40TTS12 [INFINEON]
PHASE CONTROL SCR Lead-Free; 相位控制可控硅无铅
| 型号： | 40TTS12 |
| 厂家： | 
Infineon |
| 描述： | PHASE CONTROL SCR Lead-Free |
| 文件： | 总7页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2233 rev. A 11/05
SAFEIR Series
40TTS12PbF
PHASE CONTROL SCR
Lead-Free ("PbF" suffix)
Description/ Features
The 40TTS12PbF SAFEIR series of silicon con-
VT
< 1.6V @ 80A
trolled rectifiers are specifically designed for me-
dium power switching and phase control applica-
tions. The glass passivation technology used has
reliable operation up to 140°C junction tempera-
ture.
ITSM = 350A
VRRM = 1200V
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
andoutputrectifierswhichareavailableinidentical
package outlines.
Major Ratings and Characteristics
Package Outline
Characteristics
Values
Units
IT(AV) Sinusoidal
waveform
IRMS
25
A
40
1200
350
A
V
VRRM
ITSM
VT
V
DRM
/
A
TJ = 25°C
1.6
V
dv/dt
di/dt
TJ
500
V/µs
A/µs
°C
150
TO-220
-40to140
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1
40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Voltage Ratings
VRRM, maximum
VDRM , maximum
TJ
peak reverse voltage
V
peak direct voltage
V
Part Number
40TTS12PbF
°C
1200
1200
-25 to 140
Absolute Maximum Ratings
Parameters
40TTS.. Units
Conditions
IT(AV) Max. AverageOn-stateCurrent
25
A
@TC =93°C, 180°conductionhalfsinewave
IRMS Max.RMSOn-stateCurrent
ITSM Max.Peak One Cycle Non-Repetitive
Surge Current
40
300
350
450
630
6300
1.6
10msSinepulse, ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse, ratedVRRMapplied
10msSinepulse,novoltagereapplied
I2t
Max.I2tforfusing
A2s
I2√t Max.I2√tforfusing
A2√s t=0.1to10ms, novoltagereapplied
VTM Max. On-stateVoltageDrop
V
mΩ
V
@80A,TJ = 25°C
TJ = 140°C
rt
On-state slope resistance
11.4
0.96
0.5
VT(TO) Threshold Voltage
IRM/IDM Max.Reverse and Direct
Leakage Current
mA
TJ = 25 °C
TJ = 140 °C
VR = rated VRRM/ VDRM
10
IH
IL
Holding Current
100
mA
Anode Supply = 6V, Resistive load, Initial IT = 1A
Anode Supply = 6V, Resistive load
Max. Latching Current
200
500
150
mA
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
V/µs
A/µs
2
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Triggering
Parameters
40TTS.. Units
Conditions
PGM Max. peak Gate Power
8.0
2.0
1.5
10
W
PG(AV) Max. average Gate Power
+ IGM Max. paek positive Gate Current
- VGM Max. paek negative Gate Voltage
A
V
IGT
Max. required DC Gate Current
to trigger
35
mA
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 25°C
VGT Max. required DC Gate Voltage
to trigger
1.3
V
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
0.2
1.5
TJ = 140°C, VDRM = rated value
TJ = 140°C, VDRM = rated value
mA
Switching
Parameters
Typical turn-on time
40TTS..
0.9
Units
µs
Conditions
TJ = 25°C
tgt
trr
tq
Typical reverse recovery time
Typical turn-off time
4
TJ = 140°C
110
Thermal-Mechanical Specifications
Parameters
40TTS.. Units
Conditions
TJ
Max. Junction Temperature Range
-40to140
-40to140
0.8
°C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
toCase
°C/W
DC operation
RthJA Max. Thermal Resistance Junction
to Ambient
60
RthCS Typ. Thermal Resistance Case
to Heatsink
0.5
Mountingsurface,smoothandgreased
wt
T
Approximate Weight
Mounting Torque
2(0.07)
6(5)
12(10)
g(oz.)
Min.
Max.
Kg-cm
(Ibf-in)
CaseStyle
TO-220AC
3
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
140
130
120
110
100
90
140
RthJC (DC) = 0.8 ˚C/W
RthJC (DC) = 0.8 ˚C/W
130
120
Conduction Angle
Conduction Period
110
30˚
100
90
60˚
90˚
30˚
120˚
60˚
180˚
90˚
80
80
120˚
180˚
DC
70
70
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
DC
180˚
120˚
90˚
60˚
30˚
180˚
120˚
90˚
60˚
30˚
RMS Limit
RMS Limit
Conduction Angle
Conduction Period
Tj = 125˚C
Tj = 125˚C
0
5
10
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
15
20
25
30
0
10
20
30
40
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
400
280
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
260
240
220
200
180
160
140
120
Initial Tj = 125˚C
350
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
No Voltage Reapplied
Rated Vrrm Reapplied
300
250
200
150
100
1
10
100
0.01
0.1
1
10
Number of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
4
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
1000
100
10
Tj = 25˚C
Tj = 125˚C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
VGD
(4)
(3)
(1)
(2)
Frequency Limited by PG(AV)
IGD
0.1
0.001
0.01
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
0.1
1
10
5
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Outline Table
10.54 (0.41)
MAX.
1.32 (0.05)
1.22 (0.05)
3.78 (0.15)
3.54 (0.14)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
2°
3
2
1
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.64 (0.10)
0.94 (0.04)
0.69 (0.03)
Base
Common
Cathode
2
3
2
1
0.61 (0.02) MAX.
4.57 (0.18)
4.32 (0.17)
5.08 (0.20) REF.
2
Common
Cathode
1
3
Anode
Anode
TO-220
Dimensions in millimeters (inches)
Part Marking Information
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
EXAMPLE: THIS IS A 40TTS12
LOT CODE 1789
DATE CODE
YEAR 1 = 2001
WEEK 19
ASSEMBLED ON WW 19, 2001
ASSEMBLY
LOT CODE
P = LEAD-FREE
6
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40TTS12PbF SAFEIR Series
Bulletin I2233 rev. A 11/05
Ordering Information Table
Device Code
40
T
T
S
12 PbF
2
4
5
6
3
1
1
2
-
-
Current Rating, RMS value
Circuit Configuration
T = Single Thyristor
Package
T = TO-220
Type of Silicon
3
4
-
-
S = Standard Recovery Rectifier
Voltage Rating (12 = 1200V)
y none = Standard Production
y PbF = Lead-Free
5
6
-
-
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/05
7
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