AUIRFR3710ZTRL [INFINEON]
HEXFET® Power MOSFET; HEXFET㈢功率MOSFET型号: | AUIRFR3710ZTRL |
厂家: | Infineon |
描述: | HEXFET® Power MOSFET |
文件: | 总13页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97451
AUTOMOTIVE GRADE
AUIRFR3710Z
HEXFET® Power MOSFET
Features
D
V(BR)DSS
100V
l
l
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
RDS(on) max.
18m
Ω
G
ID (Silicon Limited)
ID (Package Limited)
56A
42A
S
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive appli-
cations and a wide variety of other applications.
S
G
D-Pak
AUIRFR3710Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
56
I
I
I
I
@ T = 25°C
C
D
D
D
Continuous Drain Current, VGS @ 10V
39
@ T = 100°C
A
C
Continuous Drain Current, VGS @ 10V (Package Limited)
42
@ T = 25°C
C
220
Pulsed Drain Current
DM
140
Power Dissipation
@T = 25°C
C
W
W/°C
V
P
D
0.95
Linear Derating Factor
± 20
Gate-to-Source Voltage
V
GS
EAS
150
200
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (tested )
IAR
EAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
300
T
T
J
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
°C
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
1.05
50
Units
Rθ
JC
Rθ
JA
Rθ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
°C/W
–––
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/10/2010
AUIRFR3710Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
V
∆
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.088 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
15
18
4.0
–––
20
V
GS = 10V, ID = 33A
VDS = VGS, ID = 250µA
DS = 25V, ID = 33A
µA VDS = 100V, VGS = 0V
–––
–––
–––
–––
–––
V
gfs
IDSS
Forward Transconductance
39
S
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
250
200
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
––– -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
69
15
25
14
43
53
42
4.5
100
–––
–––
–––
–––
–––
–––
–––
ID = 33A
DS = 80V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
V
VGS = 10V
VDD = 50V
ID = 33A
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
ns
R
G = 6.8
VGS = 10V
Between lead,
LD
D
S
Internal Drain Inductance
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 2930 –––
Output Capacitance
–––
–––
290
180
–––
–––
V
Reverse Transfer Capacitance
Output Capacitance
––– 1200 –––
Output Capacitance
–––
–––
180
430
–––
–––
V
GS = 0V, VDS = 80V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 80V
Coss eff.
Effective Output Capacitance
V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
56
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
220
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
35
1.3
53
62
V
T = 25°C, I = 33A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 33A, VDD = 50V
J F
rr
di/dt = 100A/µs
Q
t
41
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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AUIRFR3710Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
D-PAK
MSL1
Machine Model
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
Human Body Model
ESD
Charged Device
Model
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR3710Z
1000
1000
100
10
VGS
VGS
15V
TOP
15V
TOP
10V
10V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
6.0V
5.0V
4.8V
4.5V
4.3V
4.0V
BOTTOM
BOTTOM
100
10
1
4.0V
1
4.0V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
100
80
60
40
20
0
T
= 25°C
T
= 175°C
J
J
T
= 175°C
J
T = 25°C
J
V
= 25V
DS
V
= 10V
DS
60µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
0
10 20 30 40 50 60 70 80
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRFR3710Z
100000
10000
1000
100
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 33A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
ds
gd
C
C
iss
6.0
oss
rss
4.0
C
2.0
10
0.0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.10
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
nce
Forward Voltage
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5
AUIRFR3710Z
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
0
I
= 56A
D
V
= 10V
GS
Limited By Package
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
R1
τ
J τJ
τ
τ
Cτ
0.576
0.249
0.224
0.000540
0.001424
0.007998
τ
1τ1
τ
0.01
2 τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR3710Z
15V
700
600
500
400
300
200
100
0
I
D
TOP
3.4A
4.8A
DRIVER
+
L
V
DS
BOTTOM 33A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
Charge
I
= 250µA
Fig 13a. Basic Gate Charge Waveform
D
L
VCC
DUT
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
1K
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRFR3710Z
1000
Duty Cycle = Single Pulse
100
10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
∆
assuming
Tj = 25°C due to
avalanche losses
0.05
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 1% Duty Cycle
= 33A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
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AUIRFR3710Z
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRFR3710Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AUFR3710Z
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR3710Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
typical repetitive avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.28mH
This value determined from sample failure population, starting
TJ = 25°C, L = 0.28mH, RG = 25Ω, IAS = 33A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
RG = 25Ω, IAS = 33A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at TJ approximately 90°C.
θ
from 0 to 80% VDSS
.
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11
AUIRFR3710Z
Ordering Information
Base part
Package Type
Standard Pack
Form
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR3710Z
Dpak
Tube
AUIRFR3710Z
AUIRFR3710ZTR
AUIRFR3710ZTRL
AUIRFR3710ZTRR
Tape and Reel
Tape and Reel Left
Tape and Reel Right
12
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AUIRFR3710Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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13
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