A6F60MPBF [INFINEON]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, DO-203AA;型号: | A6F60MPBF |
厂家: | Infineon |
描述: | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, DO-203AA 局域网 二极管 |
文件: | 总6页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I20206 rev. A 09/98
6F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
6 A
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V VRRM
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
IF(AV)
6F(R)
6
Units
A
@ TC
160
9.5
°C
A
IF(RMS)
IFSM
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
range
159
A
167
A
I2t
134
A2s
A2s
V
141
VRRM
TJ
100 to 1200
- 65 to 175
case style
DO-203AA (DO-4)
range
°C
1
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6F(R) Series
Bulletin I20206 rev. A 09/98
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM, maximum
VRSM, maximum non-
VR(BR), minimum
IRRM max.
Type number
repetitive peak
reverse voltage
V
repetitive peak
reverse voltage
V
avalanche
voltage
@ TJ = 175°C
V
--
--
(1)
mA
10
20
100
200
150
275
40
60
400
600
500
725
500
750
6F(R)
12
80
800
950
950
100
120
1000
1200
1200
1400
1150
1350
(1) Avalanche version only available from VRRM 400V to 1200V.
Forward Conduction
Parameter
6F(R)
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
6
A
°C
A
180° conduction, half sine wave
160
9.5
IF(RMS) Max. RMS forward current
PR
Maximum non-repetitive
peak reverse power
4
K/W 10µs square pulse, TJ = TJ max.
see note (2)
IFSM
Max. peak, one-cycle forward,
159
167
134
141
127
116
90
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
non-repetitive surge current
A
100% VRRM
reapplied
Sinusoidal half wave,
Initial TJ = TJ max.
I2t
Maximum I2t for fusing
No voltage
reapplied
A2s
100% VRRM
reapplied
82
I2√t
Maximum I2√t for fusing
1270
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
0.63
0.86
15.7
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
voltage
V
VF(TO)2 High level value of threshold
voltage
(I > π x IF(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
1
f
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
r
High level value of forward
slope resistance
2
f
5.6
(I > π x IF(AV)), TJ = TJ max.
VFM
Max. forward voltage drop
1.10
V
I = 19A, TJ = 25°C, t = 400µs rectangular wave
pk p
(2) Available only for Avalanche version, all other parameters the same as 6F.
2
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6F(R) Series
Bulletin I20206 rev. A 09/98
Thermal and Mechanical Specifications
Parameter
6F(R)
Units Conditions
TJ
T
Max. junction operating temperature range
Max. storage temperature range
-65 to 175
-65 to 200
°C
stg
RthJC Max. thermal resistance, junction to case
2.5
0.5
DC operation
K/W
Nm
RthCS Max. thermal resistance, case
to heatsink
Mounting surface, smooth, flat and
greased
T
Mounting torque, ± 10%
1.2
Lubricated threads
(1.5)
(Not lubricated threads)
wt
Approximate weight
Case style
7 (0.25)
g (oz)
DO-203AA (DO-4)
See Outline Table
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
TJ = TJ max.
180°
120°
90°
0.34
0.44
0.57
0.85
1.37
0.29
0.48
0.63
0.88
1.39
K/W
60°
30°
Ordering Information Table
Device Code
A
6
F
R
120
M
1
2
3
4
5
6
1
-
A
= Avalanche diode
None = Standard diode
2
3
4
-
-
-
Current rating: Code = IF(AV)
F
= Standard device
None = Stud Normal Polarity (Cathode to Stud)
= Stud Reverse Polarity (Anode to Stud)
R
5
6
-
-
Voltage code: Code x 10 = VRRM (See Voltage Ratings table)
None = StudbaseDO-203AA(DO-4)10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
3
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6F(R) Series
Bulletin I20206 rev. A 09/98
Outlines Table
Case Style DO-203AA (DO-4)
All dimensions in millimeters (inches)
175
175
6F(R) Series
R (DC) = 2.5 K/W
6F(R) Series
R
(DC)= 2.5 K/W
thJC
thJC
170
165
160
155
170
165
160
155
Conduction Period
Conduction Angle
90°
90°
60°
60°
120°
180°
120°
30°
180°
30°
DC
0
1
2
3
4
5
6
7
0
2
4
6
8
10
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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6F(R) Series
Bulletin I20206 rev. A 09/98
6
5
4
3
2
1
0
R
h
180°
120°
90°
60°
30°
1
5
K
t
S
A
/
W
=
2
3
0
K
0
K
/
W
/
W
-
D
e
l
t
a
4
0
R
K
/
W
5
0
K
/
W
RMS Limit
Conduction Angle
6F(R) Series
T = 175°C
J
0
1
2
3
4
5
06
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
8
7
6
5
4
3
2
1
0
R
h
t
DC
180°
120°
90°
60°
30°
S
A
=
1
5
K
/
W
-
D
e
l
t
a
R
4
0
K/
W
RMS Limit
5
0
K/
Conduction Period
W
6F(R) Series
T =175°C
J
0
2
4
6
8
100
25
50
75
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
160
150
140
130
120
110
100
90
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T = 175°C
Applied Following Surge.
Initial T = 175°C
RRM
J
J
No Voltage Reapplied
Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
RRM
80
80
70
70
60
60
50
6F(R) Series
6F(R) Series
50
40
40
30
0.01
0.1
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
5
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6F(R) Series
Bulletin I20206 rev. A 09/98
10
1000
Steady State Value
=2.5 K/W
R
thJC
(DCOperation)
6F(R) Series
100
1
T = 25°C
J
10
1
T = 175°C
J
6F(R) Series
1
0.1
0.001
0.01
0.1
10
0
0.5
1
1.5
2
2.5
Square Wave Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
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http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
6
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