AUIPS6121R [INFINEON]
CURRENT SENSE HIGH SIDE SWITCH;
| 型号： | AUIPS6121R |
| 厂家： | 
Infineon |
| 描述： | CURRENT SENSE HIGH SIDE SWITCH |
| 文件： | 总15页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Automotive grade
AUIPS6121R
CURRENT SENSE HIGH SIDE SWITCH
Features
Product Summary
Suitable for 12V systems
Over current shutdown
Over temperature shutdown
Current sensing
Active clamp
Low current
Reverse battery
ESD protection
Optimized Turn On/Off for EMI
Rds(on)
Vclamp
Current shutdown 65A min.
5.8m max.
39V typ.
Package
Applications
Glow plug
PTC
Description
The AUIPS6121R is a fully protected four terminal high
side switch. It features current sensing, over-current, over-
temperature, ESD protection and drain to source active
clamp. Shutdown type of protection provides a good
reliability under short circuit condition. The Ifb pin provides
both an analog feedback during normal operation and a
digital flag when the part is in protection mode.
DPak – 5Leads
Ordering Information
Standard Pack
Form
Base Part Number
Package Type
Complete Part Number
Quantity
75
Tube
Tape and reel left
AUIPS6121R
AUIPS6121R
D-Pak-5-Leads
3000
AUIPS6121RTRL
1
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Typical Connection
Vcc
In
Ifb
AUIPS6121R
Battery
Out
Current feedback
Input
10k
*
Load
Rifb
On
Off
Logic
Ground
Power
Ground
* The diode on the bipolaire NPN is necessary for reverse battery protection.
2
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (Tambient=25°C unless
otherwise specified).
Symbol
Vout
Parameter
Maximum output voltage
Min. Max. Units
Vcc-39 Vcc+0.3
V
Vcc-Vin max. Maximum Vcc voltage
Iifb, max.
Vcc sc
-18
-50
39
10
22
Maximum feedback current
mA
V
Maximum Vcc voltage with short circuit protection see page 7
Maximum power dissipation (internally limited by thermal protection)
Rth=50°C/W Dpack 6cm² footprint
Max. operating junction temperature
Max. storage junction temperature
Pd
W
-40
-55
2.5
150
150
Tj max.
°C
Thermal Characteristics
Symbol
Rth1
Parameter
Typ. Max. Units
Thermal resistance junction to ambient Dpak Std footprint
Thermal resistance junction to ambient Dpak 6cm² footprint
Thermal resistance junction to case Dpak
70
50
1.2
Rth2
Rth3
°C/W
Recommended Operating Conditions
These values are given for a quick design.
Symbol
Parameter
Min. Max. Units
Iout
Continuous output current, Tambient=85°C, Tj=150°C
12
50
A
Rth=50°C/W, Dpak 6cm² footprint
F
Maximum frequency
Hz
3
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Static Electrical Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified)
Symbol
Vcc op.
Rds(on)
Parameter
Min. Typ. Max. Units Test Conditions
4.8
7.5
1
Operating voltage range
ON state resistance Tj=25°C
ON state resistance Tj=150°C (2)
Supply leakage current
5.8
1
37
4.5
4
35
5.8
9
3
3
V
Ids=10A
m
Icc off
Iout off
Iin on
V clamp
Vih(1)
Vil(1)
Vin=Vcc=14V,Vifb=Vgnd
Vout=Vgnd, Tj=25°C
Vcc-Vin=14V
µA
Output leakage current
1
Input current when device on
Vcc to Vout clamp voltage
High level Input threshold voltage
Low level Input threshold voltage
2.7
39
5.4
5
6
mA
44
6.2
5.8
8
0.9
0.8
300
V
Id=20mA
Rds(on) rev Reverse On state resistance Tj=25°C
Isd=10A, Vin-Vcc>8V
If=10A
6
m
V
Forward body diode voltage Tj=25°C
Forward body diode voltage Tj=125°C
Input resistor
0.8
0.6
200
Vf
Rin
115
Built-in resistor
(1) Input thresholds are measured directly between the input pin and the tab.
