AIMBG120R120M1 [INFINEON]
The 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles.;
| 型号： | AIMBG120R120M1 |
| 厂家： | 
Infineon |
| 描述： | The 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles. |
| 文件： | 总15页 (文件大小：1479K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
™
CoolSiC 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
Features
• VDSS = 1200 V at Tvj = -55...175 °C
TAB
• IDDC = 22 A at TC = 25°C
• RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C
• New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM
• Best in class switching energy for lower switching losses and reduced cooling efforts
• Lowest device capacitances for higher switching speeds and higher power density
1
2
3
4
5
6
7
• A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar
gate driving
• Reduced total gate charge QGtot for lower driving power and losses
• Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
• .XT die attach technology for best in class thermal performance
• Low package stray inductance for faster and cleaner switching
• Sense (Kelvin) source pin for better gate control and reduced switching losses
• Minimal creepage distance 5.85 mm (material group II) to fit 800 V applications without coating
• SMT package for automated assembly and reduced system costs
Potential applications
• On-board charger
• DC/DC converter
• Auxiliary drives
Product validation
• Qualified for Automotive Applications. Product Validation according to AEC-Q100/101
Description
Pin definition:
• Pin 1 - Gate
• Pin 2 - Kelvin sense contact
• Pin 3…7 - Source
• Tab - Drain
Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction
Type
Package
Marking
AIMBG120R120M1
PG-TO263-7-HV-ND5.8
AS120MM1
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
1
2
3
4
5
6
Datasheet
2
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
1 Package
1
Package
Table 1
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
150
Storage temperature
Soldering temperature
Tstg
Tsold
-55
°C
°C
260
MOSFET/body diode
thermal resistance,
junction-case
Rth(j-c)
0.88
1.15
K/W
Note:
Not subject to production test. Parameter verified by design/characterization.
2
MOSFET
Table 2
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
22
Unit
Drain-source voltage
VDSS
IDDC
Tvj = -55...175 °C
VGS = 20 V
V
A
Continuous DC drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
16
Peak drain current, tp
limited by Tvj(max)
IDM
VGS
VGS
EAS
Ptot
VGS = 20 V
54
-10...25
-5...23
92
A
V
Gate-source voltage, max.
transient voltage1)
tp ≤ 0.5 µs, D < 0.01
Gate-source voltage, max.
static voltage
V
Avalanche energy, single
pulse
ID = 5.1 A, VDD = 50 V, L = 7.02 mH
mJ
W
Power dissipation, limited
by Tvj(max)
Tc = 25 °C
Tc = 100 °C
130
65
1)
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned
lifetime.
Table 3
Recommended values
Symbol Note or test condition
VGS(on)
Parameter
Values
Unit
Recommended turn-on
gate voltage
20
V
Recommended turn-off
gate voltage
VGS(off)
0
V
Datasheet
3
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Typ.
117
Unit
Min.
Max.
Drain-source on-state
resistance1)
RDS(on) ID = 7 A
Tvj = 25 °C,
VGS(on) = 20 V
150
mΩ
Tvj = 100 °C,
VGS(on) = 20 V
164
234
123
Tvj = 175 °C,
VGS(on) = 20 V
Tvj = 25 °C,
VGS(on) = 18 V
Gate-source threshold
voltage1)
VGS(th) ID = 2.2 mA, VDS = VGS
(tested afer 1 ms pulse
at VGS = 20 V)
Tvj = 25 °C
3.5
4.3
3.8
5.1
6
V
Tvj = 175 °C
Zero gate-voltage drain
current
IDSS
VDS = 1200 V, VGS = 0 V
Tvj = 25 °C
Tvj = 175 °C
VGS = 25 V
VGS = -10 V
0.1
0.4
µA
nA
Gate leakage current
IGSS
VDS = 0 V
100
-100
Forward transconductance
gfs
tSC
ID = 7 A, VDS = 20 V
4.3
1.5
2
S
Short-circuit withstand
time
VDD ≤ 800 V,
VGS(on) = 20 V
VGS(on) = 18 V
VGS(on) = 15 V
µs
VDS,peak < 1200 V,
Tvj(start) = 25 °C,
RG,ext = 2 Ω
2.5
3.9
458
25
1
Internal gate resistance
Input capacitance
RG,int
Ciss
f = 1 MHz, VAC = 25 mV
Ω
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
pF
pF
pF
Output capacitance
Coss
Crss
Reverse transfer
capacitance
Coss stored energy
Total gate charge
Eoss
QG
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
11
18
µJ
nC
VDD = 800 V, ID = 7 A, VGS = 0/20 V, turn-on
pulse
Plateau gate charge
Gate-to-drain charge
Turn-on delay time
QGS(pl) VDD = 800 V, ID = 7 A, VGS = 0/20 V, turn-on
5
3
nC
nC
ns
pulse
QGD
VDD = 800 V, ID = 7 A, VGS = 0/20 V, turn-on
pulse
td(on)
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
Tvj = 25 °C
5
8
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
(table continues...)
