AUIRFS8403TRR [INFINEON]
Advanced Process Technology New Ultra Low On-Resistance; 先进的工艺技术新的超低导通电阻
| 型号： | AUIRFS8403TRR |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology New Ultra Low On-Resistance |
| 文件： | 总13页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AUIRFS8403
AUIRFSL8403
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
Advanced Process Technology
D
S
VDSS
40V
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
max.
2.6mΩ
3.3mΩ
123A
G
ID
(Silicon Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
D
D
S
S
D
G
G
D2Pak
AUIRFS8403
TO-262
AUIRFSL8403
Applications
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
G
Gate
D
Drain
S
Source
DC-DC Converter
Ordering Information
Base part number
Package Type
Standard Pack
Form
Complete Part Number
Quantity
50
AUIRFSL8403
AUIRFS8403
TO-262
D2Pak
Tube
AUIRFSL8403
AUIRFS8403
Tube
50
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS8403TRL
AUIRFS8403TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
123
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
87
A
492
99
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
0.66
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
111
160
EAS (Thermally limited)
Single Pulse Avalanche Energy
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
IAR
A
See Fig. 14, 15 , 24a, 24b
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Rθ
Rθ
Junction-to-Case
–––
–––
1.52
40
JC
°C/W
Junction-to-Ambient (PCB Mount) D2 Pak
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.033 –––
Conditions
V
VGS = 0V, ID = 250μA
V(BR)DSS
V/°C Reference to 25°C, ID = 5mA
Δ
Δ
V(BR)DSS/ TJ
Ω
–––
2.2
2.6
3.0
3.3
3.9
m
VGS = 10V, ID = 70A
VDS = VGS, ID = 100μA
VDS = 40V, VGS = 0V
RDS(on)
VGS(th)
IDSS
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.6
1.0
μA
150
100
-100
–––
V
V
V
DS = 40V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
GS = 20V
IGSS
nA
GS = -20V
Ω
RG
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
gfs
Qg
269
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
62
–––
93
S
VDS = 10V, ID = 70A
ID = 70A
Total Gate Charge
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd
Turn-On Delay Time
Rise Time
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS =20V
GS = 10V
nC
20
V
Qsync
)
42
ID = 70A, VDS =0V, VGS = 10V
DD = 26V
ID = 70A
td(on)
10
V
tr
77
ns
Ω
RG =1
td(off)
Turn-Off Delay Time
Fall Time
26
tf
43
V
V
V
GS = 10V
Ciss
Input Capacitance
3183
475
331
596
688
GS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
DS = 25V
Crs s
pF ƒ = 1.0 MHz, See Fig. 5
Coss eff. (ER)
Coss eff. (TR)
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
GS = 0V, VDS = 0V to 32V , See Fig. 11
GS = 0V, VDS = 0V to 32V
V
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
–––
–––
118
472
(Body Diode)
showing the
integral reverse
A
V
G
ISM
Pulsed Source Current
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 70A, VGS = 0V
VSD
Diode Forward Voltage
–––
–––
–––
–––
–––
–––
–––
0.9
7.6
22
1.3
dv/dt
trr
Peak Diode Recovery
–––
–––
–––
–––
–––
–––
V/ns TJ = 175°C, IS = 70A, VDS = 40V
Reverse Recovery Time
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
IF = 70A
di/dt = 100A/μs
ns
24
Qrr
Reverse Recovery Charge
Reverse Recovery Current
15
nC
A
15
IRRM
1.0
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50Ω,
IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 1174A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L=0.046mH, RG = 50Ω, IAS = 70A, VGS =10V.
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS
.
2
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60μs
Tj = 25°C
PULSE WIDTH
≤
60μs
Tj = 175°C
PULSE WIDTH
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.2
1.8
1.4
1.0
0.6
I
= 70A
D
V
= 10V
GS
T
= 175°C
J
T = 25°C
J
1
V
= 10V
DS
≤60μs PULSE WIDTH
0.1
2
4
6
8
10
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 70A
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
V
V
= 32V
= 20V
DS
DS
= C + C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
10 20 30 40 50 60 70 80
0.1
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com © 2013 International Rectifier
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
May 08 2013
AUIRFS/SL8403
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
T
= 25°C
J
DC
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
50
49
48
47
46
45
44
43
42
41
40
125
100
75
50
25
0
Id = 5.0mA
-60
-20
20
60
100
140
180
25
50
75
100
125
150
175
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
0.6
0.5
0.4
0.3
0.2
0.1
0.0
500
I
V
= 0V to 32V
D
DS
450
400
350
300
250
200
150
100
50
TOP
12A
23A
BOTTOM 70A
0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
J
DS,
Fig 11. Typical COSS Stored Energy
www.irf.com © 2013 International Rectifier
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
May 08 2013
AUIRFS/SL8403
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart = 25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
120
80
40
0
TOP
BOTTOM 1.0% Duty Cycle
= 70A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com © 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
4.5
3.5
2.5
1.5
0.5
8
6
4
2
0
I
= 70A
D
T
T
= 125°C
J
J
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
= 25°C
-75
-25
T
25
75
125
175
225
2
4
6
8
10 12 14 16 18 20
, Temperature ( °C )
J
V
Gate -to -Source Voltage (V)
GS,
Fig 16. On-Resistance vs. Gate Voltage
Fig 17. Threshold Voltage vs. Temperature
6
70
I = 46A
F
I = 46A
F
V
= 34V
60
50
40
30
20
10
0
V
= 34V
R
5
4
3
2
1
0
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
60
50
40
30
20
10
0
5
I = 70A
F
I = 70A
F
V
= 34V
V
= 34V
R
R
4
3
2
1
0
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 21 - Typical Stored Charge vs. dif/dt
May 08 2013
Fig. 20 - Typical Recovery Current vs. dif/dt
www.irf.com © 2013 International Rectifier
6
AUIRFS/SL8403
20.0
15.0
10.0
5.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.0
0
100
200
300
400
500
I , Drain Current (A)
D
Fig 22. Typical On-Resistance vs. Drain Current
7
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 24b. Unclamped Inductive Waveforms
Fig 24a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 25a. Switching Time Test Circuit
Fig 25b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 26a. Gate Charge Test Circuit
www.irf.com © 2013 International Rectifier
Fig 26b. Gate Charge Waveform
8
May 08 2013
AUIRFS/SL8403
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUIRFS8403
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
www.irf.com
© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PartNumber
AUIRFSL8403
DateCode
Y= Year
WW= Work Week
IRLogo
YWWA
A= Automotive, Lead Free
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive level.
3L-D2 PAK
MSL1
Moisture Sensitivity Level
3L-TO-262-PAK
N/A
Class M4 (+/- 600)††
Machine Model
AEC-Q101-002
Class H1C (+/- 2000)††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000)††
AEC-Q101-005
Charged Device Model
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Highest passing voltage.
12
www.irf.com
© 2013 International Rectifier
May 08 2013
AUIRFS/SL8403
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at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
13
www.irf.com
© 2013 International Rectifier
May 08 2013
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