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BAT64-W [INFINEON]

Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring); 硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用的集成扩散保护环）
BAT64-W
型号： BAT64-W
厂家： Infineon    Infineon
描述：

Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用的集成扩散保护环）

肖特基二极管 仪表
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中文：  中文翻译
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BAT 64...W  
Silicon Schottky Diodes  
3
• For low-loss, fast-recovery, meter protection,  
bias isolation and clamping applications  
• Integrated diffused guard ring  
• Low forward voltage  
2
1
VSO05561  
BAT 64W  
BAT 64-04W  
BAT 64-05W  
BAT 64-06W  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BAT 64W  
63s  
Q62702-A1159  
Q62702-A1160  
Q62702-A1161  
Q62702-A1162  
1 = A  
2 n.c.  
3 = C  
SOT-323  
BAT 64-04W 64s  
BAT 64-05W 65s  
BAT 64-06W 66s  
1 = A1  
1 = A1  
1 = C1  
2 = C2  
2 = A2  
2 = C2  
3 = C1/A2  
3 = C1/2  
3 = A1/2  
Maximum Ratings  
Parameter  
Symbol  
Value  
40  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
250  
mA  
I
F
Average forward current (50/60Hz, sinus)  
120  
I
FAV  
800  
Surge forward current (t< 100µs)  
I
FSM  
250  
mW  
°C  
Total power dissipation  
BAT 64W, T ≤120°C P  
S
tot  
tot  
tot  
250  
Total power dissipat. BAT64-04/06W, T ≤111°C P  
S
250  
Total power dissipation BAR 64-05W, T ≤104°C P  
S
Junction temperature  
Storage temperature  
150  
T
j
-55...+150  
T
stg  
Semiconductor Group  
Semiconductor Group  
1
Sep-07-1998  
1998-11-01  
1
BAT 64...W  
Thermal Resistance  
1)  
Junction - ambient  
Junction - ambient  
Junction - ambient  
BAT 64W  
K/W  
R
≤255  
≤290  
≤455  
≤120  
≤155  
≤185  
thJA  
1)  
1)  
BAT 64-04/06W  
BAT 64-05W  
R
thJA  
R
thJA  
Junction - soldering point BAT 64W  
Junction - soldering point BAT 64-04/06W  
Junction - soldering point BAT 64-05W  
R
thJS  
R
thJS  
R
thJS  
2
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm Cu  
Electrical Characteristics at T = 25 °C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Reverse current  
-
-
-
-
2
µA  
I
R
V = 30 V  
R
Reverse current  
200  
I
R
V = 30 V, T = 85 °C  
R
A
Forward voltage  
I = 1 mA  
mV  
V
F
-
-
-
-
320  
385  
440  
570  
350  
430  
520  
750  
F
I = 10 mA  
F
I = 30 mA  
F
I = 100 mA  
F
AC characteristics  
Diode capacitance  
-
4
6
pF  
C
T
V = 1 V, f = 1 MHz  
R
Semiconductor Group  
Semiconductor Group  
2
Sep-07-1998  
1998-11-01  
2
BAT 64...W  
Forward current I = f (V )  
Reverse current I = f (V )  
F
F
R
R
T = Parameter  
T = Parameter  
A
A
BAT 64...  
EHB00057  
BAT 64...  
EHB00058  
10 2  
102  
µ A  
mA  
ΙR  
Ι F  
T
C
A = 125  
10 1  
10 0  
101  
85  
C
T
A
= -40  
25  
C
C
85 C  
125 C  
100  
10 -1  
10 -2  
25 C  
10 -1  
10 -2  
0
10 -3  
0
0.5  
V
1
10  
20  
30  
V
VF  
VR  
Semiconductor Group  
Semiconductor Group  
3
Sep-07-1998  
1998-11-01  
3
BAT 64...W  
Forward current I = f (T *; T )  
F
A
S
*Package mounted on epoxy  
BAT 64W  
300  
mA  
T
S
T
A
200  
150  
100  
50  
I
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load I  
/ I  
= f (t )  
thJS  
p
Fmax FDC  
p
BAT 64W  
BAT 64W  
10 3  
10 2  
K/W  
-
10 2  
I
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
I
10 1  
10 1  
0.5  
0.2  
0.1  
0.2  
0.5  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
p
t
p
Semiconductor Group  
Semiconductor Group  
4
Sep-07-1998  
1998-11-01  
4
BAT 64...W  
Forward current I = f (T *; T )  
F
A
S
* Package mounted on epoxy  
BAT 64-04/06W  
300  
mA  
T
S
T
A
200  
150  
100  
50  
I
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load I  
/ I  
= f (t )  
thJS  
p
Fmax FDC  
p
BAT 64-04/06  
BAT 64-04/06W  
10 3  
10 2  
K/W  
-
10 2  
I
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
I
10 1  
10 1  
0.5  
0.2  
0.1  
0.2  
0.5  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
p
t
p
Semiconductor Group  
Semiconductor Group  
5
Sep-07-1998  
1998-11-01  
5
BAT 64...W  
Forward current I = f (T *; T )  
F
A
S
* Package mounted on epoxy  
BAT 64-05W  
300  
mA  
T
S
200  
I
T
A
150  
100  
50  
0
°C  
0
20  
40  
60  
80  
100 120  
150  
T ,T  
A
S
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load I  
/ I  
= f (t )  
thJS  
p
Fmax FDC  
p
BAT 64-05W  
BAT 64-05W  
10 3  
10 2  
K/W  
-
10 2  
I
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
R
I
10 1  
10 1  
0.5  
0.2  
0.1  
0.2  
0.5  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
p
t
p
Semiconductor Group  
Semiconductor Group  
6
Sep-07-1998  
1998-11-01  
6

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