AUIRFR120Z [INFINEON]
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3;
| 型号： | AUIRFR120Z |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96345
AUIRFR120Z
AUIRFU120Z
AUTOMOTIVE MOSFET
HEXFET® Power MOSFET
Features
D
V(BR)DSS
RDS(on) typ.
max.
100V
l
l
l
l
l
l
l
AdvancedProcessTechnology
UltraLowOn-Resistance
175°COperatingTemperature
FastSwitching
150m
190m
8.7A
Ω
Ω
G
RepetitiveAvalancheAlloweduptoTjmax
Lead-Free,RoHSCompliant
AutomotiveQualified*
S
ID
D
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
siliconarea. Additionalfeaturesofthisdesign area175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliabledeviceforuseinAutomotiveapplicationsandawide
varietyofotherapplications.
S
S
D
D
G
G
D-Pak
I-Pak
AUIRFU120Z
AUIRFR120Z
G
Gate
D
Drain
S
Source
AbsoluteMaximumRatings
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. These
arestressratingsonly;andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedin
thespecificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevice
reliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.
Ambienttemperature(TA)is25°C, unlessotherwisespecified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
8.7
Units
I
I
I
@ T = 25°C
C
D
D
6.1
A
@ T = 100°C
C
35
DM
35
Power Dissipation
@T = 25°C
C
W
W/°C
V
P
D
0.23
Linear Derating Factor
± 20
Gate-to-Source Voltage
V
GS
EAS
18
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
EAS (Tested )
20
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
T
T
J
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
°C
STG
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
4.28
50
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
AUIRFR/U120Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
V
∆
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.084 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
150
–––
–––
–––
–––
–––
–––
190
4.0
VGS = 10V, ID = 5.2A
VDS = VGS, ID = 25µA
VDS = 25V, ID = 5.2A
V
gfs
Forward Transconductance
16
–––
20
S
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA
V
DS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
GS = -20V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
6.9
1.6
3.1
8.3
26
10
ID = 5.2A
–––
–––
–––
–––
–––
–––
–––
nC
ns
VDS = 80V
VGS = 10V
VDD = 50V
ID = 5.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
27
RG = 53 Ω
VGS = 10V
23
LD
Internal Drain Inductance
4.5
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
–––
–––
–––
–––
–––
–––
310
41
–––
–––
–––
–––
–––
–––
Output Capacitance
V
Reverse Transfer Capacitance
Output Capacitance
24
150
26
Output Capacitance
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 80V
Coss eff.
Effective Output Capacitance
57
V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
8.7
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
35
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
24
1.3
36
35
V
T = 25°C, I = 5.2A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 5.2A, VDD = 50V
J F
rr
di/dt = 100A/µs
Q
t
23
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes through are on page 3
2
www.irf.com
AUIRFR/U120Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments:
This part number(s) passed
Qualification Level
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
D PAK
I-PAK
Moisture Sensitivity Level
N/A
Machine Model
Class M1B (100V)
( per AEC-Q101-002)
Class H0 (100V)
(per AEC-Q101-001)
Class C5 (2000V)
AEC-Q101-005
Yes
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 1.29mH
RG = 25Ω, IAS = 5.2A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
.
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
www.irf.com
3
AUIRFR/U120Z
100
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10
1
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
0.1
0.01
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
1
10
1
100
1
0.1
1
1
10
1
100
1
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
100.0
10.0
1.0
T
= 175°C
= 25°C
J
10
8
T
= 175°C
J
T
J
6
T
= 25°C
4
J
V
= 25V
2
DS
60µs PULSE WIDTH
V
= 10V
DS
380µs PULSE WIDTH
0.1
0
4.0
5.0
6.0
7.0
8.0
0
2
4
6
8
V
, Gate-to-Source Voltage (V)
GS
I
Drain-to-Source Current (A)
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. DrainCurrent
4
www.irf.com
AUIRFR/U120Z
500
400
300
200
100
0
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 5.2A
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
V
= 80V
= C
DS
rss
oss
gd
VDS= 50V
VDS= 20V
= C + C
ds
gd
Ciss
4
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8
10
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
V
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
= 0V
GS
10msec
0.1
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
V
, Drain-toSource Voltage (V)
V
SD
, Source-toDrain Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5
AUIRFR/U120Z
10
3.0
2.5
2.0
1.5
1.0
0.5
I
= 5.2A
D
V
= 10V
GS
8
6
4
2
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Junction Temperature (°C)
, Junction Temperature (°C)
J
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.33747 0.000053
τ
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
1.793
2.150
0.000125
0.000474
0.02
0.01
0.1
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
, Rectangular Pulse Duration (sec)
0.001
0.01
t
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRFR/U120Z
80
60
40
20
0
15V
I
D
TOP
0.9A
1.2
5.2A
DRIVER
+
L
BOTTOM
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
5.0
4.0
3.0
2.0
GS
GD
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250µA
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
V
GS
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
www.irf.com
7
AUIRFR/U120Z
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
20
16
12
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
TOP
BOTTOM 1% Duty Cycle
= 5.2A
Single Pulse
I
D
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
4
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
www.irf.com
AUIRFR/U120Z
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRFR/U120Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUFR120Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRFR/U120Z
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUFU120Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRFR/U120Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
12
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AUIRFR/U120Z
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
75
AUIRFR120Z
DPak
IPak
Tube
AUIRFR120Z
AUIRFR120ZTR
AUIRFR120ZTRL
AUIRFR120ZTRR
AUIRFU120Z
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
2000
3000
3000
75
AUIRFU120Z
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13
AUIRFR/U120Z
IMPORTANTNOTICE
Unlessspecificallydesignatedfortheautomotivemarket,InternationalRectifierCorporationanditssubsidiaries(IR)reserve
therighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservices
atanytimeandtodiscontinueanyproductorserviceswithoutnotice. Partnumbersdesignatedwiththe“AU”prefixfollow
automotiveindustryand/orcustomerspecificrequirementswithregardstoproductdiscontinuanceandprocesschange
notification.AllproductsaresoldsubjecttoIR’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.
IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithIR’s
standardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupportthis
warranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarily
performed.
IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproducts
andapplicationsusingIRcomponents.Tominimizetheriskswithcustomerproductsandapplications,customersshould
provideadequatedesignandoperatingsafeguards.
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thebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailureoftheIRproduct
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14
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INFINEON
AUIRFR2407
Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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