AUIRFS4010TRR [INFINEON]
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| 型号： | AUIRFS4010TRR |
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Infineon |
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PD - 96396A
AUTOMOTIVE GRADE
AUIRFS4010
Features
AUIRFSL4010
l
Advanced Process Technology
UltraLowOn-Resistance
HEXFET® Power MOSFET
l
l
l
l
l
l
D
S
175°COperatingTemperature
Fast Switching
VDSS
RDS(on) typ.
100V
3.9m
4.7m
180A
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
G
max.
ID
Description
D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
siliconarea. Additionalfeaturesofthisdesign area175°C
junctionoperatingtemperature, fastswitchingspeedand
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
S
D
G
G
D2Pak
AUIRFS4010
TO-262
AUIRFSL4010
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)
is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
180
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
127
A
720
PD @TC = 25°C
375
W
Maximum Power Dissipation
Linear Derating Factor
2.5
W/°C
V
VGS
EAS
IAR
± 20
318
Gate-to-Source Voltage
mJ
A
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
See Fig. 14, 15, 22a, 22b
EAR
mJ
Repetitive Avalanche Energy
Peak Diode Recovery
31
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Parameter
Typ.
–––
Max.
0.40
40
Units
RθJC
Junction-to-Case
°C/W
Rθ
–––
Junction-to-Ambient (PCB Mount)
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRFS/SL4010
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
100 ––– –––
––– 0.10 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
V
/ T
(BR)DSS Δ
Δ
J
RDS(on)
–––
2.0
3.9
4.7
4.0
VGS = 10V, ID = 106A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 106A
m
V
Ω
VGS(th)
–––
gfs
RG
IDSS
Forward Transconductance
189 ––– –––
S
Internal Gate Resistance
Drain-to-Source Leakage Current
–––
2.0
–––
20
Ω
––– –––
V
V
DS = 100V, VGS = 0V
μA
––– ––– 250
––– ––– 100
––– ––– -100
DS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
GS = -20V
nA
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Total Gate Charge
Min. Typ. Max. Units
––– 143 215
Conditions
Qg
ID = 106A
DS = 50V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
38
50
93
21
86
–––
–––
–––
–––
–––
V
nC
Qgd
Qsync
ID = 106A, VDS =0V, VGS = 10V
VDD = 65V
td(on)
tr
ID = 106A
ns
td(off)
Turn-Off Delay Time
Fall Time
––– 100 –––
––– 77 –––
R = 2.7
Ω
G
VGS = 10V
tf
Ciss
Input Capacitance
––– 9575 –––
––– 660 –––
––– 270 –––
––– 757 –––
––– 1112 –––
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 50V
Crss
ƒ = 1.0MHz See Fig.5
pF
Coss eff. (ER)
Coss eff. (TR)
V
V
GS = 0V, VDS = 0V to 80V See Fig.11
GS = 0V, VDS = 0V to 80V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
––– ––– 180
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 720
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
V
TJ = 25°C, IS = 106A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
–––
–––
72
81
ns
IF = 106A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
––– 210 –––
––– 268 –––
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
5.3
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.057mH
RG = 25Ω, IAS = 106A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 106A, di/dt ≤ 1319A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
2
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AUIRFS/SL4010
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part
number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
N/A
3L-D2 PAK
3L-TO-262
Moisture Sensitivity Level
Class M4(+/- 800V )†††
Machine Model
(per AEC-Q101-002)
Class H3A(+/- 6000V )†††
(per AEC-Q101-001)
ESD
Human Body Model
Class C5(+/- 2000V )†††
(per AEC-Q101-005)
Charged Device Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRFS/SL4010
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
TOP
TOP
100
10
1
BOTTOM
BOTTOM
60μs PULSE WIDTH
Tj = 25°C
≤
60μs PULSE WIDTH
Tj = 175°C
≤
4.0V
4.0V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 106A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
= 50V
J
1
V
DS
≤60μs PULSE WIDTH
0.1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
I = 106A
D
= C
12.0
rss
oss
gd
V
V
= 80V
= 50V
DS
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
1000
0
25 50 75 100 125 150 175 200 225
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFS/SL4010
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100μsec
10msec
T
= 25°C
J
DC
1
Tc = 25°C
Tj = 175°C
V
= 0V
GS
Single Pulse
0.1
1.0
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
130
125
120
115
110
105
100
95
200
Id = 5mA
180
160
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100120140160180
25
50
75
100
125
150
175
T , Temperature ( °C )
J
Fig 10. Drain-to-Source Breakdown Voltage
T
, Case Temperature (°C)
C
Fig 9. Maximum Drain Current vs.
Case Temperature
4.0
1400
I
D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1200
1000
800
600
400
200
0
TOP
12.5A
17A
BOTTOM 106A
0
20
V
40
60
80
100
120
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Drain-to-Source Voltage (V)
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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5
AUIRFS/SL4010
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
0.17537
0.000343
J τJ
τ
τ
Cτ
1 τ1
Ci= τi/Ri
τ
0.22547
0.006073
2τ2
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 106A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFS/SL4010
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
35
30
25
20
15
10
5
I = 70A
F
V
= 85V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/μs)
J
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
1100
35
I = 70A
I = 106A
F
F
1000
900
800
700
600
500
400
300
200
100
V
= 85V
30
25
20
15
10
5
V
= 85V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
1100
I = 106A
F
V
1000
900
800
700
600
500
400
300
200
= 85V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRFS/SL4010
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRFS/SL4010
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
PartNumber
AUFS4010
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
AUIRFS/SL4010
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PartNumber
AUFSL4010
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL4010
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
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11
AUIRFS/SL4010
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRFSL4010
AUIRFS4010
TO-262
D2Pak
Tube
Tube
50
50
AUIRFSL4010
AUIRFS4010
Tape and Reel Left
Tape and Reel Right
800
800
AUIRFS4010TRL
AUIRFS4010TRR
12
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AUIRFS/SL4010
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
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IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
www.irf.com
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