30BQ100GTRPBF [INFINEON]
SCHOTTKY RECTIFIER; 肖特基整流器器
| 型号： | 30BQ100GTRPBF |
| 厂家： | 
Infineon |
| 描述： | SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Final PD-20805 rev. A 01/07
30BQ100G
SCHOTTKY RECTIFIER
3 Amp
IF(AV) = 3.0Amp
VR = 100V
Description/ Features
Major Ratings and Characteristics
The 30BQ100G surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Characteristics
Values Units
I
Rectangular
waveform
3.0
A
F(AV)
V
I
100
V
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
RRM
@t =5μs sine
800
0.62
A
V
p
FSM
Guard ring for enhanced ruggedness and long term
reliability
V
@3.0Apk,T =125°C
J
F
T
range
- 55 to175
°C
J
Case Styles
SMC
1
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30BQ100G
Bulletin PD-20805 rev. A 01/07
Voltage Ratings
Part number
30BQ100G
VR
Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
30BQ Units Conditions
IF(AV) Max.Average Forward Current
3.0
4.0
A
50%duty cycle@TL =148°C,rectangular waveform
50%duty cycle@TL =138°C,rectangular waveform
Following any rated
load condition and
with rated VRRM applied
IFSM Max.PeakOneCycleNon-Repetitive
800
A
5μs Sineor3μsRect.pulse
SurgeCurrent
70
3.0
0.5
10msSineor6msRect. pulse
EAS NonRepetitiveAvalancheEnergy
mJ TJ=25°C,IAS=1.0A,18 μssquarepulse
IAR
Repetitive Avalanche Current
A
Current decayinglinearlytozeroin1μsec
Frequencylimited byTJ max.Va=1.5xVr typical
Electrical Specifications
Parameters
30BQ Units Conditions
TJ = 25 °C
VFM Max. Forward Voltage Drop
(1)
0.79
0.90
0.62
0.70
V
V
V
V
@ 3A
@ 6A
@ 3A
@ 6A
TJ = 125 °C
VR = rated VR
IRM
Max.ReverseLeakageCurrent(1)
0.1
5.0
mA TJ = 25 °C
mA TJ = 125 °C
CT
LS
Max. Junction Capacitance
Typical Series Inductance
115
3.0
pF
VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
nH
dv/dt Max. Voltage Rate of Change
10000
V/μs (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
30BQ Units
Conditions
TJ
Max.JunctionTemperatureRange (*) -55 to175 °C
Tstg Max.StorageTemperature Range
-55 to175 °C
RthJL Max. Thermal Resistance
Junction to Lead
12
°C/W DCoperation
(**)
RthJA Max.Thermal Resistance
Junction to Ambient
46
°C/W DCoperation
wt
Approximate Weight
Case Style
0.24(0.008) g (oz.)
SMC
Similar toDO-214AB
Device Marking
IR3JG
(*) dPtot
dTj
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j-a)
(**) Mounted 1 inch square PCB
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2
30BQ100G
Bulletin PD-20805 rev. A 01/07
10
1
10
T
= 175˚C
J
150˚C
125˚C
0.1
100˚C
75˚C
50˚C
0.01
0.001
0.0001
0
25˚C
0
20
40
60
80
100
ReverseVoltage-VR (V)
1
T
T
T
= 175˚C
= 125˚C
J
J
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
1000
100
10
=
25˚C
T
= 25˚C
J
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
20
40
60
Forward Voltage Drop-VFM(V)
ReverseVoltage-VR (V)
Fig.1-Max. Forward Voltage Drop Characteristics
(PerLeg)
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage (PerLeg)
100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
1
P
DM
t
1
t
2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
0.1
0.00001
0.0001
0.001
t1,RectangularPulseDuration(Seconds)
Fig.4-Max. Thermal Impedance Z thJC Characteristics (PerLeg)
0.01
0.1
1
10
100
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3
30BQ100G
Bulletin PD-20805 rev. A 01/07
2.5
2
180
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
1.5
1
RMS Limit
140
DC
Square wave (D = 0.50)
80% Rated Vr applied
120
0.5
0
see note (2)
100
0
1
2
3
4
5
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current-I F(AV) (A)
Average Forward Current- I F(AV) (A)
Fig.5-Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig.4-Maximum Average Forward Current
Vs. Allowable Lead Temperature
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
SquareWavePulseDuration-Tp (Microsec)
Fig.6-Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formulaused:TC =TJ -(Pd+PdREV)xRthJC
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) (seeFig.6);
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
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4
30BQ100G
Bulletin PD-20805 rev. A 01/07
Outline Table
DeviceMarking:IR3J
2.75 (.108)
3.15 (.124)
5.59 (.220)
6.22 (.245)
CATHODE
ANODE
6.60 (.260)
7.11 (.280)
1
2
.152 (.006)
.305 (.012)
2
POLARITY
PART NUMBER
1
2.00 (.079)
2.62 (.103)
.102 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060)
7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier,indicated by theletters"IR",andthePartNumber(indicatesthecurrent,thevoltage ratingandSchottky
Generation). Thesecondrowindicatestheyear, theweekofmanufacturingandtheSiteID.
IR3JG
SCHOTTKY GENERATION
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of th YEAR "standard product"
"P" = "Lead-Free"
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5
30BQ100G
Bulletin PD-20805 rev. A 01/07
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
30
B
Q
100
G
TR
-
6
7
1
2
4
5
3
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating (30 = 30A)
B
= Single Lead Diode
= Schottky Q Series
Q
Voltage Rating (100 = 100V)
G = Schottky Generation
y none = Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
y none = Standard Production
y PbF = Lead-Free
7
-
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 01/07
www.irf.com
6
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