BAT18- [INFINEON]
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance); 硅射频开关二极管（低损耗VHF / UHF开关上方的低正向电阻10 MHz的PIN二极管）
| 型号： | BAT18- |
| 厂家： | 
Infineon |
| 描述： | Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT 18
Silicon RF Switching Diode
BAT 18 …
● Low-loss VHF/UHF switch above 10 MHz
● Pin diode with low forward resistance
Package1)
Type
Marking
Ordering Code Pin Configuration
BAT 18
A2
Q62702-A787
SOT 23
BAT 18-04
BAT 18-05
BAT 18-06
AU
AS
AT
Q62702-A938
Q62702-A940
Q62702-A942
Maximum Ratings per Diode
Parameter
Symbol
Values
35
Unit
V
Reverse voltage
Forward current
V
R
IF
100
mA
Operating and
Top
– 55 … + 150 ˚C
storage temperature range
Tstg
Thermal Resistance
Junction - ambient
R
th JA
≤ 450
K/W
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
07.94
Semiconductor Group
1
BAT 18...
Electrical Characteristics per Diode
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
Forward voltage
VF
–
0.38
1.2
V
IF
= 100 mA
Reverse current
IR
nA
V
V
R
R
= 20 V
= 20 V, T
–
–
–
–
20
200
A
= 60 ˚C
Diode capacitance
= 20 V, f = 1 MHz
C
T
–
–
–
0.75
0.4
2
1
pF
Ω
V
R
Forward resistance
= 5 mA, f = 100 MHz
rf
0.7
–
IF
Series inductance
LS
nH
Diode capacitance C
T
= f (V
R)
Forward resistance r
f
= f (I )
F
f= 1 MHz
f= 100 MHz
Semiconductor Group
2
相关型号：
BAT18-04
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
INFINEON
BAT18-05
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
INFINEON
BAT18-06
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
INFINEON
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