6TQ040STRRPBF [INFINEON]
Rectifier Diode, Schottky, 1 Element, 6A, 40V V(RRM),;型号: | 6TQ040STRRPBF |
厂家: | Infineon |
描述: | Rectifier Diode, Schottky, 1 Element, 6A, 40V V(RRM), |
文件: | 总6页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin PD-2.283 rev. D 09/00
6TQ...
6TQ...S
SCHOTTKY RECTIFIER
6 Amp
IF(AV) = 6Amp
VR = 35 to 45V
Major Ratings and Characteristics
Description/Features
The6TQ Schottkyrectifierserieshasbeenoptimizedfor low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
Characteristics
6TQ
Units
I
Rectangular
waveform
6
A
F(AV)
V
I
range
35 to 45
690
V
A
V
175° C T operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
RRM
J
@tp=5µssine
FSM
V
@6Apk,T =125°C
J
0.53
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
range
-55to175
°C
Case Styles
10TQ...
10TQ... S
D2PAK
TO-220
1
6TQ... Series
Bulletin PD-2.283 rev. D 09/00
Voltage Ratings
Part number
6TQ035
6TQ040
6TQ045
VR
Max. DC Reverse Voltage (V)
35
40
45
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
6TQ Units Conditions
IF(AV) Max.AverageForwardCurrent
6
A
50%dutycycle@TC=164°C,rectangularwaveform
*SeeFig.5
Followinganyrated
loadconditionand
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent*SeeFig.7
690
140
5µs Sineor3µsRect.pulse
10msSineor6msRect. pulse
A
withratedVRRMapplied
EAS Non-RepetitiveAvalancheEnergy
8
1.20
mJ
A
TJ=25°C, IAS=1.20Amps,L=11.10mH
Currentdecayinglinearlytozeroin1µsec
FrequencylimitedbyTJ max.VA =1.5xVR typical
IAR
RepetitiveAvalancheCurrent
Electrical Specifications
Parameters
6TQ Units Conditions
VFM Max. Forward Voltage Drop
(1)
0.60
0.73
0.53
0.64
0.8
V
V
V
V
@ 6A
@ 12A
@ 6A
@ 12A
TJ = 25 °C
TJ = 125 °C
* See Fig. 1
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
mA
mA
TJ = 25 °C
TJ = 125 °C
VR = rated VR
7
VF(TO) Threshold Voltage
0.35
V
TJ = TJ max.
rt
CT
LS
Forward Slope Resistance
Max. Junction Capacitance
Typical Series Inductance
18.23
400
8.0
mΩ
pF
nH
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
(Rated VR )
10,000 V/ µs
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
6TQ Units Conditions
TJ
Max.JunctionTemperatureRange
-55to175 °C
-55to175 °C
2.2
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W DCoperation
*SeeFig.4
RthCS TypicalThermalResistance,
CasetoHeatsink
0.50
°C/W Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
2(0.07) g(oz.)
Min.
Max.
6(5)
Kg-cm
(Ibf-in)
12(10)
2
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6TQ... Series
Bulletin PD-2.283 rev. D 09/00
100
10
1
100
10
T
= 175
C
J
150
125
C
C
1
100
75
C
C
C
0.1
0.01
0.001
0.0001
50
25
C
0
5
10 15 20 25 30 35 40 45
Reverse Voltage - V (V)
R
Fig.2-Typical Values of Reverse Current
Vs. Reverse Voltage
1000
T
T
T
= 175
= 125
C
C
C
J
J
J
=
25
T
= 25
C
J
100
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1
1.2
FM
1.4
1.6
Reverse Voltage - V (V)
R
Forw ard Voltage Drop - V
(V )
Fig.1-Maximum Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
D = 0.33
P
DM
0.1
D = 0.25
D = 0.20
t
1
t
2
0.01
Notes:
1. Duty factor D =
2. Peak T = PDM x Z
Single Pulse
(Thermal Resistance)
t
/ t
+ T
J
C
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (Seconds)
1
Fig.4-Maximum Thermal Impedance ZthJC Characteristics
3
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6TQ... Series
Bulletin PD-2.283 rev. D 09/00
180
175
170
5
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
RMS Lim it
165
Square w ave (D = 0.50)
80% Rated V applied
R
160
155
150
see note (2)
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
Average Forw ard Current - I
(A)
Average Forw ard Current - I
(A)
F(AV)
F(AV)
Fig.5-MaximumAllowableCaseTemperature
Vs.AverageForwardCurrent
Fig.6-Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And W ith Rated V Applied
RRM
Following Surge
100
10
100
1000
10000
Square W ave Pulse Duration - t (m icrosec)
p
Fig.7-MaximumNon-RepetitiveSurgeCurrent
L
HIG H-SPEED
SW ITCH
IRFP460
DUT
FREE-W HEEL
DIO DE
Rg = 25 ohm
V d = 25 Volt
+
CURRENT
M ONITOR
40HFL40S02
Fig.8-Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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6TQ... Series
Bulletin PD-2.283 rev. D 09/00
Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
1.22 (0.05)
3.78 (0.15)
3.54 (0.14)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
2°
1
3
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
BASE
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
CATHODE
0.94 (0.04)
0.69 (0.03)
2
3
1
ANODE
CATHODE
1
3
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
Conform to JEDEC outline TO-220AC
Dimensions in millimeters and (inches)
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
2.61 (0.10)
2.32 (0.09)
0.55 (0.02)
0.46 (0.02)
8.89 (0.35)
REF.
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
0.69 (0.27)
BASE
Cathode
2
1
3
4.57 (0.18)
4.32 (0.17)
8.89 (0.35)
17.78 (0.70)
2
0.61 (0.02) MAX.
1
3
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
Anode
Anode
2X
2.54 (0.10)
Conform to JEDEC outline D2Pak (SMD-220)
2X
Dimensions in millimeters and (inches)
5
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6TQ... Series
Bulletin PD-2.283 rev. D 09/00
Ordering Information Table
Device Code
6
T
Q
045
S
1
2
3
4
5
1
2
3
4
5
-
-
-
-
-
Essential Part Number
T = TO-220
Q = Schottky Q Series
Voltage Rating
S = D2Pak
035 = 35V
040 = 40V
045 = 45V
6
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相关型号:
6TQ040TRLPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, 40V V(RRM), Silicon, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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