AIMW120R045M1 [INFINEON]

碳化硅 MOSFET 单管;


型号：	AIMW120R045M1
厂家：	Infineon
描述：	碳化硅 MOSFET 单管
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中文：	中文翻译
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AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Silicon Carbide MOSFET

Features



Revolutionary semiconductor material - Silicon Carbide

Very low switching losses

Threshold-free on state characteristic

IGBT-compatible driving voltage (15V for turn-on)

0V turn-off gate voltage

Benchmark gate threshold voltage, V_GS(th)=4.5V

Fully controllable dv/dt

Commutation robust body diode, ready for synchronous rectification

Temperature independent turn-off switching losses

Benefits



Efficiency improvement

Enabling higher frequency

Increased power density

Cooling effort reduction

Reduction of system complexity and cost

Potential Applications



On-board Charger/PFC

Booster/DC-DC Converter

Auxilliary Inverter

Product Validation

Qualified for Automotive Applications. Product Validation according to AEC-Q100/101”

Table 1

Type

Key Performance and Package Parameters

R_DS(on),typ

(T_vj=25°C, I_D=20A,

V_GS=15V)

)

I_D

V_DS

T_vjmax

Marking

Package

SP Number

(T_C=25°C,

R_th(j-c,max)

AIMW120R045M1 1200V

52A

45mΩ

175°C

A120M1045

SP002472666 PG-TO247-3-41

Datasheet

Please read the Important Notice and Warnings at the end of this document

V3.0

www.infineon.com/sic

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Table of contents

Features

Benefits

Potential Applications..................................................................................................................... 1

Product Validation.......................................................................................................................... 1

Table of contents............................................................................................................................ 2

Maximum ratings........................................................................................................... 3

Thermal resistances....................................................................................................... 4

Electrical Characteristics................................................................................................ 5

Static characteristics...............................................................................................................................5

Dynamic characteristics..........................................................................................................................6

Switching characteristics........................................................................................................................7

3.1

3.2

3.3

Electrical characteristic diagrams.................................................................................... 8

Package drawing ..........................................................................................................14

Test conditions.............................................................................................................15

Revision History ............................................................................................................................16

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Maximum ratings

Stress above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may

affect device reliability.

Table 2

Maximum ratings¹

Parameter

Symbol

Value

Unit

Drain-source voltage, T_vj≥ 25°C

V_DSS

1200

DC drain current for R_th(j-c,max), limited by T_vjmax, V_GS=15V

T_C= 25°C

T_C= 100°C

I_D

Pulsed drain current, t_plimited by T_vjmax, V_GS= 15V

I_D,pulse

130

DC body diode forward current for R_th(j-c,max), limited by

T_vjmax, V_GS=0V

T_C= 25°C

I_SD

T_C= 100°C

Pulsed body diode current, t_plimited by T_vjmax

Gate-source voltage²

Max transient voltage, < 1% duty cycle

Recommended turn-on gate voltage

Recommended turn-off gate voltage

Power dissipation, limited by T_vjmax

T_C= 25°C

I_SD,pulse

130

V_GSS

V_GSS,on

V_GSS,off

-7… 20

P_tot

228

114

T_C=100°C

°C

Virtual junction temperature

Storage temperature

T_vj

-40…175

-55…150

T_stg

Soldering temperature,

wavesoldering only allowed at leads,

1.6mm (0.063 in.) from case for 10 s

Mounting torque, M3 screw

T_sold

260

0.6

°C

Maximum of mounting processes: 3

¹Not subject to production test. Parameter verified by design/characterization.

Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior

of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure

sound operation of the device over the planned lifetime.

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Thermal resistances

Table 3

Thermal resistances¹

Value

min.

Parameter

Symbol Conditions

Unit

K/W

typ.

max.

MOSFET/body diode

thermal resistance,

junction – case

R_th(j-c)

0.51

0.66

Thermal resistance,

junction – ambient

R_th(j-a)

leaded

¹Not subject to production test. Parameter verified by design/characterization.

