BAR50-03W [INFINEON]
Silicon PIN Diodes; 硅PIN二极管
| 型号： | BAR50-03W |
| 厂家： | 
Infineon |
| 描述： | Silicon PIN Diodes |
| 文件： | 总8页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR50...
Silicon PIN Diodes
Current-controlled RF resistor
for switching and attenuating applications
Frequency range above 10 MHz up to 6 GHz
Especially useful as antenna switch
in mobile communication
Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
Low forward resitance
Very low harmonics
BAR50-02L
BAR50-02V
BAR50-03W
BAR50-05
3
D
2
1
2
D
1
1
2
Type
Package
TSLP-2-1
SC79
SOD323
SOT23
Configuration
single,leadless
single
L (nH) Marking
S
BAR50-02L*
BAR50-02V
BAR50-03W
BAR50-05*
0.4
0.6
1.4
1.8
AB
a
single
blue A
OCs
common cathode
* Preliminary
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
50
100
V
mA
mW
Diode reverse voltage
Forward current
Total power dissipation
V
R
I
F
P
tot
BAR50-02L, T
BAR50-02V, T
BAR50-03W, T
130°C
120°C
116°C
250
250
250
250
S
S
S
BAR50-05, T
60°C
S
150
°C
Junction temperature
T
j
Operating temperature range
Storage temperature
T
-55 ... 125
-55 ... 150
T
Feb-04-2003
1
BAR50...
Thermal Resistance
Parameter
Junction - soldering point
BAR50-02L
Symbol
Value
Unit
K/W
1)
R
thJS
80
BAR50-02V
BAR50-03W
BAR50-05
120
135
360
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
-
-
-
50
Reverse current
I
nA
V
R
V = 50 V
R
0.95
1.1
Forward voltage
V
F
I = 50 mA
F
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
Feb-04-2003
2
BAR50...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
-
-
-
-
-
0.24
0.2
0.2
0.1
0.15
0.5
0.4
-
-
-
R
V = 5 V, f = 1 MHz
R
V = 0 V, f = 100 MHz
R
V = 0 V, f = 1...1.8 GHz, BAR50-02L
R
V = 0 V, f = 1...1.8 GHz, all other
R
Reverse parallel resistance
R
k
P
V = 0 V, f = 100 MHz
-
-
-
25
6
5
-
-
-
R
V = 0 V, f = 1 GHz
R
V = 0 V, f = 1.8 GHz
R
Forward resistance
r
f
I = 0.5 mA, f = 100 MHz
-
-
-
25
16.5
3
40
25
4.5
F
I = 1 mA, f = 100 MHz
F
I = 10 mA, f = 100 MHz
F
-
1100
-
ns
Charge carrier life time
rr
I = 10 mA, I = 6 mA, measured at I = 3 mA,
F
R
R
R = 100
L
I-region width
W
|S |
21
-
56
-
µm
dB
I
1)
2
Insertion loss
I = 3 mA, f = 1.8 GHz
-
-
-
-0.56
-0.4
-0.27
-
-
-
F
I = 5 mA, f = 1.8 GHz
F
I = 10 mA, f = 1.8 GHz
F
1)
2
Isolation
|S |
21
V = 0 V, f = 0.9 GHz
-
-
-
-
-24.5
-20
-18
-
-
-
-
R
V = 0 V, f = 1.8 GHz
R
V = 0 V, f = 2.45 GHz
R
V = 0 V, f = 5.6 GHz
-12
R
1BAR50-02L in series configuration,Z = 50
Feb-04-2003
3
BAR50...
Diode capacitance C = (V )
Reverse parallel resistance R = (V )
T
R
P
R
f = Parameter
f = Parameter
10 3
0.5
pF
KOhm
10 2
10 1
10 0
10 -1
0.4
0.35
0.3
1 MHz
100 MHz
1 GHz
0.25
0.2
1.8 GHz
100 MHz
1 GHz
1.8 GHz
0.15
0.1
V
V
0
2
4
6
8
10 12 14 16
20
0
2
4
6
8
10 12 14 16
20
V
V
R
R
Forward resistance r = (I )
Forward current I = (V )
F F
f
F
f = 100 MHz
T = Parameter
A
10 4
Ohm
10 0
A
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
10 3
10 2
10 1
10 0
-40 °C
25 °C
85 °C
125 °C
10 -1
10 -2
10 -1
10 0
10 1
10 2
0
0.2
0.4
0.6
0.8
1.2
mA
F
V
I
V
F
Feb-04-2003
4
BAR50...
Forward current I = (T )
Forward current I = (T )
F
S
F
S
BAR50-02L
BAR50-02V, BAR50-03W
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
°C
C°
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Forward current I = (T )
Permissible Puls Load R
= (t )
F
S
thJS p
BAR50-05
BAR50-02L
10 2
120
mA
100
90
80
70
60
50
40
30
20
10
0
mA
D = 0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
°C
0
15 30 45 60 75 90 105 120
150
T
t
p
S
Feb-04-2003
5
BAR50...
Permissible Pulse Load
Permissible Puls Load R
= (t )
thJS
p
I
/ I
= (t )
BAR50-02V
Fmax FDC
BAR50-02L
10 1
p
10 3
10 2
10 1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
mA
0.5
D = 0.5
0.2
0.1
0.05
0.02
10 0
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
t
t
p
p
Permissible Pulse Load
Permissible Puls Load R
= (t )
thJS
p
I
/ I
= (t )
BAR50-02W
Fmax FDC
BAR50-02V
10 2
p
10 3
10 2
10 1
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
D = 0.5
0.2
0.1
0.05
0.02
0.2
10 0
0.5
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Feb-04-2003
6
BAR50...
Permissible Pulse Load
/ I = (t )
Permissible Puls Load R
BAR50-03W
= (t )
thJS
p
I
Fmax FDC
p
BAR50-02W
10 2
10 3
10 2
10 1
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
D = 0.5
0.2
0.1
0.05
0.02
0.2
10 0
0.5
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Pulse Load
/ I = (t )
Permissible Puls Load R
BAR50-05
= (t )
thJS
p
I
Fmax FDC
p
BAR50-03W
10 2
10 3
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
D = 0.5
0.2
10 1
0.1
0.05
0.02
0.01
0.005
0
0.2
0.5
10 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
P
p
Feb-04-2003
7
BAR50...
2
Permissible Pulse Load
Insertion loss |S | = (f)
21
I
/ I
= (t )
I = Parameter
BAR50-02L in series configuration,Z = 50
Fmax FDC
BAR50-05
10 2
p
F
0
dB
100 mA
-0.2
10 mA
D = 0
0.05
0.02
0.01
0.5
-0.3
5 mA
10 1
-0.4
0.2
0.1
0.5
-0.5
3 mA
-0.6
-0.7
-0.8
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
0
1
2
3
4
6
s
GHz
t
f
p
2
Isolation |S | = (f)
21
V = Parameter
R
BAR50-02L in series configuration,Z = 50
0
dB
-10
-15
-20
0 V
-25
-30
1 V
10 V
GHz
0
1
2
3
4
6
f
Feb-04-2003
8
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