关闭背景特效

2N7614M1 [INFINEON]

Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14;

2N7614M1


元器件型号：	2N7614M1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 0.8A I(D), 250V, 1.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14 开关脉冲光电二极管晶体管
PDF文件：	总9页 (文件大小：202K)
下载文档：	下载PDF数据表文档文件
型号参数：2N7614M1参数

2N7617UC

Small Signal Field-Effect Transistor, 0.89A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-6

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0 INFINEON

2N7618M1

Small Signal Field-Effect Transistor, 1.07A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

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0 INFINEON

2N7618M1

Small Signal Field-Effect Transistor, 1.07A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

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0 IRF

2N7622U2

RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)

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23 IRF

2N7624U3

Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

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0 INFINEON

2N7624U3

Power Field-Effect Transistor, 22A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

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0 IRF

2N7625T3

Power Field-Effect Transistor, 20A I(D), 60V, 0.074ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC, LOW OHMIC TO-257AA, 3 PIN

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0 IRF

2N7627UC

Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-6

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0 INFINEON

2N7628M1

Small Signal Field-Effect Transistor, 0.71A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC PACKAGE-14

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0 IRF

2N7630M2

Small Signal Field-Effect Transistor, 0.56A I(D), 60V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, FLAT PACK-14

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0 INFINEON

2N7632UC

RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET

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30 IRF

2N7635M1

Transistor,

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0 INFINEON

2N7635M1

Transistor,

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0 IRF

2N764

THYRISTOR|GTO|30V V(DRM)|TO-18

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22 ETC

2N765

THYRISTOR|GTO|60V V(DRM)|TO-18

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33 ETC

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