(2) Guaranteed by design
Switching Electrical Characteristics
Vcc=14V, Resistive load=1, Tj=25°C
Symbol
Tdon
Tr
Tdoff
Tf
Parameter
Turn on delay time
Rise time from 20% to 80% of Vcc
Turn off delay time
Fall time from 80% to 20% of Vcc
Min. Typ. Max. Units Test Conditions
20
15
20
15
50
35
100
35
150
100
250
100
µs
See fig. 1
Protection Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified)
Symbol
Tsd
Isd
Parameter
Over temperature threshold(2)
Over-current shutdown
Ifb after an over-current or an over-
temperature (latched)
Over-voltage protection
Time to reset Psd
Time to shutdown when Vcc-Out=UV (3)
Min. Typ. Max. Units
Test Conditions
See fig. 3
150
165
°C
65
90
120
A
I fault
15
20
27
mA
V
OV
Psd rst
Psd_UV
18
12
0.3
20
26
0.7
22
60
2
Vcc-Vin
ms
(3) See explanation page 8
Current Sensing Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified), Vcc-Vifb>3.5V
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
Iload=60A at Vcc=14V,
Iload=30A at Vcc=6V,
after 1.5ms,See page 7
Ratio@-40°/Ratio@25°
Ratio@125°/Ratio@25°
After 1.5ms
Ratio
I load / Ifb current ratio
5000 6300
7600
Ratio_Cold
Ratio_Hot
I offset
Ratio drift between 25°C to -40°C
Ratio drift between 25°C to 125°C
Load current offset
-6.6
-1.6
-0.15
0
-2.2
3
0
2.1
7.7
0.15
25
%
A
µA
Ifb leakage
Ifb leakage current
0.5
Iout=0A, Vcc-Vin=14V
4
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Lead Assignments
3- Vcc
1- In
2- Ifb
3- Vcc
4- Out
5- Out
1 2 4 5
DPak
Functional Block Diagram
All values are typical
VCC
Charge
Pump
Vih=5.4V
36V
75V
2.7mA
75V
Vcc-Vin<OV
+
-
Driver
40V
Reset
LatchQ
Set
Reverse
Battery
Protection
Iout> 90A
Tj> 165°C
Diag
-
+
Over power
shut down
IN
IFB OUT
5
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Truth Table
Op. Conditions
Normal mode
Normal mode
Open load
Input
H
L
H
L
H
L
H
L
Output
Ifb pin voltage
L
H
L
H
L
L
L
L
0V
I load x Rfb / Ratio
0V
Ifb leakage x Rifb
0V
I fault x Rifb(latched)
0V
I fault x Rifb (latched)
Open load
Short circuit to GND
Short circuit to GND
Over temperature
Over temperature
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor.
Power dissipation in the IPS : P = Rdson rev * I load² + Vcc² / 200ohm ( internal input resistor ).
If the power dissipation is too high in Rifb, a diode in serial can be added to block the current.
Active clamp
The purpose of the active clamp is to limit the voltage across the MOSFET to a value below the body diode break down
voltage to reduce the amount of stress on the device during switching.
The temperature increase during active clamp can be estimated as follows:
Tj PCL ZTH(tCLAMP
)
Where:
is the thermal impedance at tCLAMP and can be read from the thermal impedance curves given in the
)
ZTH(tCLAMP
data sheets.
: Power dissipation during active clamp
PCL VCL ICLavg
: Typical VCLAMP value
VCL 39V
ICL
: Average current during active clamp
: Active clamp duration
ICLavg
2
ICL
tCL
di
dt
VBattery VCL
di
dt
: Demagnetization current
L
Figure 9 gives the maximum inductance versus the load current in the worst case: the part switches off after an over
temperature detection. If the load inductance exceeds the curve, a freewheeling diode is required.
Over-current protection
The threshold of the over-current protection is set in order to guarantee that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection.
6
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Current sensing accuracy
Ifb
Ifb2
Ifb1
Ifb leakage
I offset
Iout1
Iout2
Iout
The current sensing is specified by measuring 3 points :
- Ifb1 for Iout1
- Ifb2 for Iout2
- Ifb leakage for Iout=0
The parameters in the datasheet are computed with the following formula :
Ratio = ( Iout2 – Iout1 )/( Ifb2 – Ifb1)
I offset = Ifb1 x Ratio – Iout1
This allows the designer to evaluate the Ifb for any Iout value using :
Ifb = ( Iout + I offset ) / Ratio if Ifb>Ifb leakage
For some applications, a calibration is required. In that case, the accuracy of the system will depends on the variation of
the I offset and the ratio over the temperature range. The ratio variation is given by Ratio_Hot and Ratio_Cold specified in
page 4.