Datasheet
4
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
2 MOSFET
Table 4
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min.
Typ.
Max.
Rise time
tr
td(off)
tf
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
Tvj = 25 °C
5
7
ns
Tvj = 175 °C
RGS(on) = 2 Ω,
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-off delay time
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
RGS(on) = 2 Ω,
Tvj = 25 °C
10
10
ns
ns
µJ
µJ
µJ
°C
Tvj = 175 °C
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Fall time
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
RGS(on) = 2 Ω,
Tvj = 25 °C
10
11
Tvj = 175 °C
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Etot
Tvj
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
RGS(on) = 2 Ω,
Tvj = 25 °C
34
47
Tvj = 175 °C
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
RGS(on) = 2 Ω,
Tvj = 25 °C
18
21
Tvj = 175 °C
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
VDD = 800 V, ID = 7 A,
VGS = 0/20 V,
RGS(on) = 2 Ω,
Tvj = 25 °C
52
68
Tvj = 175 °C
RGS(off) = 2 Ω, L = 15 nH,
σ
diode: body diode at
VGS = 0 V
Virtual junction
temperature
-55
175
1)
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned
lifetime.
Note:
Characteristics at Tvj = 25°C, unless otherwise specified.
Datasheet
5
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
3 Body diode (MOSFET)
3
Body diode (MOSFET)
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
15
Unit
Drain-source voltage
VDSS
ISDC
Tvj = -55...175 °C
VGS = 0 V
V
A
Continuous reverse drain
current for Rth(j-c,max)
limited by Tvj(max)
Tc = 25 °C
,
Tc = 100 °C
13
Peak reverse drain current,
tp limited by Tvj(max)
ISM
VGS = 0 V
15
A
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
3.9
Unit
Min.
Max.
Drain-source reverse
voltage
VSD
Qfr
Ifrm
Tvj
ISD = 7 A, VGS = 0 V
Tvj = 25 °C
Tvj = 100 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 175 °C
5
V
3.8
3.7
MOSFET forward recovery
charge
VDD = 800 V,
77
nC
A
ISD = 7 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
96
MOSFET peak forward
recovery current
VDD = 800 V,
Tvj = 25 °C
10
11
ISD = 7 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 175 °C
Virtual junction
temperature
-55
175
°C
Datasheet
6
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area (RBSOA)
IDS = f(VDS
Power dissipation as a function of case temperature
Ptot = f(Tc)
)
Tvj ≤ 175 °C, VGS = 0/20 V, Tc = 25 °C
60
180
160
140
120
100
80
50
40
30
20
10
0
60
40
20
0
0
200
400
600
800
1000 1200 1400
0
25
50
75
100
125
150
175
Maximum DC drain to source current as a function of Maximum source to drain current as a function of case
case temperature
IDS = f(Tc)
temperature
ISD = f(Tc)
VGS = 0 V
30
25
20
15
10
5
18
16
14
12
10
8
6
4
2
0
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Datasheet
7
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical transfer characteristic
Typical gate-source threshold voltage as a function of
junction temperature
VGS(th) = f(Tvj)
IDS = f(VGS
)
VDS = 20 V
ID = 2.2 mA
150
125
100
75
7
6
5
4
3
2
1
0
50
25
0
25
50
75
100
125
150
175
0
2
4
6
8
10 12 14 16 18 20
Typical output characteristic, VGS as parameter
IDS = f(VDS
Typical output characteristic, VGS as parameter
IDS = f(VDS
)
)
Tvj = 25 °C
Tvj = 175 °C
100
100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Datasheet
8
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical on-state resistance as a function of junction
temperature
RDS(on) = f(Tvj)
Typical gate charge
VGS = f(QG)
ID = 7 A, VDS = 800 V
ID = 7 A
260
240
220
200
180
160
140
