30BF80 [INFINEON]
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE; 表面贴装超快恢复二极管
| 型号： | 30BF80 |
| 厂家： | 
Infineon |
| 描述： | SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-20713 07/99
30BF.. Series
SURFACE MOUNTABLE
ULTRAFAST RECOVERY DIODE
SMC(DO-214AB)
Features
Major Ratings and Characteristics
Characteristics
30BF..
Units
For surface mounted applications
Low profile package
10 to 20
40
60 to 80
I
3
100 to 800
100
A
V
F(AV)
Built in stress releaf
Compatible with all pick & palce equipments
Ultrafast recovery times for high efficiency
V
RRM
I
A
FSM
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
V
@3A,T =25°C
1.0
50
1.4
1.7
V
F
J
Glass passivated junction
trr @T =25°C
50
100
ns
°C
J
High temperature soldering:
260°C\10 seconds at terminals
T
range
-50to150
J
.108 (2.75)
.124 (3.15)
.220 (5.59)
.245 (6.22)
.260 (6.60)
.280 (7.11)
.006 (.152)
.012 (.305)
.079 (2.00)
.103 (2.62)
.004 (.103)
.008 (.203)
.030 (0.76)
.060 (1.52)
.305 (7.75)
.320 (8.13)
Dimensions in inches and (millimeters)
1
30BF.. Series
PD-20713 07/99
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VDC, maximum
blocking voltage
V
IRRM
100°C
µA
Part Number
30BF10
30BF20
30BF40
30BF60
30BF80
100
200
400
600
800
100
200
400
600
800
500
Maximum Ratings and Electrical Characteristics
Parameters
30BF..
40 60 to80
Units Conditions
10 to20
IF(AV) Maximum AverageForwardCurrent
IFSM PeakForwardSurgeCurrent
3
A
A
@ TL =75°C
100
8.3mssinglehalfsinewavesuperimposed
onratedload(JEDECMethod)TA=55°C
@ 3A
VFM Max.InstantaneousForwardVoltage
IRM MaximumDCReverseCurrent
atRatedDCBlockingVoltage
1.0
1.4
10
1.7
V
µA TA=25°C
500
50
TA=100°C
trr
ReverseRecoveryTime
50
75
100
50
ns IF = 0.5A, IR = 1.0A, Irr = 0.25A
CJ TypicalJunctionCapacitance
75
pf
@1.0MHzappliedreversevoltageof4.0V
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load.
For capacitive load, derate current by 20%.
Mechanical Specifications
Parameters
30BF..
15
Units Conditions
°C/W 8.0mm2(.013mmthick)landareas
RthJ MaximumThermalResistance
TJ OperatingTemperatureRange
Tstg StorageTemperatureRange
wt ApproximateWeight
CaseStyle
-50to150
-50to150
°C
°C
0.21(0.007)
g(oz)
DO-214AB
JEDEC moldedplastic
2
30BF.. Series
PD-20713 07/99
100
10
1
150
140
130
120
110
100
90
30BF.. Se rie s
T = 150°C
J
T = 100°C
J
T = 25°C
J
80
70
60
30BF.. Se rie s
80 100 120 140
50
0.1
0
20
40
60
0
0.5
1
1.5
2
2.5
3
3.5
Pe rc e n t o f Pe a k Re ve rse Vo lta g e (V)
Ave ra g e Fo rwa rd C urre nt (A)
Fig.1-MaximumAverageForwardCurrentRating
Fig.2-TypicalReverseCharacteristics
100
100
30BF10/20
30BF.. Se rie s
30BF40
10
30BF60/ 80
1
0.1
T = 25°C
J
Pulse Wid th = 300µs
2% Duty Cic le
8.3m s Sin g le Ha lf Sine Wa ve
Je d e c Me tho d
0.01
10
0.4
0.6 0.8
1
1.2
1.4 1.6
1.8
1
10
100
In sta nta ne o us Fo rwa rd Volta g e (V)
Num b e r o f C yc le s a t 60 Hz
Fig.3-TypicalForwardCharacteristics
Fig.4-Max.Non-RepetitiveForwardSurgeCharacteristic
160
140
120
100
80
T = 25°C
f = 1MHz
Vsig = 50mVp -p
J
trr
S
S
10
50
+0.5A
NON
INDUCTIVE
NON
INDUCTIVE
30BF10/ 20
0
D.U.T.
(-)
-0.25 A
(+)
PU LSE
GENERATOR
NOTE 2
25V d c
(approx)
60
30BF40/ 60/80
(-)
S
1
OSCILLOSCOPE
NOTE 1
NON
INDUCTIVE
(+)
-1 A
40
1cm
SET TIME
BASE FOR
10nsec/cm
20
0.1
1
10
Re ve rse Volta g e (V)
Fig.5-TypicalJunctionCapacitance
100
1000
ReverseRecoveryTimeCharacteristic
and Test Circuit Diagram
3
30BF.. Series
PD-20713 07/99
Ordering Information Table
Device Code
30
B
F
80
2
4
1
3
1
2
3
4
-
-
-
-
Current Rating x 10: 30 = 3A
B = DO-214AB (SMC) Surface Mount
F = Ultrafast Recovery
Voltage code: Code = VRRM / 10
Tape & Reel Information
Dimensionsinmillimetersand(inches)
4
相关型号：
30BQ015
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 15V V(RRM), Silicon, SMC, 2 PIN
SENSITRON
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