The Ioffset variation depends directly on the Rdson:
I offset@-40°C= I offset@25°C / 0.8
I offset@150°C= I offset@25°C / 1.9
Maximum Vcc voltage with short circuit protection
The maximum Vcc voltage with short circuit is the maximum voltage for which the part is able to protect itself under test
conditions representative of the application. 2 kind of short circuits are considered: terminal and load short circuit.
L supply R supply
5µH 10mohm
Vcc
Out
L SC
0.1 µH
L supply + L SC = 5 µH
R SC
10 mohm
100 mohm
IPS
TerminalSC
LoadSC
L SC
R SC
7
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Over power shut down protection
The AUIPS6121R integrates an over-power protection in order to limit the thermal stress in the mosfet during certain
conditions like overload or under voltage. The power is measured by monitoring the voltage between Vcc and Source.
The device latches more quickly when the power is higher.
40
35
30
25
20
15
10
5
VCC
Vref
Vrc
C
R
Psd_UV
+
-
When Vrc>Vref:
The device latches
Current proportional
of Vds value
0
OUT
0
1
2
3
4
Over power shut down time (ms)
When the device is latched: VRC is discharge with an internal constant (Psd rst).
Typical in low voltage condition with a short circuit on the output, the voltage on the Vcc pin will oscillate around the under
voltage protection and the 'over-current shut down' will not be triggered.
The 'Over power shut down' protection will turn off the part after the time ‘Psd_UV' for preventing thermal stress of the
device.
Vin-Gnd
R
L
Vcc - Out
Isdf
Vin
Vcc
IN
AUIPS6121R
Battery
Ifb
Out
Current feedback
10k
Iout
Input
On
Rifb
Logic
Ground
Power
Ground
Off
Psd_UV
Ifault
Ifb
8
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T clamp
Vcc-Vin
Ids
80%
Vcc-Vin
20%
80%
Vcc
Vout
20%
Vds
Td on
Td off
Vds clamp
Tr
Tf
See Application Notes to evaluate power dissipation
Figure 2 – Active clamp waveforms
Figure 1 – IN rise time & switching definitions
30
25
20
15
10
5
Vin
Ids
I shutdown
Tj
Tsd
165°C
Tshutdown
V fault
Vifb
0
-50
0
50
100
150
Tj, junction temperature (°C)
Figure 3 – Protection timing diagram
Figure 4 – Icc off (µA) VsTj (°C)
9
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6
5
4
3
2
1
0
6
5
4
3
2
1
0
VIH
VIL
0
10
20
30
-50 -25
0
25
50
75 100 125 150
Vcc-Vin, supply voltage (V)
Tj, junction temperature (°C)
Figure 5 – Icc off (µA) VsVcc-Vin (V)
Figure 6 – Vih and Vil (V) VsTj (°C)
100
10
200%
150%
100%
50%
1
0.1
0.01
1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3
-50
0
50
100
150
Tj, junction temperature (°C)
Time (s)
Figure 7 - Normalized Rds(on) (%) Vs Tj (°C)
Figure 8 – Transient thermal impedance (°C/W)
Vs time (s)
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100
10
100
10
1
1
0.1
0.01
0.001
0.0001
'-40°C
'+25°C
'+125°C
0
10
20
30
40
50
60
70
80
90
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Inductance (mH)
Iout, output current (A)
Figure 10 – Tsd (s) Vs I out (A)
Figure 9 – Max. Iout (A) Vs inductance (mH)
SMD with 6cm²
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Case Outline 5 Lead – DPAK
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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Tape & Reel 5 Lead – DPAK
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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Part Marking Information
†
Qualification Information
Automotive
(per AEC-Q100)
Qualification Level
Comments: This family of ICs has passed an Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by extension
of the higher Automotive level.
MSL2,260°C
DPAK-5L
Moisture Sensitivity Level
(per IPC/JEDEC J-STD-020)
Class M3 (+/-300V)
(per AEC-Q100-003)
Class 2 (+/-3000V)
Machine Model
ESD
Human Body Model
Charged Device Model
(
)
per AEC-Q100-002
Class C6 (+/-1000V)
(per AEC-Q100-011)
Class II
IC Latch-Up Test
RoHS Compliant
(per AEC-Q100-004)
Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
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IMPORTANT NOTICE
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services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
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acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
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WORLD HEADQUARTERS:
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Tel: (310) 252-7105
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