BAV222E6327 [INFINEON]

Variable Capacitance Diode, 1.5pF C(T), 85V, Silicon, SC-75, SMD, 3 PIN;


型号：	BAV222E6327
厂家：	Infineon
描述：	Variable Capacitance Diode, 1.5pF C(T), 85V, Silicon, SC-75, SMD, 3 PIN 光电二极管
文件：	总5页 (文件大小：236K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BAV222 / BAW222

Silicon Switching Diode

• For high-speed switching applications (trr < 4ns)

• Very low diode capacitance (C < 1.5pF)

• Small SMD package SC75 (JEDEC: SOT416)

BAV222

BAW222

Type

BAV222*

BAW222*

Package

SC75

Configuration

common cathode

common anode

Marking

A4s

A1s

* Preliminary

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

200

300

4.5

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

Peak forward current

Surge forward current, t = 1µs

Mean rectifying current

Total power dissipation

100

tot

BAV222, T ≤ 73°C

250

BAW222, T ≤ tbd

150

°C

Junction temperature

Storage temperature

stg

-65 ... 150

Oct-07-2003

BAV222 / BAW222

Thermal Resistance

Parameter

Junction - soldering point

BAV222

Symbol

Value

Unit

K/W

thJS

≤ 310

≤ tbd

BAW222

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 100 µA

(BR)

Reverse current

V = 70 V

µA

0.1

V = 25 V, T = 150 °C

V = 70 V, T = 150 °C

Forward voltage

I = 1 mA

715

855

1000

1200

1250

I = 10 mA

I = 50 mA

I = 100 mA

I = 150 mA

AC Characteristics

Diode capacitance

1.5 pF

V = 6 V, f = 1 MHz

Reverse recovery time

I = 5 mA, V = 6 V, measured at 0.1 I ,

R = 100 Ω

Test circuit for reverse recovery time

D.U.T.

Pulse generator: t = 100ns, D = 0.05, t = 0.6ns,

R = 50Ω

Oscillograph

Ι_F

Oscillograph: R = 50 , t = 0.35ns, C = 0.05pf

EHN00019

¹For calculation of R_thJAplease refer to Application Note Thermal Resistance

Oct-07-2003

BAV222 / BAW222

Diode capacitance C = ƒ (V )

Reverse current I = ƒ(V )

f = 1MHz

T = Parameter

10 ^-4

10 ^-5

10 ^-6

150 °C

85 °C

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

10 ^-7

10 ^-8

25 °C

10 ^-9

10 ^-10

10 ^-11

10 ^-12

-40 °C

10 12 14 16

Forward current I = ƒ (V )

T = Parameter

10 ⁰

10 ^-1

10 ^-2

10 ^-3

150 °C

85 °C

25 °C

-40 °C

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.2

Oct-07-2003

Package SC75

Package Outline

±0.2

1.6

0.2

+0.1

±0.1

-0.05

0.1 MAX. 0.7

+0.2

acc. to

DIN 6784

+0.1

0.2

±0.1

0.15

-0.05

0.5

0.10

0.20

Foot Print

0.4

0.5 0.5

Marking Layout

Manufacturer

Pin 1

Type code

BCR108T

Example

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel

Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

0.2 MAX.

0.45

Pin 1

1.75

0.9

Impressum

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München

Attention please!

The information herein is given to describe certain components and shall not be

considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of

non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.Infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon

Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

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