BAS78D [INFINEON]
Silicon Switching Diodes (Switching applications High breakdown voltage); 硅开关二极管（开关应用高击穿电压）
| 型号： | BAS78D |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Switching Diodes
BAS 78 A
… BAS 78 D
● Switching applications
● High breakdown voltage
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
Q62702-A910
Q62702-A911
Q62702-A912
Q62702-A913
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
BAS
78 D
BAS
78 A
BAS
78 B
BAS
78 C
Reverse voltage
V
R
50
50
100
100
200
200
400
400
V
A
Peak reverse voltage
VRM
Forward current
I
I
I
F
1
1
Peak forward current
FM
FS
Surge forward current, t = 1 µs
Total power dissipation, TS = 124 ˚C2)
Junction temperature
10
1.2
Ptot
W
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 92
≤ 22
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BAS 78 A
… BAS 78 D
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
V(BR)
V
I(BR) = 100 µA
BAS 78 A
BAS 78 B
BAS 78 C
BAS 78 D
50
–
–
–
–
–
–
–
–
100
200
400
Forward voltage1)
VF
–
–
–
–
1.6
2
I
F
= 1 A
= 2 A
IF
Reverse current
IR
µA
V
R
= VR max
= VR max,
–
–
–
–
1
50
VR
TA
= 150 ˚C
AC characteristics
Diode capacitance
C
D
–
–
10
1
–
–
pF
VR
= 0, f = 1 MHz
Reverse recovery time
t
rr
µs
I
F
= 200 mA, I
R
R
= 200 mA, R = 100 Ω
= 20 mA
L
measured at I
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 5 µs, D = 0.05
= 0.6 ns, R = 50 Ω
= V
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
V
j
t
r
p
R
+ IF × R
j
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BAS 78 A
… BAS 78 D
Forward current I
F
= f (T
A
*; TS
)
Forward current I
F
= f (V )
F
* Package mounted on epoxy
T
A
= 25 ˚C
Reverse current I
R
= f (T )
A
VCE = 10 V
Semiconductor Group
3
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