BB644E7908 [INFINEON]
Variable Capacitance Diode, 41.8pF C(T),;
| 型号： | BB644E7908 |
| 厂家： | 
Infineon |
| 描述： | Variable Capacitance Diode, 41.8pF C(T), 二极管 |
| 文件： | 总3页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB644 /BB664...
Silicon Variable Capacitance Diodes
For VHF TV-tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB644
BB664/-02V
1
2
Type
BB644
BB664
Package
SOD323
SCD80
SC79
Configuration
single
L (nH) Marking
1.8
0.6
0.6
yellow 4
single
44
4
BB664-02V
single
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
30
35
V
Diode reverse voltage
Peak reverse voltage
R 5k
V
V
R
RM
20
mA
°C
Forward current
Operating temperature range
Storage temperature
I
F
T
-55 ... 150
-55 ... 150
op
T
stg
Nov-14-2002
1
BB644 /BB664...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Reverse current
I
nA
R
V = 30 V
-
-
-
-
10
100
R
V = 30 V, T = 85 °C
R
A
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
39
41.8
44.5
R
V = 2 V, f = 1 MHz
29.4 31.85 34.2
R
V = 25 V, f = 1 MHz
2.5
2.4
2.7
2.55
2.85
2.75
R
V = 28 V, f = 1 MHz
R
15
11
-
16.4
11.8
-
17.8
12.6
2
Capacitance ratio
C /C
T1 T28
V = 1 V, V = 28 V, f = 1 MHz
R
R
Capacitance ratio
V = 1 V, V = 25 V, f = 1 MHz
C /C
T2 T25
R
R
1)
%
Capacitance matching
V = 1 V, V = 28 V, f = 1 MHz
C /C
T T
R
R
Series resistance
r
-
0.6
0.75
S
V = 5 V, f = 470 MHz
R
1For details please refer to Application Note 047.
Nov-14-2002
2
BB644 /BB664...
Diode capacitance C = (V )
Temperature coefficient of the diode
T
R
f = 1MHz
capacitance T = (V )
Cc
R
10 -3
70
pF
60
55
50
45
40
35
30
25
20
15
10
5
1/°C
10 -4
10 -5
0
0
5
10
15
20
25
35
10 0
10 1
10 2
V
V
V
V
R
R
Reverse current I = (V )
R
R
T = Parameter
A
10 -9
A
85°C
10 -10
25°C
10 -11
V
0
4
8
12
16
20
24
30
V
R
Nov-14-2002
3
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