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical Characteristics

3.1

Static characteristics

Table 4

Parameter

Static characteristics (at T_vj=25°C, unless otherwise specified)

Value

Symbol Conditions

min.

Unit

typ.

max.

Drain-source on-state

resistance²

V_GS=15V, I_D=20A,

T_vj= 25°C

T_vj= 100°C

T_vj= 175°C

V_GS= 0V, I_SD=20A

T_vj= 25°C

R_DS(on)

mΩ

4.1

4.0

3.9

5.2

Body Diode forward voltage V_SD

T_vj=100°C

T_vj=175°C

(tested after 1 ms pulse at

V_GS=+20 V)

I_D= 10mA, V_DS= V_GS

T_vj= 25°C

Gate-source threshold

V_GS(th)

voltage²

3.5

4.5

3.6

5.7

T_vj=175°C

V_GS= 0V, V_DS= 1200V

T_vj=25°C

T_vj=175°C

Zero gate voltage drain

current

I_DSS

200

µA

V_GS= 20V, V_DS= 0V

V_GS= -10V, V_DS= 0V

V_DS= 20V, I_D= 20A

f = 1MHz, V_AC= 25mV

120

Gate-source leakage current I_GSS

-120

Transconductance

g_fs

11.1

4.5

Internal gate resistance

R_G,int

Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior

of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure

sound operation of the device over the planned lifetime.

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical Characteristics

3.2

Dynamic characteristics

Table 5

Dynamic characteristics (at T_vj=25°C, unless otherwise specified)

Value

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Input capacitance

Output capacitance

Reverse capacitance

C_ossstored energy

Total gate charge

C_iss

2130

107

C_oss

C_rss

E_oss

Q_G

µJ

V_DS= 800V, V_GS= 0V, f=1MHz,

V_AC= 25mV

V_DD= 800V, I_D= 20A,

V_GS= 0/15V, turn-on pulse

Gate to source charge

Gate to drain charge

Q_GS,pl

Q_GD

V_DD= 800V, L_σ= 80nH,

R_G,ext= 9Ohm, T_vj= 175°C

V_GS.on= 15V

Short-circuit withstand

time³

µs

t_SC

³Verified by design for single short circuit event at V_GS,on= 15V.

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical Characteristics

3.3

Switching characteristics

Table 6

Parameter

Switching characteristics, Inductive load ⁴

Value

typ.

Symbol Conditions

Unit

min.

max.

MOSFET Characteristics, T_vj=25°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD=800V, I_D=20A,

V_GS=0V/15V, R_G,ext=2Ω,

L_σ=40nH,

diode: body diode at

V_GS=0V

µJ

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

E_on

E_off

E_tot

450

see Fig. E

520

Body Diode Characteristics, T_vj=25°C

Diode reverse recovery

charge

V_DD= 800V, I_SD=20A,

V_GSat diode=0V,

di_f/dt=1000A/µs,

Q_rrincludes also Q_C,

see Fig. C

Q_rr

0.15

µC

Diode peak reverse

I_rrm

recovery current

MOSFET Characteristics, T_vj=175°C

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

µJ

V_DD=800V, I_D=20A,

V_GS=0V/15V, R_G,ext=2Ω,

L_σ=40nH,

diode: body diode at

V_GS=0V,

490

565

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

E_on

E_off

E_tot

see Fig. E

Body Diode Characteristics, T_vj=175°C

Diode reverse recovery

charge

V_DD= 800V, I_SD=20A,

V_GSat diode=0V,

di_f/dt=1000A/µs,

Q_rrincludes also Q_C,

see Fig. C

Q_rr

0.25

µC

Diode peak reverse

I_rrm

recovery current

⁴The chip technology was characterized up to 200 kV/µs. The measured dv/dt was limited by measurement test

setup and package.

