31DQ10TR [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 31DQ10TR |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总5页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD-2.306 rev. G 12/03
31DQ09
31DQ10
SCHOTTKY RECTIFIER
3.3 Amp
Major Ratings and Characteristics
Description/ Features
The 31DQ.. axial leaded Schottky rectifier has been opti-
mized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power sup-
plies, converters, free-wheeling diodes, and reverse
battery protection.
Characteristics
31DQ..
Units
I
Rectangular
waveform
3.3
A
F(AV)
Low profile, axial leaded outline
V
I
90/100
210
V
A
RRM
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
@tp=5µssine
FSM
Very low forward voltage drop
High frequency operation
V
@3Apk, T =25°C
J
0.85
V
F
J
Guard ring for enhanced ruggedness and long term
reliability
T
-40 to 150
°C
CASE STYLE AND DIMENSIONS
Outline C - 16
Dimensions in millimeters and inches
www.irf.com
1
31DQ09, 31DQ10
Bulletin PD-2.306 rev. G 12/03
Voltage Ratings
Part number
31DQ09
31DQ10
VR
Max. DC Reverse Voltage (V)
90
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
31DQ.. Units
Conditions
IF(AV) Max. Average Forward Current
*SeeFig. 4
3.3
A
50% duty cycle @ TC = 53.4°C, rectangular wave form
IFSM Max.PeakOneCycleNon-Repetitive
210
34
5µs Sineor3µsRect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and with
rated VRRM applied
A
SurgeCurrent *SeeFig. 6
EAS Non-Repetitive Avalanche Energy
3.0
0.5
mJ
A
TJ = 25°C, IAS =1.0Amps,L=6mH
Current decaying linearly to zero in 1 µsec
FrequencylimitedbyTJ max. VA =1.5xVR typical
IAR
Repetitive Avalanche Current
Electrical Specifications
Parameters
31DQ.. Units
Conditions
VFM Max. Forward Voltage Drop
0.85
0.97
0.69
0.80
1
V
V
V
@ 3A
@ 6A
@ 3A
TJ = 25 °C
* See Fig. 1
(1)
TJ = 125 °C
V
@ 6A
IRM Max. Reverse Leakage Current
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
* See Fig. 2
(1)
3
CT
LS
Typical Junction Capacitance
Typical Series Inductance
110
9.0
10000
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
31DQ.. Units
Conditions
TJ
Max. Junction Temperature Range
-40 to150
-40 to150
80
°C
°C
Tstg Max. Storage Temperature Range
RthJA Max. Thermal Resistance Junction
to Ambient
RthJL Typical Thermal Resistance Junction
toLead
°C/W DC operation
Without cooling fins
°C/W DC operation
34
wt
Approximate Weight
1.2 (0.042) g(oz.)
C-16
Case Style
2
www.irf.com
31DQ09, 31DQ10
Bulletin PD-2.306 rev. G 12/03
10
1
T
= 150˚C
125˚C
J
10
0.1
0.01
0.001
0.0001
0
25˚C
0
20
40
60
80
100
Reverse Voltage-VR (V)
T
= 150˚C
= 125˚C
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
J
1
T
J
T
= 25˚C
J
1000
100
10
T
= 25˚C
J
0.1
0
0.3
0.6
0.9
1.2
Forward Voltage Drop-VFM (V)
Fig. 1-Max. Forward Voltage Drop Characteristics
0
40
80
120
160
Reverse Voltage-VR (V)
Fig. 3-Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
31DQ09, 31DQ10
Bulletin PD-2.306 rev. G 12/03
150
120
90
4
3
2
1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
RMS Limit
60
Square wave (D = 0.50)
80% Rated V applied
R
30
see note (2)
0
0
1
2
3
4
5
0
1
2
3
4
5
Average Forward Current - IF(AV)(A)
Average Forward Current - IF(AV) (A)
Fig. 4-Max. Allowable LeadTemperature
Vs. Average Forward Current
Fig. 5-Forward Power Loss
Characteristics
1000
At Any Rated Load Condition
And With Rated V
Following Surge
Applied
RRM
100
10
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig.6-Max. Non-Repetitive Surge Current
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
4
www.irf.com
31DQ09, 31DQ10
Bulletin PD-2.306 rev. G 12/03
Ordering Information Table
Device Code
31
D
Q
10 TR
2
4
5
1
3
1
2
3
4
5
-
-
-
-
-
31 = 3.3A (Axial and small packages - Current is x10)
D
Q
=
=
DO-41 package
Schottky Q.. Series
10 = 100V
09 = 90V
10 = Voltage Ratings
TR= Tape & Reel package (1200 pcs)
-
= Box package (500 pcs)
31DQ10
********************************************
* SPICE Model Diode
*
********************************************
.SUBCKT 31DQ10 ANO CAT
D1 ANO 1 CAT
*Define diode model
.MODEL DMOD D(Is=56.46E-06 N=2.202 Rs=28.27E-03 Ikf=0.5957 Xti=2 Eg=1.11
+
+
Cjo=199.3E-12 M=0.4572 Vj=1.873 Fc=0.5 Isr=165.6E-24 Nr=4.955
Bv=119.9 Ibv=215.5E-06 Tt=21.64E-09)
********************************************
.ENDS 31DQ10
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/03
www.irf.com
5
相关型号：
31DQ15-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
31DQ15-GT3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
31DQ20
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, PLASTIC PACKAGE-2
SENSITRON
31DQ20-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
31DQ20-GT3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
©2020 ICPDF网 联系我们和版权申明