BAT14-110S [INFINEON]
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier); 硅肖特基二极管（梁式引线技术低维高性能中等屏障）
| 型号： | BAT14-110S |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Schottky Diodes
BAT 14- … S
● Beam lead technology
● Low dimension
● High performance
● Medium barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code
Q62702-D1258
Q62702-D1267
Q62702-D1275
Q62702-D1284
Pin Configuration
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
–
S
Pointed cathode
Maximum Ratings
Parameter
Symbol
Values
Unit
BAT 14-020 S
BAT 14-090 S
BAT 14-050 S
BAT 14-110 S
Reverse voltage
V
R
4
4
V
Forward current
I
F
100
50
mA
˚C
Junction temperature
Storage temperature range
Operating temperature range
T
T
T
j
175
stg
op
– 65 … + 150
– 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
BAT 14- ...S
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Breakdown voltage
V
(BR)
V
I
R
= 10 µA
Diode capacitance
= 0, f = 1 MHz
4
–
–
CT
pF
0.35
0.25
0.15
0.12
V
R
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
–
–
–
–
0.30
0.20
0.14
0.10
Forward voltage
V
F
V
I
F
F
= 1 mA
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
–
–
–
–
–
–
–
–
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
–
–
–
–
–
–
–
–
I
= 10 mA
Single sideband noise figure
IF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
FSSB
dB
F
f= 3.0 GHz
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
–
–
–
–
6.0
6.5
6.5
7.0
–
–
–
–
f= 6.0 GHz
f= 9.3 GHz
f= 16 GHz
Differential forward resistance
rf
Ω
I
F
= 10 mA
BAT 14-020 S
BAT 14-050 S
BAT 14-090 S
BAT 14-110 S
–
–
–
–
3.5
4.0
7.0
10.0
–
–
–
–
IF
= 50 mA
Semiconductor Group
2
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