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BAT68-04 [INFINEON]

Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching); 硅肖特基二极管（混频器应用在VHF / UHF频段用于高速开关）
BAT68-04
型号： BAT68-04
厂家： Infineon    Infineon
描述：

Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)
硅肖特基二极管（混频器应用在VHF / UHF频段用于高速开关）

肖特基二极管 微波混频二极管 开关 光电二极管
文件： 总5页 (文件大小：104K)
中文：  中文翻译
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Silicon Schottky Diodes  
BAT 68 …  
● For mixer applications in the VHF/UHF range  
● For high-speed switching  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Type  
Marking  
Ordering Code Pin Configuration  
(tape and reel)  
BAT 68  
83  
Q62702-A926  
SOT-23  
BAT 68-04  
BAT 68-05  
BAT 68-06  
84  
85  
86  
Q62702-A4  
Q62702-A15  
Q62702-A19  
1)  
For detailed information see chapter Package Outlines.  
02.96  
Semiconductor Group  
1
BAT 68 …  
● For mixer applications in the VHF/UHF range  
● For high-speed switching  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Package1)  
Type  
Marking  
Ordering Code Pin Configuration  
(tape and reel)  
BAT 68-07  
87  
Q62702-A44  
SOT-143  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
Unit  
V
Reverse voltage  
V
R
8
Forward current  
I
F
130  
mA  
mW  
˚C  
Power dissipation, TS ≤ 60 ˚C  
Junction temperature  
Storage temperature range  
P
tot  
150  
T
j
150  
T
stg  
– 55 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 750  
≤ 590  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.  
2)  
Semiconductor Group  
2
BAT 68 …  
Electrical Characteristics per Diode  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
–
Unit  
min.  
max.  
Breakdown voltage  
VBR  
8
–
V
IR  
= 10 µA  
Reverse current  
IR  
µA  
V
V
R
R
= 1 V  
= 1 V, T = 60 ˚C  
–
–
–
–
0.1  
1.2  
A
Forward voltage1)  
VF  
mV  
–
–
–
–
340  
500  
I
F
= 1 mA  
= 10 mA  
IF  
Diode capacitance  
= 0, f = 1 MHz  
CT  
–
–
1
pF  
V
R
Differential forward resistance  
= 5 mA, f = 10 kHz  
rf  
–
–
10  
Ω
IF  
1)  
Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, ∆VF = 20 mV max.  
Semiconductor Group  
3
BAT 68 …  
Forward current I  
F
= f (V  
F)  
Forward current I  
F
= f (T  
S
, T *)  
A
*Package mounted on alumina  
BAT 68-04, -05, -06, -07  
Forward current I  
F
= f (T  
S
; T  
A*)  
Reverse current I  
R
= f (V )  
R
*Package mounted on alumina  
BAT 68  
Semiconductor Group  
4
BAT 68 …  
Diode capacitance C  
T
= f (V  
R)  
Differential forward resistance r  
f
= f (I )  
F
f= 1 MHz  
f= 10 kHz  
Semiconductor Group  
5

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