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BB804SF2-E6327 [INFINEON]

Variable Capacitance Diode, 44.75pF C(T), 18V, Silicon, Abrupt, ROHS COMPLIANT PACKAGE-3;
BB804SF2-E6327
型号： BB804SF2-E6327
厂家： Infineon    Infineon
描述：

Variable Capacitance Diode, 44.75pF C(T), 18V, Silicon, Abrupt, ROHS COMPLIANT PACKAGE-3
文件： 总5页 (文件大小：800K)
中文：  中文翻译
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BB804...  
Silicon Variable Capacitance Diode  
• For FM tuners  
• Monolithic chip with common cathode  
for perfect tracking of both diodes  
• Uniform "square law" characteristics  
• Ideal HiFi tuning device when used in  
low-distortion, back-to-back configuration  
• Pb-free (ROHS compliant) package  
BB804  
3
D
2
D
1
1
2
Type  
BB804  
Package  
SOT23  
Configuration  
common cathode  
L (nH) Marking  
S
1.8  
SF1/2/3*  
*For differences see next page Capacitance groups  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
18  
20  
50  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
Operating temperature range  
Storage temperature  
V
V
R
RM  
mA  
°C  
I
F
T
T
-55 ... 125  
-55 ... 150  
op  
stg  
2011-06-15  
1
BB804...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
Reverse current  
I
nA  
R
V = 16 V  
-
-
-
-
20  
200  
R
V = 16 V, T = 65 °C  
R
A
AC Characteristics  
1)  
42  
-
47.5 pF  
-
Diode capacitance  
C
T
V = 2 V, f = 1 MHz  
R
1.65  
1.71  
0.18  
200  
330  
Capacitance ratio  
C /C  
T2 T8  
V = 2 V, V = 8 V, f = 1 MHz  
R
R
Series resistance  
r
-
-
-
-
-
-
Ω
S
V = 2 V, f = 100 MHz  
R
Figure of merit  
Q
f = 100 MHz, V = 2 V  
Temperature coefficient of diode capacitance  
R
TC  
ppm/K  
C
V = 2 V, f = 1 MHz  
R
1
Capacitance groups at 2V , coded 1; 2 ; 3  
T
C /groups  
1
2
3
C
C
min  
max  
43pF  
44.5pF 45.5pF  
44pF  
45pF  
46.5pF  
2V  
2V  
The capacitance subgroup is marked by the subgroup number printed on the component and the package  
label. A packing unit (e.g. 8mm tape) contain diodes of one subgroup only. Delivery of different  
capacitance subgroups requires a special agreement.  
2011-06-15  
2
BB804...  
Diode capacitance C = ƒ (V )  
Capacitance ratio C /C = ƒ (V )  
Tref T R  
T
R
f = 1MHz  
f = 1MHz  
EHD07051  
EHD07050  
80  
3
CT ref  
CT  
pF  
CT1V  
CT  
C T  
70  
60  
50  
40  
30  
20  
10  
CT2V  
CT  
2
1
0
0
0
10-1  
100  
101  
V
10 2  
5
10  
15  
V 20  
VR  
VR  
Temperatur coefficient TC = ƒ (V )  
C
R
EHD07052  
10-3  
1
K
TCC  
10-4  
10-5  
10 -1  
100  
101  
V
10 2  
VR  
2011-06-15  
3
Package SOT23  
BB804...  
Package Outline  
0.1  
1
0.1 MAX.  
0.1  
2.9  
B
3
1
2
1)  
+0.1  
0.4  
A
-0.05  
0.08...0.15  
0...8˚  
C
0.95  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2011-06-15  
4
BB804...  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-15  
5

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