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 1

Reverse bias safe operating area

(RBSOA) (V_gs= 0/15V, T_c= 25°C, T_j< 175°C)

Figure 2

Power dissipation as a function of case

temperature limited by bond wire

(P_tot=f(T_C) )

Figure 3

Maximum DC drain to source current as Figure 4

a function of case temperature limited

by bond wire (I_DS=f(T_C) )

Maximum source to drain current as a

function of case temperature limited by

bond wire (I_SD=f(T_C), V_GS=0V)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 5

Typical transfer characteristic

(I_DS=f(V_GS), V_DS=20V, t_P= 20 µs)

Figure 6

Typical gate-source threshold voltage

as a function of junction temperature

(V_GS(th)=f(T_vj), I_DS=10mA, V_GS=V_DS)

Figure 7

Typical output characteristic, V_GSas

parameter (I_DS=f(V_DS), T_vj=25°C, t_P= 20 µs)

Figure 8

Typical output characteristic, V_GSas

parameter (I_DS=f(V_DS), T_vj=175°C, t_P= 20

µs)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 9

Typical on-resistance as a function of

junction temperature (R_DS(on)=f(T_vj),

V_GS=15V)

Figure 10 Typical gate charge (V_GS=f(Q_G),

I_DS=20A,V_DS=800V, turn-on pulse)

Figure 12 Typical body diode forward voltage as

function of junction temperature

(V_SD=f(T_vj), V_GS=0V, I_SD=20A)

Figure 11 Typical capacitance as a function of

drain-source voltage (C=f(V_DS), V_GS=0V,

f=1MHz)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 14 Typical body diode forward current as

function of forward voltage, V_GSas

Figure 13 Typical body diode forward current as

function of forward voltage, V_GSas

parameter (I_SD=f(V_SD), T_vj=175°C, t_P=20 µs)

parameter (I_SD=f(V_SD), T_vj=25°C, t_P=20 µs)

Figure 15 Typical switching energy losses as a

function of junction temperature

(E=f(T_vj), V_DD=800V, V_GS=0V/15V, R_G,ext=2Ω,

I_D=20A, ind. load, test circuit in Fig. E,

diode: body diode)

Figure 16 Typical switching energy losses as a

function of drain-source current

(E = f(I_DS), V_DD= 800V, V_GS= 0V/15V,

R_G,ext= 2Ω, T_vj= 175°C, ind. load, test circuit

in Fig. E, diode: body diode)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 17 Typical switching energy losses as a

function of gate resistance (E=f(R_G,ext),

V_DD=800V, V_GS=0V/15V, I_D=20A, T_vj=175°C,

ind. load, test circuit in Fig. E, diode: body

diode)

Figure 18 Typical switching times as a function of

gate resistor (t=f(R_G,ext), V_DD=800V,

V_GS=0V/15V, I_D=20A, T_vj=175°C, ind. load,

test circuit in Fig. E, diode: body diode)

Figure 19 Typical reverse recovery charge as a

function of diode current slope

(Q_rr=f(di_f/dt), V_DD=800V, I_D=20A, ind. load,

test circuit in Fig.E)

Figure 20 Typical reverse recovery current as a

function of diode current slope

(I_rrm=f(di_f/dt), V_DD=800V, I_D=20A, ind. load,

test circuit in Fig.E)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Electrical characteristic diagrams

Figure 21 Max. transient thermal resistance (MOSFET/diode)

(Z_th(j-c,max)= f(t_P), parameter D = t_p/T, thermal equivalent circuit in Fig. D)

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Package drawing

PG-TO247-3-41

Figure 22 Package drawing

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Test conditions

Figure 23 Test conditions

Datasheet

V3.0

2019-09-22

AIMW120R045M1

CoolSiC™ 1200V SiC Trench MOSFET

Revision History

Major changes since the last revision

Page or Reference Description of change

All pages

First release of datasheet V3.0

Datasheet

V3.0

2019-09-22

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Published by

Infineon Technologies AG

81726 München, Germany

Important notice

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

Warnings

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

AIMW120R045M1 [INFINEON]

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