BB439E6433 [INFINEON]
Variable Capacitance Diode, Very High Frequency, 43pF C(T), 28V, Silicon, SOD323, 2 PIN;
| 型号： | BB439E6433 |
| 厂家： | 
Infineon |
| 描述： | Variable Capacitance Diode, Very High Frequency, 43pF C(T), 28V, Silicon, SOD323, 2 PIN 光电二极管 |
| 文件： | 总5页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB439...
Silicon Variable Capacitance Diode
• For VHF tuned circuit applications
• High figure of merit
• Pb-free (RoHS compliant) package
BB439
1
2
Type
BB439
Package
SOD323
Configuration
single
L (nH) Marking
S
1.8
white 2
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
28
30
V
Diode reverse voltage
Peak reverse voltage
( R ≥ 5kΩ )
V
V
R
RM
20
mA
°C
Forward current
Operating temperature range
Storage temperature
I
F
T
T
-55 ... 125
-55 ... 150
op
stg
2011-06-15
1
BB439...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Reverse current
I
nA
pF
R
V = 28 V
-
-
-
-
20
200
R
V = 28 V, T = 85 °C
R
A
AC Characteristics
Diode capacitance
C
T
V = 1 V, f = 1 MHz
-
43
34.5
29
-
R
V = 2 V, f = 1 MHz
31.5
26.5
4.3
37.5
31.5
6
R
V = 3 V, f = 1 MHz
R
V = 25 V, f = 1 MHz
5.1
R
6
5
-
6.9
5.8
-
8
Capacitance ratio
C /C
T2 T25
V = 2 V, V = 25 V, f = 1 MHz
R
R
6.5
3
Capacitance ratio
V = 3 V, V = 25 V, f = 1 MHz
C /C
T3 T25
R
R
1)
Capacitance matching
V = 3 V, V = 25 V, f = 1 MHz
∆C /C
%
T
T
R
R
Series resistance
r
-
0.35
0.5
Ω
S
V = 10 V, f = 100 MHz
R
Figure of merit
Q
V = 3 V, f = 50 MHz
-
-
280
600
-
-
R
V = 25 V, f = 200 MHz
R
1
For details please refer to Application Note 047.
2011-06-15
2
BB439...
Diode capacitance C = ƒ (V )
Temperature coefficient of the diode
T
R
f = 1MHz
capacitance T = ƒ (V )
Cc
R
10 -3
BB 439
EHD07036
60
C T pF
50
1/°C
40
30
20
10
0
10 -4
10 -5
10 0
10 1
10 2
V
10-1
100
101
V
VR
102
V
R
2011-06-15
3
Package SOD323
BB439...
2011-06-15
4
BB439...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-15
5
©2020 ICPDF网 联系我们和版权申明