BAL74 [INFINEON]
Silicon Switching Diode; 硅开关二极管
| 型号： | BAL74 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Switching Diode
BAL 74
● For high-speed switching
Package1)
SOT-23
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BAL 74
JCs
Q62702-A718
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
50
V
Peak reverse voltage
Forward current
V
RM
50
IF
250
mA
A
Surge forward current, t = 1 µs
IFS
4.5
Total power dissipation, T
S
= 54 ˚C
P
tot
370
mW
˚C
Junction temperature
T
j
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 330
≤ 260
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BAL 74
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
V
(BR)
F
50
–
–
–
–
1
V
I(BR) = 100 µA
Forward voltage
= 100 mA
V
IF
Reverse current
IR
V
R
= 50 V
= 50 V, T
–
–
–
–
0.1
100
µA
µA
V
R
A
= 150 ˚C
AC characteristics
Diode capacitance
C
D
–
–
–
–
2
4
pF
ns
VR
= 0 V, f = 1 MHz
Reverse recovery time
= 10 mA, I = 10 mA, R
measured at I = 1 mA
t
rr
IF
R
L
= 100 Ω
R
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
Semiconductor Group
2
BAL 74
Forward current I
F
= f (T
A
*; TS
)
Reverse current I
R
= f (T )
A
* Package mounted on epoxy
Forward current I
F
= f (V
F
)
Peak forward current IFM = f (t)
= 25 ˚C
T
A
= 25 ˚C
TA
Semiconductor Group
3
BAL 74
Forward voltage V
F
= f (T )
A
Semiconductor Group
4
相关型号：
BAL74W
Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V
TYSEMI
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