BAW78M [INFINEON]
Silicon Switching Diode (Switching applications High breakdown voltage); 硅开关二极管（开关应用高击穿电压）
| 型号： | BAW78M |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode (Switching applications High breakdown voltage) |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAW 78M
Silicon Switching Diode
Preliminary data
4
• Switching applications
• High breakdown voltage
5
3
2
1
VPW05980
Type
Marking Ordering Code Pin Configuration
GDs
Package
BAW 78M
Q62702-A3471 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
400
V
R
400
RM
I
I
I
1
A
F
Peak forward current
Surge forward current, t = 1 µs
1
FM
FS
10
P
T
T
1
W
Total power dissipation, T ≤ 110 °C
tot
j
S
Junction temperature
Storage temperature
150
°C
- 65 ...+150
stg
Thermal Resistance
1)
Junction - ambient
R
R
K/W
≤ 95
≤ 40
thJA
thJS
Junction - soldering point
2
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm Cu
Semiconductor Group
1
Jul-27-1998
1998-11-01
Semiconductor Group
1
BAW 78M
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Breakdown voltage
V
V
400
-
-
V
(BR)
F
I
= 100 µA
(BR)
Forward voltage
I = 1 A
-
-
-
1.6
2
F
I = 2 A
-
F
Reverse current
I
I
-
-
1
µA
R
V = 400 V
R
Reverse current
-
-
50
R
V = 400 V, T = 150 °C
R
A
AC characteristics
Diode capacitance
C
-
-
10
1
-
-
pF
ns
D
V = 0 V, f = 1 MHz
R
Reverse recovery time
t
rr
I = 200 mA, I = 200 mA, R = 100 Ω,
F
R
L
measured at I = 20mA
R
Test circuit for reverse recovery time
DUT
tr
tp
t
trr
10%
90%
ΙF
t
Oscillograph
ΙF
ΙR = 20 mA
EHN00020
VR
Pulse generator: t = 100ns, D = 0.05,
Oscillograph: R = 50Ω, t = 0.35ns,
p
r
t = 0.6ns, R = 50Ω
C ≤ 1pF
r
i
Semiconductor Group
Semiconductor Group
2
Jul-27-1998
1998-11-01
2
BAW 78M
Forward current I = f (T *;T )
F
A
S
* Package mounted on epoxy
1200
mA
T
S
800
I
T
A
600
400
200
0
°C
0
20
40
60
80
100 120
150
T ,T
A
S
Permissible Pulse Load
Permissible Pulse Load R
= f(t )
thJS
p
I
/ I
= f(t )
Fmax FDC
p
10 2
10 2
K/W
-
I
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
R
I
10 1
0.5
0.2
0.1
0.2
0.5
10 0
0.05
0.02
0.01
0.005
D = 0
10 -1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Semiconductor Group
Semiconductor Group
3
Jul-27-1998
1998-11-01
3
BAW 78M
Forward current I = f V )
Reverse current I = f (T )
F
F
R
A
T = 25°C
A
BAS 78A...D
EHB00047
BAS 78A...D
EHB00048
101
A
5
10
Ι F
nA
Ι R
max
4
100
10
5
typ
3
10-1
10
5
10 2
5
10-2
10 1
10-3
0
1
V
2
0
50
100
150
C
V F
TA
Semiconductor Group
Semiconductor Group
4
Jul-27-1998
1998-11-01
4
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