BAT32 [INFINEON]
Silicon Schottky Diode; 硅肖特基二极管
| 型号： | BAT32 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diode |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Schottky Diode
BAT 32
● RF detector
● Low-power mixer
● Zero bias
● Very low capacitance
● For frequencies up to 18 GHz
● HiRel/Mil-tested diodes available
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Frequency
band (GHz)
Marking Ordering Code
(tape and reel)
Pin Configuration
BAT 32 … 18 (X, Ku) 32
Q62702-A826
Cerec-X
Maximum Ratings
Parameter
Symbol
Values
6.5
Unit
V
Reverse voltage
V
R
Forward current
I
F
50
mA
˚C
Junction temperature
Storage temperature range
Operating temperature range
T
T
T
j
150
stg
op
– 55 … + 150
– 55 … + 150
1)
For detailed information see chapter Package Outlines.
BAT 32
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Breakdown voltage
V
V
(BR)
F
6.5
–
–
V
IR
= 1 mA
Forward voltage
I
I
F
F
= 1 mA
= 10 mA
–
–
0.2
0.6
–
–
Diode capacitance
= 0.15 V, f= 1 MHz
CT
–
0.20
0.24
pF
V
R
Differential resistance
= 0, f= 10 kHz
Ro
–
15
–
kΩ
V
F
Forward current I
F
= f (V )
F
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