BAT64-06 [INFINEON]
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring); 硅肖特基二极管（低损耗，快速恢复，仪表保护，偏置隔离和钳位应用的集成扩散保护环）
| 型号： | BAT64-06 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT 64
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
Pin Configuration
BAT 64-04
BAT64-05
BAT64-06
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
Package
SOT-23
BAT 64
63s
Q62702-A879
Q62702-A961
Q62702-A962
Q62702-A963
1 = A
3 = C
BAT 64-04 64s
BAT 64-05 65s
BAT 64-06 66s
1 = A
1 = A
1 = C
2 = C
2 = A
2 = C
3 = C/A SOT-23
3 = C/C SOT-23
3 = A/A SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
V
Diode reverse voltage
Forward current
V
R
40
I
250
120
800
mA
F
Average forward current (50/60Hz, sinus) I
FAV
FSM
≤ 10
Surge forward current (t
Total Power dissipation
ms)
I
P
tot
mW
°C
T = 61 °C
S
250
Junction temperature
Storage temperature
T
T
150
j
- 55 ... + 150
stg
Thermal Resistance
1)
≤
Junction ambient
R
R
495
K/W
thJA
Junction - soldering point
≤ 355
thJS
2
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm Cu
Semiconductor Group
1
Jan-31-1997
BAT 64
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Reverse current
I
µA
R
V = 25 V, T = 25 °C
-
-
-
-
2
R
A
V = 25 V, T = 85 °C
200
R
A
Forward voltage
I = 1 mA
V
F
-
-
-
-
320
385
440
570
350
430
520
750
mV
V
F
I = 10 mA
F
I = 30 mA
F
I = 100 mA
F
AC Characteristics
Diode capacitance
C
T
pF
V = 1 V, f = 1 MHz
R
-
4
6
Forward Current I = f(V )
Reverse current I = f (V )
R R
F
F
T = Parameter
A
Semiconductor Group
2
Jan-31-1997
BAT 64
Diode capacitance C = f (V )
Forward current I = f (T *;T )
F A S
T
R
f = 1MHz
* Package mounted on epoxy
BAT 64
Forward current I = f (T *;T )
F
A
S
* Package mounted on epoxy
BAT 64-04... (I per diode)
F
Semiconductor Group
3
Jan-31-1997
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