52PFR40WPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN;型号: | 52PFR40WPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN 整流二极管 |
文件: | 总7页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Bulletin I20105 rev. D 01/05
50PF(R)...(W) SERIES
Stud Version
STANDARD RECOVERY DIODES
GEN II DO5
Features
High surge current capability
Designed for a wide range of applications
Stud cathode and stud anode version
Leaded version available/ wire version available
Low thermal resistance
50 A
UL approval pending
Typical Applications
50PF(R)...
Battery charges
Converters
Power supplies
Machine tool controls
Welding
Major Ratings and Characteristics
50PF (R)...(W)
case style DO-203AB (DO-5)
Units
Parameters
40 to 120
IF(AV)
50
140
A
50PF(R)...W
@ TC
°C
IF(RMS)
IFSM
78
A
A
@50Hz
@ 60Hz
@50Hz
@ 60Hz
range
800
830
I2t
3200
A2s
2900
VRRM
TJ
400 to 1200
- 55 to 180
V
case style DO-203AB (DO-5)
range
°C
1
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50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VRRM, maximum
VRSM, maximum non-
IRRM max.
Type number
50PF (R)...(W)
Code
repetitive peak
reverse voltage
V
repetitive peak
reverse voltage
V
@ TJ = 150°C
mA
9
40
80
400
800
500
960
120
1200
1440
Forward Conduction
50PF(R)...(W)
40 to120
Parameter
Units Conditions
IF(AV) Max. average forward current
@ Case temperature
50
140
A
°C
180° conduction, half sine wave
IF(RMS) Max. RMS forward current
78
A
IFSM
Max. peak, one-cycle forward,
non-repetitive surge current
800
830
670
t = 10ms
t = 8.3 ms
t = 10ms
No voltage
reapplied
A
100% VRRM
700
3200
2900
2260
t = 8.3 ms
t = 10ms
t = 8.3ms
t = 10ms
reapplied
No voltage
reapplied
Sinusoidal half wave,
Initial TJ = 150°C
I2t
Maximum I2t for fusing
A2s
100% VRRM
2050
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
32000
A2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO) Low level value of threshold
voltage
0.77
V
(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
r
Low level value of forward
slope resistance
f
4.30
1.40
mΩ (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
= 125A, T = 25°C, t = 400µs rectangular wave
VFM
Max. forward voltage drop
V
I
pk
p
J
2
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50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
Thermal and Mechanical Specifications
50PF (R)...(W)
40 to120
Parameter
Units Conditions
TJ
T
Max.junctionoperatingtemperaturerange
Max. storagetemperaturerange
-55 to 180
°C
-55 to 180
0.51
stg
RthJC Max. thermal resistance, junction to case
DC operation
K/W
Nm
RthCS Max. thermal resistance, case
to heatsink
Mounting surface, smooth, flat and
greased
0.25
T
Allowable mounting torque
3.4 +0-10%
30
Tighting on nut (1)
lbf · in Not lubricated threads
Nm Tighting on hexagon (2)
+0-10%
2.3
20
lbf · in Lubricated threads
g(oz)
wt
Approximate weight
Casestyle
15.8 (0.56)
DO-203AB(DO5)
SeeOutlineTable
(1) As general recommendation we suggest to tight on Hexagon and not on nut
(2) Torque must be appliable only to Hexagon and not to plastic structure
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
60°
30°
0.11
0.16
0.20
0.29
0.49
0.10
0.16
0.22
0.31
0.50
TJ = TJ max.
K/W
180
170
160
150
140
130
120
110
180
170
160
150
140
130
120
50PF(R) Serie
RthJC = 0.51 K/W
50PF(R) Series
RthJC (DC) = 0.51 K/W
Conduction Period
Conduction Angle
30˚
180˚
120˚
60˚
90˚
90˚
60˚
120˚
30˚
DC
180˚
0
10
20
30
40
50
60
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
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3
50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
100
180˚
0.7 K/W
1 K/W
120˚
1.5 K/W
2 K/W
80
60
40
20
0
90˚
60˚
30˚
3 K/W
RMS Limit
5 K/W
7 K/W
Conduction Angle
10 K/W
50PF(R) Series
Tj = 180˚C
30
60
90 120 150 180
0
10
20
30
40
50
60
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
100
80
60
40
20
0
0.7 K/W
180˚
120˚
90˚
1 K/W
1.5 K/W
2 K/W
60˚
DC
30˚
3 K/W
RMS Limit
5 K/W
7 K/W
Conduction Period
10 K/W
50PF(R) Series
Tj = 180˚C
30
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
60
90 120 150 180
0
20
40
60
80
Average Forward Current (A)
4
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50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
800
700
600
500
400
300
200
900
800
700
600
500
400
300
200
100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150˚C
No Voltage Reapplied
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
Rated Vrrm Reapplied
@ 50 Hz 0.0100 s
50PF(R) Series
50PF(R) Series
1
10
100
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non -Repetitive Surge Current
Fig. 6 - Maximum Non -Repetitive Surge Current
1000
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
100
10
1
0.1
Tj = 25˚C
Tj = 180˚C
50PF(R) Series
50PF(R) Series
0.01
0.0001 0.001 0.01
Square Wave Pulse Duration (s)
0
1
2
3
4
0.1
1
10
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
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5
50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
Outline Table
Fig. A - 50PF (R)...
Case Style DO-203AB (DO-5)
Note: For Metric device please contact Factory
Fig. C - 52PF (R)...
Case Style DO-203AB (DO-5)
Note: For Metric device please contact Factory
Fig. B - 50PF (R)...(W)
Case Style DO-203AB (DO-5)
Note: For Metric device please contact Factory
6
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50PF (R)...(W) Series
Bulletin I20105 rev. D 01/05
Ordering Information Table
Device Code
50 PF
R
120
W
1
2
3
4
5
1
-
50
52
=
=
Standard device
Isolated lead on standard terminal
with silicone sleeve available for 1200V only
(Red = Reverse Polarity)
(Blue = Normal Polarity)
2
3
-
-
PF
=
Plastic Package
None = Stud Normal Polarity (Cathode to Stud)
Stud Reverse Polarity (Anode to Stud)
R
=
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Ratings table)
None = Standard terminal (see Fig. A)
W
= Wire terminal (see Fig. B)
Data and specifications subject to change without notice.
This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/05
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7
相关型号:
52PFR80WPBF
Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon, DO-203AB, PLASTIC, DO-5, 1 PIN
INFINEON
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