120
100
80
20
16
12
8
4
0
-50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10 12 14 16 18 20
Typical capacitance as a function of drain-source
voltage
Typical reverse drain voltage as function of junction
temperature
C = f(VDS
)
VSD = f(Tvj)
f = 100 kHz, VGS = 0 V
ISD = 7 A, VGS = 0 V
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
100
10
1
0.1
1
25
50
75
100
125
150
175
10
100
1000
Datasheet
9
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
ISD = f(VSD
)
ISD = f(VSD)
Tvj = 25 °C
Tvj = 175 °C
50
40
35
30
25
20
15
10
5
40
30
20
10
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Typical switching energy as a function of junction
temperature, test circuit in Fig. F, 2nd device own
body diode: VGS = 0 V
Typical switching energy as a function of gate
resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
E = f(Tvj)
E = f(RG,ext)
VGS = 0/20 V, ID = 7 A, RG,ext = 2 Ω, VDD = 800 V
ID = 7 A, Tvj = 175 °C, VGS = 0/20 V, VDD = 800 V
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
0
15
30
45
60
75
Datasheet
10
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching times as a function of gate
Typical reverse recovery current as a function of
resistance, test circuit in Fig. F, 2nd device own body reverse drain current slope, test circuit in Fig. F, 2nd
diode: VGS = 0 V
t = f(RG,ext
device own body diode: VGS = 0 V
Ifrm = f(diSD/dt )
)
VGS = 0/20 V, ID = 7 A, Tvj = 175 °C, VDD = 800 V
VGS = 0/20 V, ISD = 7 A, VDD = 800 V
70
35
30
25
20
15
10
5
60
50
40
30
20
10
0
0
0
15
30
45
60
75
0
2000
4000
6000
8000
10000
Max. transient thermal impedance (MOSFET/diode)
Zth(j-c),max = f(tp)
D = tp/T
1
0.1
0.01
0.001
1E-7 1E-6 1E-5 0.0001 0.001 0.01
0.1
1
Datasheet
11
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
5 Package outlines
5
Package outlines
PG-TO263-7-HV-ND5.8
PACKAGE - GROUP
NUMBER:
PG-TO263-7-U01
MILLIMETERS
DIMENSIONS
MIN.
4.30
0.00
2.30
0.50
0.00
0.40
1.17
9.05
5.90
9.80
9.36
0.00
8.40
MAX.
4.50
0.10
2.50
0.70
0.15
0.60
1.37
9.45
6.10
10.20
9.56
0.30
8.60
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
E3
e
1.27
H
15.00
L
4.20
0.70
1.70
5.20
1.30
2.30
L1
L2
L3
P
2.70
0.35
2.03
1.40
0.00°
0.55
2.23
1.60
8.00°
R
S
THETA
Figure 1
Datasheet
12
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
6 Testing conditions
6
Testing conditions
I,V
VDS
90%
diSD/dt
tfr = ta + tb
Qfr = Qa + Qb
ISD
tfr
ta
tb
10%
t
VGS
Qa
Qb
10% Ifrm
td(on)
td(off)
Ifrm
tr
ton
tf
toff
VSD
Figure A. Definition of switching times
VGS(t)
90% VGS
Figure B. Definition of body diode
switching characteristics
VGS,VDS
Q
97% VDS
VGS = 18 V
10% VGS
t
ID(t)
1% ID
t
VDS
VDS(t)
t, Q
QGS,pl
QG,tot
QGD
Figure D. Definition of QGD
½Lσ
Eon
ʃ VDS*ID*dt
=
Eoff
ʃ VDS*ID*dt
=
t4
t2
second
device
t3
t1
3% VDS
t
L
Cσ
t1
t2
t3
t4
VGS(off)
Figure C. Definition of switching losses
VDD
τ1/r1
τ2/r2
τn/rn
RG
DUT
Tj(t)
p(t)
r1
r2
r3
½Lσ
M
TC
=
Figure F. Dynamic test circuit
Parasitic inductance Lσ,
Parasitic capacitor Cσ,
=
Figure E. Thermal equivalent circuit
Figure 2
Datasheet
13
Revision 1.10
2023-05-16
AIMBG120R120M1
™
CoolSiC 1200 V SiC Trench MOSFET
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
1.10
2022-12-08
2023-05-10
2023-05-16
Preliminary datasheet
Final datasheet
Final datasheet
Datasheet
14
Revision 1.10
2023-05-16
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-05-16
Published by
Infineon Technologies AG
81726 Munich, Germany
Important notice
Warnings
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
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