BC808-16W [INFINEON]
PNP Silicon AF Transistor (For general AF applications High collector current High current gain); PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）
| 型号： | BC808-16W |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistor (For general AF applications High collector current High current gain) |
| 文件： | 总5页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC 807-16W
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
Type
Marking Ordering Code
Pin Configuration
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
BC 807-16W 5As
BC 807-25W 5Bs
BC 807-40W 5Cs
BC 808-16W 5Es
BC 808-25W 5Fs
BC 808-40W 5Gs
Q62702-C2325
Q62702-C2326
Q62702-C2327
Q62702-C2328
Q62702-C2329
Q62702-C2330
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
BC 807 W
V
V
V
V
CEO
CBO
EBO
45
25
BC 808 W
Collector-base voltage
BC 807 W
50
BC 808 W
30
Emitter-base voltage
DC collector current
Peak collector current
Base current
5
I
I
I
500
mA
A
C
1
CM
B
100
mA
mW
°C
Total power dissipation, T = 130°C
P
250
S
tot
j
Junction temperature
Storage temperature
T
T
150
- 65 ... + 150
stg
Thermal Resistance
1)
≤
≤
Junction ambient
R
R
215
80
K/W
thJA
Junction - soldering point
thJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Dec-19-1996
BC 807-16W
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BC 807 W
45
25
-
-
-
-
C
B
I = 10 mA, I = 0 , BC 808 W
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC 807 W
50
30
-
-
-
-
C
B
I = 10 µA, I = 0 , BC 808 W
C
B
Base-emitter breakdown voltage
I = 10 µA, I = 0
(BR)EBO
5
-
-
E
C
Collector-base cutoff current
I
I
CBO
V
CB
V
CB
= 25 V, T = 25 °C
-
-
-
-
100
nA
µA
nA
A
= 25 V, T = 150 °C
50
A
Emitter cutoff current
= 4 V, I = 0
EBO
V
EB
-
-
100
C
DC current gain
I = 100 mA, V = 1 V, BC ... 16 W
h
-
FE
100
160
250
60
160
250
400
630
C
CE
I = 100 mA, V = 1 V, BC ... 25 W
250
C
CE
I = 100 mA, V = 1 V, BC ... 40 W
350
C
CE
I = 300 mA, V = 1 V, BC ... 16 W
-
-
-
-
C
CE
I = 300 mA, V = 1 V, BC ... 25 W
100
170
-
-
C
CE
I = 300 mA, V = 1 V, BC ... 40 W
C
CE
Collector-emitter saturation voltage 1)
I = 500 mA, I = 50 mA
V
V
V
CEsat
-
-
-
-
0.7
C
B
Base-emitter saturation voltage 1)
I = 500 mA, I = 50 mA
BEsat
1.2
C
B
µ
1) Pulse test: t < 300 s; D < 2%
Semiconductor Group
2
Dec-19-1996
BC 807-16W
PNP Silicon AF Transistor
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
Transition frequency
f
MHz
pF
T
I = 50 mA, V = 5 V, f = 100 MHz
-
-
-
200
10
-
-
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
V
EB
60
Semiconductor Group
3
Dec-19-1996
BC 807-16W
Total power dissipation P = f (T *;T )
Permissible Pulse Load R = f(t )
thJS p
tot
A
S
* Package mounted on epoxy
10 3
K/W
300
mW
Ptot
RthJS
10 2
TS
200
150
100
TA
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
50
0
10 -1
0
20
40
60
80
100 120 °C 150
TA,TS
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Permissible Pulse Load P
/ P
= f(t )Collectot cutoff current I
= f (T )
CBO A
totmax
totDC
p
V
CB
= 60V
10 3
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.2
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
4
Dec-19-1996
BC 807-16W
DC current gain h = f (I )
Transition frequency f = f (I )
T C
FE
C
V
CE
= 1V
VCE = 5V
Base-emitter saturation voltage
I = f (V ), h = 10
Collector-emitter saturation voltage
I = f (V ), h = 10
C
BEsat
FE
C
CEsat
FE
Semiconductor Group
5
Dec-19-1996
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