  
V
102  
10-2  
10 -1  
100  
101 kHz 10 2  
VCE  
f
7
Dec-11-2001  
BC856W...BC860W  
Noise figure F = f (I )  
Noise figure F = f (I )  
C
C
V
= 5V, f = 120Hz  
V
= 5V, f = 1kHz  
CE  
CE  
BC 856...860  
EHP00388  
BC 856...860  
EHP00387  
20  
20  
dB  
dB  
F
F
15  
15  
100 k  
10 k  
Ω
Ω
RS = 1 M  
Ω
RS = 1 M  
Ω
100 k  
Ω
10 k  
Ω
10  
10  
500  
Ω
1 k  
Ω
5
0
5
0
1 k  
Ω
Ω
500  
10-3  
10-2  
10-1  
100  
101  
mA  
10-3  
10-2  
10-1  
100  
101  
mA  
Ι C  
Ι C  
Noise figure F = f (I )  
C
V
= 5V, f = 10kHz  
CE  
BC 856...860  
EHP00389  
20  
dB  
F
15  
RS = 1 M  
Ω
100 k  
10 k  
Ω
Ω
10  
500  
Ω
5
0
1 k  
Ω
10-3  
10-2  
10-1  
100  
101  
mA  
Ι C  
8
Dec-11-2001  

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